公开(公告)号：EP0692815A3

公开(公告)日：1996-03-20

申请号：EP95304790.9

申请日：1995-07-10

申请人： APPLIED MATERIALS, INC.

发明人： Wong, Jerry ,  Toshima, Masatom M ,  Law, Kam S. ,  Maydn, Dan ,  Turner,Norman L.

IPC分类号： H01L21/00

CPC分类号： H01L21/68742 ,  H01L21/68778 ,  Y10S414/136 ,  Y10S414/139 ,  Y10S414/141

摘要： A chamber (10) for processing substrates (12) includes a support member (14) therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces (30) for receiving substrates thereon, and is rotatable by a drive member (16) through a coupling (34) about a horizontal axis to position the multiple planar faces in a horizontal position (Fig 2) to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position (Fig 3) for processing. A clamping and lifting apparatus (32) is provided on the support member. The clamping and lifting apparatus is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting assembly and the support member, and in a retracted position to clamp the substrate to the support member. A clamp actuator (200) is disposed on the chamber wall to move the clamping and lifting assembly (32) between the extended and retracted positions.

公开(公告)号：EP0726593A1

公开(公告)日：1996-08-14

申请号：EP96101305.9

申请日：1996-01-31

申请人： APPLIED MATERIALS INC.

发明人： Shang, Quanyuan ,  Law, Kam S. ,  Maydan, Dan

IPC分类号： H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32357

摘要： A plasma-based generator (10) for use with a power source including a plasma tube (12) having a hollow tube body in which a plasma is generated by the power source; a first support structure (30, 32) supporting a downstream end of the plasma tube (12); and a second support structure (60, 70) holding an upstream end of the plasma tube (12), the second support structure (60, 70) connected to the first support structure (30, 32), the second support structure (60, 70) including an expansion joint (70) which changes its length to accommodate a lengthening and a shortening of the plasma tube (12) due to its thermal expansion and contraction when plasma processing is performed within the plasma tube (12).

摘要翻译： 一种与电源一起使用的等离子体发生器（10），其包括具有中空管体的等离子体管（12），其中由电源产生等离子体; 支撑等离子体管（12）的下游端的第一支撑结构（30,32）; 以及保持等离子体管（12）的上游端的第二支撑结构（60,70），连接到第一支撑结构（30,32）的第二支撑结构（60,70），第二支撑结构（60， 70），其包括膨胀接头（70），所述膨胀接头（70）改变其长度以适应等离子体管（12）由于在等离子体管（12）内进行等离子体处理时由于其热膨胀和收缩而变长和缩短。

公开(公告)号：EP0692815A2

公开(公告)日：1996-01-17

申请号：EP95304790.9

申请日：1995-07-10

申请人： APPLIED MATERIALS, INC.

发明人： Wong, Jerry ,  Toshima, Masatom M ,  Law, Kam S. ,  Maydn, Dan ,  Turner,Norman L.

IPC分类号： H01L21/00

CPC分类号： H01L21/68742 ,  H01L21/68778 ,  Y10S414/136 ,  Y10S414/139 ,  Y10S414/141

摘要： A chamber (10) for processing substrates (12) includes a support member (14) therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces (30) for receiving substrates thereon, and is rotatable by a drive member (16) through a coupling (34) about a horizontal axis to position the multiple planar faces in a horizontal position (Fig 2) to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position (Fig 3) for processing. A clamping and lifting apparatus (32) is provided on the support member. The clamping and lifting apparatus is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting assembly and the support member, and in a retracted position to clamp the substrate to the support member. A clamp actuator (200) is disposed on the chamber wall to move the clamping and lifting assembly (32) between the extended and retracted positions.

