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    RF powered plasma enhanced chemical vapour deposition reactor and methods of effecting plasma enhanced chemical vapour deposition
    1.
    发明公开
    RF powered plasma enhanced chemical vapour deposition reactor and methods of effecting plasma enhanced chemical vapour deposition 审中-公开
    反应器为射频供电等离子体活化化学气相沉积和用于执行所述的沉积方法

    公开(公告)号：EP1764822A2

    公开(公告)日：2007-03-21

    申请号：EP06023795.5

    申请日：1999-02-16

    申请人： MICRON TECHNOLOGY, INC. ,  Applied Materials, Inc.

    发明人： Sharan, Sujit ,  Sandhu, Gurtej S. ,  Smith, Paul ,  Chang, Mei

    IPC分类号： H01J37/32 ,  C23C16/505

    CPC分类号： H01J37/32174 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/321 ,  Y10S438/961

    摘要： A reactor comprises a chamber (31) defining a processing volume. A first electrode (32) is disposed inside the chamber and a second electrode (34) outside the chamber. A transformer has an input side and an output side, the input side being connected to and receiving power generated by, an RF power generator. The output side has at least one output terminal connected to the first electrode (32) and at least one other output terminal connected to the second electrode (34). The output side provides power to each of the first and second electrodes in accordance with a selected power ratio.

    摘要翻译： 的反应器包括限定处理空间的腔室（31）。 的第一电极（32）的腔室和所述腔室外侧的第二电极（34）的内部设置。 一种变压器，具有输入侧和输出侧，输入侧被连接到在由RF功率发生器生成和接收电力。 输出侧具有连接到所述第一电极（32）的至少一个输出端，并且连接到所述第二电极（34）的至少一个其它输出端子。 输出侧提供电源到每一个雅舞蹈的第一和第二电极与所选择的功率比。

    Apparatus and method for hybrid chemical deposition processes
    3.
    发明公开
    Apparatus and method for hybrid chemical deposition processes 审中-公开
    装置和方法用于混合化学沉积法

    公开(公告)号：EP1420080A3

    公开(公告)日：2005-11-09

    申请号：EP03257169.7

    申请日：2003-11-13

    申请人： APPLIED MATERIALS, INC.

    发明人： Chen, Ling ,  Ku, Vincent ,  Chang, Mei ,  Wu, Dien-Yeh ,  Chung, Hua

    IPC分类号： C23C16/455 ,  C23C16/30 ,  C23C16/54

    CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54

    摘要： A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body (102) and a gas distribution assembly (130) disposed on the chamber body. The method comprises positioning a substrate surface (110) to be processed within the chamber body, delivering two or more compounds into the chamber body utilizing the gas distribution assembly on the chamber body to deposit a film comprising a first material, and then delivering two or more compounds into the chamber body utilizing the gas distribution assembly disposed on the chamber body to deposit a film comprising a second material. The gas distribution assembly includes a gas conduit in fluid communication with the chamber body, two or more isolated gas inlets equipped with one or more high speed actuating valves (140A, 140B) in fluid communication with the gas conduit, and a mixing channel in fluid communication with the gas conduit. The valves are adapted to alternately pulse one or more compounds into the gas conduit, and the mixing channel is adapted to deliver a continuous flow of one or more compounds into the gas conduit.

    Plasma treatment of a titanium nitride film formed by chemical vapor deposition
    4.
    发明公开
    Plasma treatment of a titanium nitride film formed by chemical vapor deposition 审中-公开
    Pl t t t t t t t t t t t t t t t t

    公开(公告)号：EP1122774A1

    公开(公告)日：2001-08-08

    申请号：EP01300927.9

    申请日：2001-02-01

    申请人： Applied Materials, Inc.

    发明人： Wang, Shulin ,  Xi, Ming ,  Lando, Zvi ,  Chang, Mei

    IPC分类号： H01L21/768 ,  H01L21/02

    CPC分类号： H01L21/76862 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  H01L28/75

    摘要： A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapour deposition reaction between ammonia (NH 3 ) and titanium tetrachloride (TiCl 4 ), a titanium nitride film (204,304,306) is formed at a temperature of less than about 600°C, and an NH 3 :TiCl 4 ration greater than about 5. The deposited TiN film is then treated in a hydrogen-containing plasma (210,310) such as that generated from molecular hydrogen (H 2 ). This results in a thick titanium nitride film with low resistivity and good step coverage. The deposition and plasma treatment steps may be repeated for additional cycles to form a thick, composite titanium nitride film of desired thickness, which is suitable for use in plug fill or capacitor structure applications.

