公开(公告)号：EP2443650A1

公开(公告)日：2012-04-25

申请号：EP10725447.6

申请日：2010-06-15

Applicant: BASF SE

Inventor： FLEISCHHAKER, Friederike ,  DOMKE, Imme ,  KARPOV, Andrey ,  KASTLER, Marcel ,  WLOKA, Veronika ,  WEBER, Lothar

IPC: H01L21/02 ,  H01L21/368

CPC classification number: H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628

Abstract: The present invention relates to a method for producing a layer containing at least one semiconductive metal oxide on a substrate, comprising at least the following steps: (A) a porous layer comprising at least one semiconductive metal oxide is applied to a substrate, (B) the porous layer from step (A) is treated with a solution containing at least one precursor compound of the semiconductive metal oxide, so that the pores of the porous layer are at least partially filled with this solution, and (C) the layer obtained in step (B) is heat-treated in order to convert at least one precursor compound of the semiconductive metal oxide into the semiconductive metal oxide, wherein the at least one precursor compound of the at least one semiconductive metal oxide is selected in step (B) from the group comprising carboxylates of monocarboxylic acids, dicarboxylic acids or polycarboxylic acids with at least three carbon atoms or derivatives of monocarboxylic acids, dicarboxylic acids or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrides or azides of the relevant metal and mixtures thereof.

公开(公告)号：EP2425038A2

公开(公告)日：2012-03-07

申请号：EP10715825.5

申请日：2010-04-26

Applicant: BASF SE

Inventor： KARPOV, Andrey ,  FLEISCHHAKER, Friederike ,  DOMKE, Imme ,  KASTLER, Marcel ,  WLOKA, Veronika ,  WEBER, Lothar

IPC: C23C18/12 ,  H01L21/288

CPC classification number: C23C18/1216 ,  C23C18/1245 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: The present invention relates to a method for producing a layer containing at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) producing a solution containing at least one precursor compound of the at least one metal oxide selected from the group of carboxylates from monocarboxylic, dicarbonic, or polycarboxylic acids with at least three carbon atoms or derivatives of monocarboxylic, dicarbonic, or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidins, amidrazones, carbamide derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and compounds thereof, in at least one solvent; (B) application of the solvent of step (A) on the substrate; and (C) thermal treatment of the substrate of step (B) at a temperature of 20 to 200 degrees Celsius, in order to transfer the at least one precursor compound in at least one semiconductive metal oxide. In the event that in step (A), electrically neutral [(OH)
x (NH
3 )
y Zn]
z with x, y, and z independently from one another 0.01 to 10, is used as precursor compound, said precursor compound is obtained by conversion of zinc oxide or zinc hydroxide with ammonia; a substrate, which is coated with at least one semiconductive metal oxide, obtainable by said method; the application of said substrate in electronic components; and a method for producing electronically neutral [(OH)
x (NH
3 )
y Zn]
z with x, y, and z independently from one another 0.01 to 10, by conversion of zinc oxide and/or zinc hydroxide with ammonia.

公开(公告)号：EP2321373A1

公开(公告)日：2011-05-18

申请号：EP09782305.8

申请日：2009-08-28

Applicant: BASF SE

Inventor： DOMKE, Imme ,  KARPOV, Andrey ,  HIBST, Hartmut ,  PARASHKOV, Radoslav ,  HENNIG, Ingolf ,  KASTLER, Marcel ,  FLEISCHHAKER, Friederike ,  WEBER, Lothar ,  ECKERLE, Peter

IPC: C09C1/04 ,  C09C3/08 ,  H01L21/368 ,  H01L29/786

CPC classification number: B82Y30/00 ,  C01P2004/62 ,  C01P2004/64 ,  C09C1/043 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02601 ,  H01L21/02628 ,  H01L29/7869 ,  Y10T428/29 ,  Y10T428/2995

Abstract: The present invention relates to particles modified using a modifier, and a dispersing means comprising said modified particles. The surface-modified metal, metal halogenide, metal chalcogenide, metal nitride, metal phosphide, metal boride, or metal phosphate particles or mixtures thereof have an average particle diameter of 1 to 500 nm and the surface thereof was modified using one or more modifiers of the formula (I), (II), and (III).