摘要翻译： 一种用于处理衬底（12）室（10）包括支撑件（14）在其中的所有其从室的侧壁悬挂。 所述支撑构件包括用于容纳在其上的衬底中的多个平面的面（30），并且是通过一个绕水平轴耦合（34），可旋转的基座由一驱动件（16）定位在水平位置中的多个平面的面（图2），以 衬底放置在平的表面或用于加工除去从平坦面的基板，和第二位置以在非水平位置的基板放置（图3）。 的夹紧和提升装置（32）被设置在支撑构件上。 夹紧和提升装置可定位，相对于在伸展位置的支撑构件，以允许所述夹紧和提升组件和支撑构件之间被定位一个底物，并在缩回位置以夹持衬底到所述支撑构件 ， 甲夹具致动器（200）被布置在所述腔室壁至伸出位置和缩回位置之间移动的夹紧和提升组件（32）。 $$ $$

公开(公告)号：EP0608633B1

公开(公告)日：1999-03-03

申请号：EP93310555.3

申请日：1993-12-24

申请人： Applied Materials, Inc.

发明人： Law, Kam S. ,  Robertson, Robert ,  Lou, Pamela ,  Kollrack, Marc Michael ,  Lee, Angela ,  Maydan, Dan

IPC分类号： C23C16/44 ,  H01L21/84

CPC分类号： H01L21/67167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765

公开(公告)号：EP0697467A1

公开(公告)日：1996-02-21

申请号：EP95304784.2

申请日：1995-07-10

申请人： APPLIED MATERIALS, INC.

发明人： Shang, Quanyuan ,  Law, Kam S. ,  Maydan, Dan

IPC分类号： C23C16/44 ,  H01J37/32

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/517

摘要： A method for cleaning a deposition chamber (10) that is used in fabricating electronic devices including the steps of delivering a precursor gas into a remote chamber (46) that is outside the deposition chamber, activating the precursor gas in the remote chamber using a microwave generator (48) to form a reactive species, flowing the reactive species from the remote chamber into the deposition chamber via conduit (57), and using the reactive species that is flowed into the deposition chamber from the remote chamber to clean the inside of the deposition chamber.

摘要翻译： 一种用于清洁用于制造电子器件的沉积室（10）的方法，包括以下步骤：将前体气体输送到沉积室外的远程室（46）中，使用微波激活远程室中的前体气体 发生器（48）以形成反应性物质，通过导管（57）将反应物质从远程室流入沉积室，并使用从远程室流入沉积室的反应物质清洁 沉积室。 $$

公开(公告)号：EP0272140B1

公开(公告)日：1994-02-23

申请号：EP87311193.4

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Wang, David Nin-Kou ,  White, John M. ,  Law, Kam S. ,  Leung, Cissy ,  Umotoy, Salvador P. ,  Collins, Kenneth S. ,  Adamik, John A. ,  Perlov, Ilya ,  Maydan, Dan

IPC分类号： C23C16/54 ,  C23C16/50 ,  C23C16/40 ,  H01L21/316

CPC分类号： C23C16/45565 ,  C23C16/402 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/31604

公开(公告)号：EP0608633A3

公开(公告)日：1996-05-01

申请号：EP93310555.3

申请日：1993-12-24

申请人： APPLIED MATERIALS, INC.

发明人： Law, Kam S. ,  Robertson, Robert ,  Lou, Pamela ,  Kollrack, Marc Michael ,  Lee, Angela ,  Maydan, Dan

IPC分类号： C23C16/44 ,  H01L21/84

CPC分类号： H01L21/67167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765

摘要： Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber (120) under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370 o C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers (122, 124, 126) which are part of a single multichamber vacuum system (111).

公开(公告)号：EP0272140A3

公开(公告)日：1990-11-14

申请号：EP87311193.4

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Wang, David Nin-Kou ,  White, John M. ,  Law, Kam S. ,  Leung, Cissy ,  Umotoy, Salvador P. ,  Collins, Kenneth S. ,  Adamik, John A. ,  Perlov, Ilya ,  Maydan, Dan

IPC分类号： C23C16/54 ,  C23C16/50 ,  C23C16/40 ,  H01L21/316

CPC分类号： C23C16/45565 ,  C23C16/402 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/31604

摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor (10) is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor (16) and wafer fingers (20) which collectively remove the wafer (15) from a robot transfer blade (24) and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold (26) then return the wafer to the blade. A combined RF/gas feed-through device (36) protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold (26) is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust fases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressure including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone on in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

公开(公告)号：EP0608633A2

公开(公告)日：1994-08-03

申请号：EP93310555.3

申请日：1993-12-24

申请人： APPLIED MATERIALS, INC.

