ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:EP3872561A1

    公开(公告)日:2021-09-01

    申请号:EP19856413.0

    申请日:2019-08-27

    IPC分类号: G02F1/1343 G02F1/1362

    摘要: An array substrate includes a base substrate; a data line and a common electrode line on the base substrate; and a first gate line and a second gate line on the base substrate, both the first gate line and the second gate line cross both the data line and the common electrode line to define a sub-pixel. The sub-pixel includes: a pixel electrode; a common electrode; and an insulating layer between the pixel electrode and the common electrode. The common electrode includes a plurality of slits, and the slits extend in the same direction as the data line. The slits include a first slit close to the data line, the pixel electrode includes a first side surface close to the data line, and an orthographic projection of the first side surface on the base substrate is located within an orthographic projection of the first slit on the base substrate.

    SHIFT REGISTER AND METHOD AND DEVICE FOR DRIVING SAME

    公开(公告)号:EP3913609A1

    公开(公告)日:2021-11-24

    申请号:EP19836778.1

    申请日:2019-01-16

    IPC分类号: G09G3/20 G11C19/28

    摘要: A shift register, a driving method thereof and a device are provided. A shift register sub-circuit outputs a gate scanning signal, to dive gate lines. The shift register sub-circuit outputs a touch scanning signal to a touch control circuit, so that the touch control circuit conducts a touch electrode with a touch detection signal terminal in response to the touch scanning signal, and thus, touch driving may be performed. Therefore, the shift register provided by the embodiment of the disclosure is not only capable of realizing scanning driving, but also capable of realizing the touch driving of touch electrodes. In addition, the number of arranged touch detection lines may be reduced, and furthermore, the area of a Fan-out region and the area of a non-display region are reduced.

    ARRAY SUBSTRATE AND METHOD FOR PREPARING SAME, AND DISPLAY PANEL

    公开(公告)号:EP4312265A2

    公开(公告)日:2024-01-31

    申请号:EP23215698.4

    申请日:2019-12-18

    IPC分类号: H01L23/528

    摘要: Disclosed are an array substrate and a method for preparing same, and a display panel. The array substrate comprises: a base (10); a pixel electrode (50) and a thin-film transistor which are provided on the base (10); a passivation layer (16) covering the thin-film transistor and the pixel electrode (50), wherein an adapting via hole (K1, K2), which simultaneously exposes the pixel electrode (50) and a drain electrode (15) or a source electrode (14) of the thin-film transistor, is provided in the passivation layer (16); and a connection electrode (60) which is provided on the passivation layer (16) and is at the adapting via hole (K1, K2), wherein the connection electrode (60) is simultaneously connected, through the adapting via hole (K1, K2), to the pixel electrode (50) and the drain electrode (15) or the source electrode (14). Realizing connection between the drain electrode (15) or the source electrode (14) and the pixel electrode (50) by providing the adapting via hole (K1, K2) effectively reduces the number of via holes, increases an aperture ratio of the display panel, improves product quality, and improves the yield.

    DISPLAY SUBSTRATE, DISPLAY PANEL AND ELECTRONIC DEVICE

    公开(公告)号:EP4067988A1

    公开(公告)日:2022-10-05

    申请号:EP20873342.8

    申请日:2020-09-23

    IPC分类号: G02F1/1368 G02F1/1343

    摘要: A display substrate is provided, including: a base substrate (10); a display area (20) and a peripheral area (30) surrounding the display area (20) on the base substrate, where a dummy pixel unit (31) and a dummy data line (32) are located in the peripheral area (30), the dummy pixel unit (31) includes a thin film transistor (40) including a first electrode (41) and a second electrode (42), the first electrode (41) is one of a source electrode and a drain electrode and is electrically connected to the dummy data line (32), and the second electrode (42) is another of the source electrode and the drain electrode and includes a first portion (421) and a second portion (422) separated by a first opening (43). A display panel including the display substrate and an electronic device including the display substrate or the display panel are further provided.

