利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

30 条记录 (耗时 0.014 秒)

    MOCVD of lead zirconate titanate films
    1.
    发明公开
    MOCVD of lead zirconate titanate films 审中-公开
    OMCVD zum Niederschlagen von Blei-Zirkonate-Titanate Schichten

    公开(公告)号：EP1113089A1

    公开(公告)日：2001-07-04

    申请号：EP00311759.5

    申请日：2000-12-29

    申请人： Applied Materials, Inc.

    发明人： Wade, Christopher ,  Sivaramakrishnan, Visweswaren ,  Singh, Kaushal K. ,  Abooameri, Farid ,  Mirkarimi, Laura ,  Amano, Jun ,  Zhao, Jun ,  Marston, Doug ,  Lim, Vicente

    IPC分类号： C23C16/40 ,  C23C16/448

    CPC分类号： C23C16/45561 ,  C23C16/409 ,  C23C16/4481

    摘要： Method and apparatus for metalorganic chemical vapor deposition of a lead zirconate titanate (PZT) film on a substrate is provided. The method for forming a PZT film comprises vaporizing and introducing vaporized lead bis (tetramethyl heptanedionate), zirconium bis (tetramethyl heptanedionate) bis (isopropoxy) and titanium bis (tetramethyl heptanedionate) bis (isopropoxy) into a chamber. The apparatus comprises a CVD chamber (20) having a gas distribution system (22) and a substrate support (24), one or more vaporizers (30a,c) fluidly connected to the gas distribution system of the CVD chamber, an oxygen gas source (31a,31b) fluidly connected to the gas distribution system of the CVD chamber; and one or more precursor sources (32) fluidly connected to the one or more vaporizers, the one or more precursor sources comprising Pb(thd) 2 , Zr(OiPr) 2 (thd) 2 and Ti(OiPr) 2 (thd) 2 .

    摘要翻译： 提供了一种用于在基材上进行锆钛酸铅（PZT）薄膜的金属有机化学气相沉积的方法和装置。 形成PZT膜的方法包括将蒸发的双（四氢呋喃酮酮酸）双酯，双（四氢呋喃酮）双（异丙氧基）锆和双（四甲基庚二酮）二（异丙氧基）钛蒸发并引入室中。 该装置包括具有气体分配系统（22）和衬底支撑件（24）的CVD室（20），与CVD室的气体分配系统流体连接的一个或多个蒸发器（30a，c），氧气源 （31a，31b）流体连接到CVD室的气体分配系统; 一个或多个前体源（32）流体连接到一个或多个蒸发器，所述一个或多个前体源包括Pb（thd）2，Zr（OiPr）2（thd）2和Ti（OiPr）2（thd）2 。

    Components peripheral to the pedestal in the gas flow path within a chemical vapor deposition chamber
    2.
    发明公开
    Components peripheral to the pedestal in the gas flow path within a chemical vapor deposition chamber 失效
    的腔室中的部件的外围，以通过气流的方式基部用于化学气相沉积

    公开(公告)号：EP0818558A1

    公开(公告)日：1998-01-14

    申请号：EP97305148.5

    申请日：1997-07-11

    申请人： Applied Materials, Inc.

    发明人： Zhao, Jun ,  Sinha, Ashok ,  Tepman, Avi ,  Chang, Mei ,  Luo, Lee ,  Schrieber, Alex ,  Sajoto, Talex ,  Wolff, Stefan ,  Dornfest, Charles ,  Danek, Michael

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32834 ,  H01J2237/2001

    摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The arrangement reduces thermal deposition of the conductive material on peripheral portions of the pedestal (140) supporting a wafer (142) and in a pumping channel (160) exhausting the chamber. A peripheral ring (146) placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements (166, 167, 170, 172) some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

    摘要翻译： 的处理室的基板，特别是化学气相沉积（CVD）腔室既用于导电性材料的热沉积和随后进行等离子处理。 该布置减少了支撑晶片（142）的基座（140）的周缘部的导电材料的热沉积和在排出腔室中的泵送通道（160）。 放置在基座上的外周环（146），所以优选使用居中晶片，是热从基座分离所以没有它的温度保持比晶片的低得多。 尽管它的热隔离，外围环电连接到所述基座，以防止电弧放电。 抽气通道衬有各种元件（166，167，170，172）其中一些是电浮置的，并且被设计成没有沉积在这些元素的导电材料不有害地影响用于处理晶片产生等离子体。

