摘要:
Soft polishing pads for polishing semiconductor substrates are described. A soft polishing pad includes a molded homogeneous polishing body having a thermoset, closed cell polyurethane material with a hardness approximately in the range of 20 Shore D to 45 Shore D.
摘要:
Low density polishing pads and methods of fabricating low density polishing pads are described. In an example, a polishing pad (222) for polishing a substrate includes a polishing body having a density approximately in the range of 0.4 - 0.55 g/cc. The polishing body includes a thermoset polyurethane material and a plurality of closed cell pores (218) dispersed in the thermoset polyurethane material. Each of the plurality of closed cell pores (218) has a shell composed of an acrylic co-polymer.