    ARRAY SUBSTRATE AND METHOD FOR PREPARING SAME, AND DISPLAY PANEL

    公开(公告)号:EP4312265A3

    公开(公告)日:2024-04-17

    申请号:EP23215698.4

    申请日:2019-12-18

    摘要: Disclosed are an array substrate and a method for preparing same, and a display panel. The array substrate comprises: a base (10); a pixel electrode (50) and a thin-film transistor which are provided on the base (10); a passivation layer (16) covering the thin-film transistor and the pixel electrode (50), wherein an adapting via hole (K1, K2), which simultaneously exposes the pixel electrode (50) and a drain electrode (15) or a source electrode (14) of the thin-film transistor, is provided in the passivation layer (16); and a connection electrode (60) which is provided on the passivation layer (16) and is at the adapting via hole (K1, K2), wherein the connection electrode (60) is simultaneously connected, through the adapting via hole (K1, K2), to the pixel electrode (50) and the drain electrode (15) or the source electrode (14). Realizing connection between the drain electrode (15) or the source electrode (14) and the pixel electrode (50) by providing the adapting via hole (K1, K2) effectively reduces the number of via holes, increases an aperture ratio of the display panel, improves product quality, and improves the yield.

    ARRAY SUBSTRATE AND METHOD FOR PREPARING SAME, AND DISPLAY PANEL

    公开(公告)号:EP3913427A1

    公开(公告)日:2021-11-24

    申请号:EP19910539.6

    申请日:2019-12-18

    摘要: Disclosed are an array substrate and a method for preparing same, and a display panel. The array substrate comprises: a base (10); a pixel electrode (50) and a thin-film transistor which are provided on the base (10); a passivation layer (16) covering the thin-film transistor and the pixel electrode (50), wherein an adapting via hole (K1, K2), which simultaneously exposes the pixel electrode (50) and a drain electrode (15) or a source electrode (14) of the thin-film transistor, is provided in the passivation layer (16); and a connection electrode (60) which is provided on the passivation layer (16) and is at the adapting via hole (K1, K2), wherein the connection electrode (60) is simultaneously connected, through the adapting via hole (K1, K2), to the pixel electrode (50) and the drain electrode (15) or the source electrode (14). Realizing connection between the drain electrode (15) or the source electrode (14) and the pixel electrode (50) by providing the adapting via hole (K1, K2) effectively reduces the number of via holes, increases an aperture ratio of the display panel, improves product quality, and improves the yield.

    THIN FILM TRANSISTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS
    9.
    发明公开
    THIN FILM TRANSISTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS 审中-公开
    薄膜晶体管器件,其制造方法和显示装置

    公开(公告)号:EP3227913A1

    公开(公告)日:2017-10-11

    申请号:EP15849828.7

    申请日:2015-08-14

    摘要: Various embodiments provide a thin film transistor (TFT) device, a manufacturing method of the TFT device, and a display apparatus including the TFT device. An etch stop layer (ESL) material is formed on an active layer on a substrate. An electrical conductive layer material is formed on the ESL material for forming a source electrode and a drain electrode. The electrical conductive layer material is patterned to form a first portion of the source electrode containing a first via-hole through the source electrode, and to form a first portion of the drain electrode containing a second via-hole through the drain electrode. The ESL material is patterned to form an etch stop layer (ESL) pattern including a first ESL via-hole connecting to the first via-hole through the source electrode and including a second ESL via-hole connecting to the second via-hole through the drain electrode.

    摘要翻译: 各种实施例提供薄膜晶体管(TFT)器件,TFT器件的制造方法以及包括该TFT器件的显示装置。 在衬底(1)上的有源层(4)上形成蚀刻停止层(ESL)材料(5)。 在ESL材料(5)上形成导电层材料以形成源电极和漏电极。 导电层材料被图案化以形成包含穿过源电极的第一通孔(91a)的源电极(61)的第一部分,并且形成包含第二通孔(91)的第一部分漏电极 (92a)穿过漏电极。 ESL材料(5)被图案化以形成包括通过源电极连接到第一通孔(91a)并且包括第二ESL通孔(91b)的第一ESL通孔(91b)的蚀刻停止层(ESL) (92b)通过漏电极连接到第二通孔(92a)。