    Plasma reactors for processing semiconductor wafers
    3.
    发明公开
    Plasma reactors for processing semiconductor wafers 失效
    Plasmareaktoren zur Behandlung von Halbleiterscheiben

    公开(公告)号：EP0715334A2

    公开(公告)日：1996-06-05

    申请号：EP95307269.1

    申请日：1995-10-13

    申请人： APPLIED MATERIALS, INC.

    发明人： Zhao, Jun ,  Smyth, Kenneth ,  McNutt, Gerald ,  Wolff, Stefan ,  Taylor, William Nixon, Jr.

    IPC分类号： H01J37/32 ,  H05H1/46

    CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/3299 ,  H05H1/46

    摘要： The disclosure relates to a plasma chamber RF excitation system including a high frequency RF power source (12a) having a fixed RF match circuit (30) at its output and sensing and control apparatus (32) for sensing the amount of RF power delivered by the RF power source and for regulating the output power level of the RF power source so as to maintain the RF power delivered by the RF power source at a desired level, and an RF plasma chamber including an RF radiator. The power source is mounted proximate or directly on the plasma chamber (10) so that the distance between them is much less than an eighth of a wavelength at the frequency of the RF source. The system may further include an endpoint detector (12c) for a plasma etch process or a chamber cleaning process which halts the process when the VSWR or reflected power ceases to change in response to the progress of the etch process.

    摘要翻译： 本发明涉及一种包括在其输出端具有固定RF匹配电路（30）的高频RF电源（12a）的等离子体室RF激励系统，以及用于感测由 RF电源并且用于调节RF电源的输出功率电平，以便将由RF电源提供的RF功率保持在期望的电平，以及包括RF辐射器的RF等离子体室。 电源靠近或直接安装在等离子体室（10）上，使得它们之间的距离远小于在RF源的频率处的波长的八分之一。 该系统还可以包括用于等离子体蚀刻工艺的端点检测器（12c）或者当VSWR或反射功率响应于蚀刻工艺的进行而停止改变时停止该工艺的室清洁过程。

    Chemical vapor deposition of ruthemium films
    5.
    发明公开
    Chemical vapor deposition of ruthemium films 审中-公开
    Chemische Dampfabscheidung von Ruthenium-Filmen

    公开(公告)号：EP1178131A1

    公开(公告)日：2002-02-06

    申请号：EP01306678.2

    申请日：2001-08-03

    申请人： Applied Materials, Inc.

    发明人： Wade, Christopher P. ,  Pao, Elaine ,  Wang, Yaxin ,  Zhao, Jun

    IPC分类号： C23C16/18

    CPC分类号： C23C16/18

    摘要： The present invention provides a method of depositing ruthenium films on a substrate via liquid source chemical vapor deposition wherein the source material is liquid at room temperature and utilizing process conditions such that deposition of the ruthenium films occurs at a temperature in the kinetic-limited temperature regime. Also provided is a method of depositing a thin ruthenium film on a substrate by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl) ruthenium by vaporizing the bis-(ethylcyclopentadienyl) ruthenium at a vaporization temperature of about 100-300 °C to form a CVD source material gas, providing an oxygen source reactant gas and forming a thin ruthenium film on a substrate in a reaction chamber using the CVD source material gas and the oxygen source reactant gas at a substrate temperature of about 100-500 °C.

    摘要翻译： 本发明提供了一种通过液体源化学气相沉积在基板上沉积钌膜的方法，其中源材料在室温下为液体并且利用工艺条件使得钌膜的沉积在动态限制温度区域的温度下发生 。 还提供了一种通过使用双 - （乙基环戊二烯基）钌的液体源化学气相沉积在基板上沉积薄钌膜的方法，其通过在约100-300℃的汽化温度下蒸发双 - （乙基环戊二烯基）钌以形成 CVD源材料气体，在基板温度为约100-500℃下，使用CVD源材料气体和氧源反应物气体，在反应室中的基板上形成氧源反应气体并形成薄的钌膜。 >

    Process and apparatus for depositing titanium layers
    6.
    发明公开
    Process and apparatus for depositing titanium layers 失效
    Verfahren und Vorrichtung zur Abscheidung von Titanschichten

    公开(公告)号：EP0855452A1

    公开(公告)日：1998-07-29

    申请号：EP98300508.3

    申请日：1998-01-26

    申请人： APPLIED MATERIALS, INC.

