公开(公告)号：EP3384534A1

公开(公告)日：2018-10-10

申请号：EP16813091.2

申请日：2016-11-28

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： FERRET, Pierre ,  KAHOULI, Abdelkarim

IPC分类号： H01L31/0352 ,  H01L31/0304

CPC分类号： H01L31/035227 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/035236 ,  Y02E10/544

摘要： The invention relates to an optoelectronic device (1), comprising at least one microwire or nanowire (2) extending along a longitudinal axis (Δ) substantially orthogonal to a plane of a substrate (3), and comprising: - a first doped portion (10) produced from a first semiconductor compound; - an active zone (30) extending from the first doped portion (10); - a second doped portion (20), at least partially covering the active zone (30); characterised in that the active zone comprises a wider single-crystal portion (31): - formed of a single crystal of a second semiconductor compound made from a mixture of the first semiconductor compound and at least one additional element; - extending from an upper face (14) of one end (11) of the first doped portion (10), and - having a mean diameter greater than that of the first doped portion.

公开(公告)号：EP2769416A2

公开(公告)日：2014-08-27

申请号：EP12787788.4

申请日：2012-10-19

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： THIERRY, Robin ,  FERRET, Pierre ,  LAFOSSAS, Matthieu ,  PERILLAT-MERCEROZ, Guillaume

IPC分类号： H01L29/22 ,  H01L29/06 ,  H01L33/00 ,  H01L33/18 ,  H01L21/02 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y10/00

CPC分类号： H01L21/02639 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/0262 ,  H01L29/0676 ,  H01L29/22 ,  H01L33/0083 ,  Y10S977/891

摘要： This method for producing an organised network of nanowires from ZnO comprises the following steps: obtaining a layer (1) of ZnO with Zn polarity on a substrate (5), by epitaxial growth at a low temperature, advantageously between 400°C and 650°C, and advantageously in the presence of dioxygen (O
2 ); forming a mask (2) provided with openings (3) on this layer for the subsequent growth of the nanowires; epitaxial growth of ZnO nanowires (4).

公开(公告)号：EP2240954B1

公开(公告)日：2013-03-27

申请号：EP08873890.1

申请日：2008-11-27

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique - CNRS -

发明人： ERNST, Thomas ,  BARON, Thierry ,  FERRET, Pierre ,  GENTILE, Pascal ,  SALEM, Bassem

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L29/06 ,  B82Y10/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0673 ,  Y10S977/938

公开(公告)号：EP2391578B1

公开(公告)日：2013-01-02

申请号：EP10701373.2

申请日：2010-01-28

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： NEEL, Delphine ,  FERRET, Pierre ,  GETIN, Stéphane

IPC分类号： B82B3/00 ,  H01L21/00 ,  C30B11/12 ,  C30B29/60

CPC分类号： C30B29/60 ,  C30B11/12

公开(公告)号：EP2027608B1

公开(公告)日：2018-08-15

申请号：EP07730017.6

申请日：2007-06-08

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： GILET, Philippe ,  FERRET, Pierre ,  GENTILE, Pascal ,  TCHELNOKOV, Alexei ,  BARON, Thierry

IPC分类号： H01L33/00 ,  H01L33/08 ,  H01L33/18 ,  C30B25/00 ,  C30B29/62 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/50 ,  C30B29/40

CPC分类号： C30B25/00 ,  C30B29/403 ,  C30B29/605 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/32 ,  H01L33/38 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP3144983B1

公开(公告)日：2018-03-28

申请号：EP16189528.9

申请日：2016-09-19

申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

发明人： ROBIN, Ivan-Christophe ,  DUSSAIGNE, Amélie ,  FERRET, Pierre

IPC分类号： H01L33/06 ,  H01L33/24 ,  H01L33/30

CPC分类号： H01L33/06 ,  H01L33/0025 ,  H01L33/24 ,  H01L33/30 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0033

公开(公告)号：EP2240954A1

公开(公告)日：2010-10-20

申请号：EP08873890.1

申请日：2008-11-27

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique - CNRS -

发明人： ERNST, Thomas ,  BARON, Thierry ,  FERRET, Pierre ,  GENTILE, Pascal ,  SALEM, Bassem

IPC分类号： H01L21/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0673 ,  Y10S977/938

摘要： Electrodes (3) made of a metallic material are formed on a layer of dielectric material (2). A lower layer of at least one of the electrodes (3) constitutes a catalyst material (4) in direct contact with the layer of dielectric material (2). Nanowires (6) are grown by means of the catalyst (4), between the electrodes (3), parallel to the layer of dielectric material (2). The nanowires (6) connecting the two electrodes (3) are therefore made of a single-crystal semiconductor material and in contact with the layer of dielectric material (2).

公开(公告)号：EP2391578A1

公开(公告)日：2011-12-07

申请号：EP10701373.2

申请日：2010-01-28

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： NEEL, Delphine ,  FERRET, Pierre ,  GETIN, Stéphane

IPC分类号： B82B3/00 ,  H01L21/00 ,  C30B11/12 ,  C30B29/60

CPC分类号： C30B29/60 ,  C30B11/12

摘要： The invention relates to a method for forming nanowires (nf) on the surface of a substrate (S) attached to a solid immersion lens, the method including a step of forming a catalyst element (P) on the surface of the substrate and a step of growing the nanowire (nf) using the catalyst element formed on the surface of the substrate (S), characterised in that the catalyst element is a metal nanoparticle (P) and in that the step of forming the catalyst element on the surface of the substrate comprises depositing the metal nanoparticle using a light beam focussed by the solid immersion lens on the surface of the substrate. The invention can be used in the field of microelectronics.