    摘要翻译： 一种形成具有低电阻率的厚氮化钛薄膜的方法。 使用氨（NH 3）和四氯化钛（TiCl 4）之间的热化学气相沉积反应，在小于约600℃的温度和大于约5的NH 3 :TiCl 4比例下形成氮化钛膜（204,304,306）。 然后将沉积的TiN膜在含氢等离子体（210,310）中进行处理，例如从分子氢（H 2）产生的。 这导致具有低电阻率和良好的阶梯覆盖的厚的氮化钛膜。 沉积和等离子体处理步骤可以重复进行另外的循环，以形成适合用于插塞填充或电容器结构应用的所需厚度的厚复合氮化钛膜。

    Components peripheral to the pedestal in the gas flow path within a chemical vapor deposition chamber
    7.
    发明公开
    Components peripheral to the pedestal in the gas flow path within a chemical vapor deposition chamber 失效
    的腔室中的部件的外围，以通过气流的方式基部用于化学气相沉积

    公开(公告)号：EP0818558A1

    公开(公告)日：1998-01-14

    申请号：EP97305148.5

    申请日：1997-07-11

    申请人： Applied Materials, Inc.

    发明人： Zhao, Jun ,  Sinha, Ashok ,  Tepman, Avi ,  Chang, Mei ,  Luo, Lee ,  Schrieber, Alex ,  Sajoto, Talex ,  Wolff, Stefan ,  Dornfest, Charles ,  Danek, Michael

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32834 ,  H01J2237/2001

    摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The arrangement reduces thermal deposition of the conductive material on peripheral portions of the pedestal (140) supporting a wafer (142) and in a pumping channel (160) exhausting the chamber. A peripheral ring (146) placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements (166, 167, 170, 172) some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

    摘要翻译： 的处理室的基板，特别是化学气相沉积（CVD）腔室既用于导电性材料的热沉积和随后进行等离子处理。 该布置减少了支撑晶片（142）的基座（140）的周缘部的导电材料的热沉积和在排出腔室中的泵送通道（160）。 放置在基座上的外周环（146），所以优选使用居中晶片，是热从基座分离所以没有它的温度保持比晶片的低得多。 尽管它的热隔离，外围环电连接到所述基座，以防止电弧放电。 抽气通道衬有各种元件（166，167，170，172）其中一些是电浮置的，并且被设计成没有沉积在这些元素的导电材料不有害地影响用于处理晶片产生等离子体。

    Plasma reactors for processing work pieces
    8.
    发明公开
    Plasma reactors for processing work pieces 失效
    Plasmareaktoren zur Behandlung vonWerkstücken

    公开(公告)号：EP0779645A2

    公开(公告)日：1997-06-18

    申请号：EP96309031.1

    申请日：1996-12-11

    申请人： APPLIED MATERIALS, INC.

    发明人： Mohn, Jon ,  Collins, Kenneth S. ,  Chang, Mei ,  Hung, Raymond

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32449 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3222 ,  H01J37/32467 ,  Y10S156/914

    摘要： The disclosure relates to a plasma reactor for processing a workpiece, including a reactor enclosure (100) defining a processing chamber, a semiconductor ceiling (105), a base (120) within the chamber for supporting the workpiece (125) during processing thereof, the semiconductor ceiling including a gas inlet system (909, 910, 920, 930, 940 and 950) for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus (150, 155) for coupling plasma source power into the chamber.

    摘要翻译： 本公开涉及一种用于处理工件的等离子体反应器，包括限定处理室的反应器壳体（100），半导体顶板（105），在室内的基座（120），用于在其处理期间支撑工件（125） 所述半导体天花板包括用于通过天花板将等离子体前体气体进入室的气体入口系统（909,910,909,930,940和950）以及用于将等离子体源功率耦合到所述室中的装置（150,155）。