发明人： Law, Kam S. ,  Robertson, Robert ,  Lou, Pamela ,  Kollrack, Marc Michael ,  Lee, Angela ,  Maydan, Dan

IPC分类号： C23C16/44 ,  H01L21/84

CPC分类号： H01L21/67167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765

摘要： Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber (120) under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370 o C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers (122, 124, 126) which are part of a single multichamber vacuum system (111).

摘要翻译： 可以在相同的反应条件下，在相同的室（120）中以高沉积速率在薄膜晶体管上进行多层薄膜沉积到玻璃基板上以形成薄膜晶体管。 我们已经发现，通过使用至少0.5托的压力和约250-370℃的衬底温度的化学气相沉积，可以在相同的室中沉积顺序的氮化硅和非晶硅薄层。 随后沉积的不同薄膜也可以沉积在作为单个多室真空系统（111）的一部分的分离的化学气相沉积室（122,124,126）中。

公开(公告)号：EP0272140A2

公开(公告)日：1988-06-22

申请号：EP87311193.4

申请日：1987-12-18

申请人： APPLIED MATERIALS, INC.

发明人： Wang, David Nin-Kou ,  White, John M. ,  Law, Kam S. ,  Leung, Cissy ,  Umotoy, Salvador P. ,  Collins, Kenneth S. ,  Adamik, John A. ,  Perlov, Ilya ,  Maydan, Dan

IPC分类号： C23C16/54 ,  C23C16/50 ,  C23C16/40 ,  H01L21/316

CPC分类号： C23C16/45565 ,  C23C16/402 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/31604

摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor (10) is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor (16) and wafer fingers (20) which collectively remove the wafer (15) from a robot transfer blade (24) and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold (26) then return the wafer to the blade. A combined RF/gas feed-through device (36) protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold (26) is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust fases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressure including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone on in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

摘要翻译： 的高压，高吞吐量，单晶片，半导体处理反应器（10）是圆盘游离缺失所有其能够热CVD，等离子体增强CVD，等离子体辅助回蚀，等离子体自洁，和沉积地形修改的通过溅射，或者单独地或者 如原位多步骤处理的一部分。 该反应器包括叉指式基座（16）和晶片的手指（20），其共同地除去来自机器人的转印刮板（24）的晶片（15）和与所述晶片和之间可变，对照，靠近的平行间隔的晶片位置的配合阵列 室气体入口歧管（26），然后将晶片返回到刀片。 组合的RF /气体馈通装置（36）可防止工艺气体泄漏和施加RF能量至气体入口歧管没有内部故障或气体的沉积。 气体入口歧管（26）被用于angepasst在晶片提供均匀的气流。 温度控制的内部和外部的歧管表面抑制外部表面上的冷凝，过早反应和分解和沉积。 因此，反应器集成了一个均匀的径向泵送气体系统，其跨所述晶片和ausrichtet净化气流向下和向上朝向晶片的周缘使扫排气fases从晶片径向远离，以防止沉积在晶片外，并保持均匀的反应气体流 在室清洗。 将反应器在宽范围的压力包括非常高的压力提供均匀的处理。 用于形成二氧化硅的高度保形层的低温CVD方法因此游离缺失盘。 该方法使用非常高的腔室压力和低温，和TEOS和臭氧的反应物。 低温CVD二氧化硅沉积步骤是用于平坦化下层台阶的介电层是特别有用的，无论是单独一个结合随后的各向同性蚀刻。 用于形成平坦化二氧化硅层的用途在低温和高压其次（2）保形二氧化硅层的沉积，从而在高压和（1）高速率的二氧化硅沉积的优选的原位多步骤的过程 低温，通过（3）的高率各向同性蚀刻其次，优选在低温和高压在用于两个氧化物沉积步骤相同的反应器中。 的步骤的各种组合是游离缺失盘针对不同的应用，如一个优选的反应器的自清洁步骤。