    发明人： Zhao, Jun ,  Luo, Lee ,  Liang, Xiao Jin ,  Wang, Jia-Xiang ,  Wolff, Stefan ,  Sajoto, Talex

    IPC分类号： C23C16/44 ,  C23C16/52

    CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32082 ,  H01J2237/2001 ,  H01J2237/3321

    摘要： The disclosure relates to methods and apparatus for depositing titanium films in a CVD system (10) using a heater heated to at least about 400°C at a pressure of about 1-10 torr in the reactor chamber (30), introducing a reactant gas and source gas at a reactant source gas flow ratio of less than about 250:1, and applying RF energy from a supply (5) to form a plasma. The present invention provides deposition rates up to 200 Å/minute on semiconductor substrates (36) from a titanium tetrachloride source, according to specific embodiments.

    摘要翻译： 本公开涉及在CVD系统（10）中使用在反应器室（30）中以约1-10托的压力加热至至少约400℃的加热器沉积钛膜的方法和装置，引入反应气体 和反应物源气体流量比小于约250:1的源气体，以及从电源（5）施加RF能量以形成等离子体。 根据具体实施方案，本发明在四氯化钛源的半导体衬底（36）上提供高达200安培斯/分钟的沉积速率。

    Vaporization sequence for multiple liquid precursors
    7.
    发明公开
    Vaporization sequence for multiple liquid precursors 失效
    VerdampfungssequenzfürmultipleflüssigeAusgangsstoffe

    公开(公告)号：EP0692553A1

    公开(公告)日：1996-01-17

    申请号：EP95110239.1

    申请日：1995-06-30

    申请人： APPLIED MATERIALS, INC.

    发明人： Sivaramakrishnan, Visweswaren ,  Nishizato, Hiroshi ,  Zhao, Jun ,  Yokoyama, Ichiro

    IPC分类号： C23C16/40 ,  C23C16/44 ,  H01L21/00

    CPC分类号： C23C16/401 ,  C23C16/448 ,  Y10S438/935 ,  Y10T117/1008

    摘要： A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources (50, 60, 70) wherein the liquid precursor source (50) with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold (30) connected to a processing chamber, with the point (32) of introduction being spaced away from the processing chamber (10). A second liquid precursor source (60), having a vapor pressure lower than the first liquid precursor source (50), is then introduced in vaporized form into the manifold (30) at a point (34) closer to the processing chamber (10). This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold (30) at a point closer to the processing chamber (10) than the previous liquid precursor source. A temperature gradient may then be maintained along the manifold (30) with the temperature gradually increased in a direction toward the processing chamber (10) while still mitigating premature boiling of the liquid precursor sources (50, 60, 70) prior to vaporization, or condensation of already vaporized liquid precursor sources or components.

    摘要翻译： 描述了一种用于使用一个或多个液体前体源（50,60,70）处理半导体衬底上的薄膜的方法和装置，其中蒸发压最高的液体前体源（50）首先蒸发，然后作为 蒸汽进入连接到处理室的公共歧管（30），引入点（32）与处理室（10）间隔开。 然后，具有低于第一液体前体源（50）的蒸气压的第二液体前体源（60）在更靠近处理室（10）的点（34）处以蒸发形式引入歧管（30） 。 对于每个液体前体源重复这一操作，其中每个随后的液体前体源具有下一个更低的蒸气压，以比先前的液体前体源更接近处理室（10）的点以蒸发形式引入歧管（30）。 然后可以沿着歧管（30）保持温度梯度，其中温度在朝向处理室（10）的方向上逐渐增加，同时仍然减轻液化前体源（50,60,70）在蒸发之前的过早沸腾，或 已蒸发的液体前体源或组分的冷凝。