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1.发明公开TRAITEMENT DE SURFACE PAR PLASMA D'AZOTE DANS UN PROCÉDÉ DE COLLAGE DIRECT 有权氮等离子体表面处理直接结合PROCEDURE
公开(公告)号：EP2304787A1
公开(公告)日：2011-04-06
申请号：EP09765984.1
申请日：2009-04-28
发明人： MORICEAU, Hubert , MORALES, Christophe , RIEUTORD, François , VENTOSA, Caroline , CHEVOLLEAU, Thierry
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/2007
摘要： Two wafers, each having on a surface thereof a thin silicon or silicon oxide film, are bonded by subjecting the thin film of at least one wafer to a surface treatment forming a thin silicon oxynitride surface film with a thickness of less than 5 nm. The thin film is formed by means of a nitrogen-based plasma, generated by an inductively coupled plasma source. In addition, the potential difference between the plasma and a substrate holder supporting said wafer, during the surface treatment, is less than 50 V, advantageously less than 15 V and preferably zero. This makes it possible to obtain a defect-free bonding interface irrespective of the temperature of any heat treatment carried out after the contacting step.
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公开(公告)号：EP4128322A1
公开(公告)日：2023-02-08
申请号：EP21704872.7
申请日：2021-01-19
发明人： MAZEN, Frédéric , RIEUTORD, François , COIG, Marianne , GRAMPEIX, Helen , LANDRU, Didier , KONONCHUK, Oleg , BEN MOHAMED, Nadia
IPC分类号： H01L21/02 , H01L21/18 , H01L21/324 , H01L21/762
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3.发明授权TRAITEMENT DE SURFACE PAR PLASMA D'AZOTE DANS UN PROCÉDÉ DE COLLAGE DIRECT 有权氮等离子体表面处理直接结合PROCEDURE
公开(公告)号：EP2304787B1
公开(公告)日：2011-10-19
申请号：EP09765984.1
申请日：2009-04-28
发明人： MORICEAU, Hubert , MORALES, Christophe , RIEUTORD, François , VENTOSA, Caroline , CHEVOLLEAU, Thierry
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/2007
摘要： Two wafers, each having on a surface thereof a thin silicon or silicon oxide film, are bonded by subjecting the thin film of at least one wafer to a surface treatment forming a thin silicon oxynitride surface film with a thickness of less than 5 nm. The thin film is formed by means of a nitrogen-based plasma, generated by an inductively coupled plasma source. In addition, the potential difference between the plasma and a substrate holder supporting said wafer, during the surface treatment, is less than 50 V, advantageously less than 15 V and preferably zero. This makes it possible to obtain a defect-free bonding interface irrespective of the temperature of any heat treatment carried out after the contacting step.
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4.发明公开
公开(公告)号：EP4303175A1
公开(公告)日：2024-01-10
申请号：EP23183245.2
申请日：2023-07-04
IPC分类号： B81C1/00
摘要： La présente invention concerne un procédé de fabrication d'une structure comprenant une pluralité de membranes chacune surplombant une cavité, le procédé de fabrication comprenant les étapes suivantes :
a) une étape de formation d'une pluralité de cavités débouchant au niveau d'une face avant d'un substrat support, les cavités présentant une profondeur et une aire dans le plan de la face avant, et étant espacées d'un espacement ;
b) une étape d'assemblage par collage direct d'un substrat donneur sur le substrat support, au niveau de leurs faces avant respectives, de manière à sceller les cavités sous vide, le collage direct étant hydrophile et impliquant un nombre donné de monocouches d'eau à une interface de contact entre les substrats ;
c) une étape de transfert d'une couche mince issue du substrat donneur sur le substrat support, ladite couche mince composant les membranes à l'aplomb des cavités.
Une aire spécifique est définie autour de chaque cavité, dans le plan de l'interface de contact, et s'exprime en fonction de la moitié de l'espacement. Le procédé de fabrication est remarquable en ce que l'aire, la profondeur de chaque cavité, et l'aire spécifique sont définies à l'étape a) pour satisfaire la relation suivante : S / A = (P atm × p) / (N × 10 15 × k B × T), avec P atm la pression atmosphérique, N le nombre de monocouches d'eau à l'interface de contact, k B la constante de Boltzmann et T la température ambiante.-
公开(公告)号：EP3497713B1
公开(公告)日：2020-04-08
申请号：EP17757806.9
申请日：2017-08-01
发明人： LANDRU, Didier , BEN MOHAMED, Nadia , KONONCHUK, Oleg , MAZEN, Frédéric , MASSY, Damien , REBOH, Shay , RIEUTORD, François
IPC分类号： H01L21/762
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公开(公告)号：EP2828635A1
公开(公告)日：2015-01-28
申请号：EP13715306.0
申请日：2013-03-12
CPC分类号： G01N21/9505 , G01B11/14 , G01N21/9501 , G01P3/36 , H01L21/76254 , H01L22/12
摘要： The invention relates to a system for measuring a zone of separation in a substrate. This system (2) for measuring the propagation of a zone C of separation between a first portion (4) and a second portion (5) of at least one substrate (6) comprises: a module (10) for emitting at least two incident beams Fi each of which illuminates a separate point on the substrate (6), the at least two incident beams Fi being able to pass through the first portion (4) and the zone C of separation and meet the second portion (5) in such a way that each of them generates at least one first emergent beam Fe originating from the interface between the first portion (4) and the zone C of separation, and at least one second emergent beam Fe originating from the interface between the zone C of separation and the second portion (5); a detecting module (8) for detecting light intensity values resulting from interference between the first and second emergent beams Fe; and a computer (11) for determining the conditions of the propagation of the zone C of separation.
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公开(公告)号：EP3497713A1
公开(公告)日：2019-06-19
申请号：EP17757806.9
申请日：2017-08-01
发明人： LANDRU, Didier , BEN MOHAMED, Nadia , KONONCHUK, Oleg , MAZEN, Frédéric , MASSY, Damien , REBOH, Shay , RIEUTORD, François
IPC分类号： H01L21/762
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8.发明公开PROCEDE DE COLLAGE DANS UNE ATMOSPHERE DE GAZ PRESENTANT UN COEFFICIENT DE JOULE-THOMSON NEGATIF 有权BINDUNGSVERFAHREN IN DERATMOSPHÄREEINES GASES MIT EINEM NEGATIVEN JOULE-THOMSON-KOEFFIZIENTEN
公开(公告)号：EP2842155A1
公开(公告)日：2015-03-04
申请号：EP13727372.8
申请日：2013-04-24
发明人： RIEUTORD, François
IPC分类号： H01L21/20 , H01L21/18 , H01L21/762
CPC分类号： H01L21/76251 , H01L21/187 , H01L21/2007 , H01L21/302 , H01L21/76254 , H01L24/80 , H01L25/0657
摘要： The present invention relates to a process for direct bonding two substrates, comprising at least: (a) bringing the surfaces to be bonded of said substrates in close contact; and (b) propagating a bonding wave between said substrates, characterised in that said substrates are kept, during step (b), in an atmosphere of a gas having a negative Joule-Thomson coefficient at the temperature and pressure of said atmosphere.
摘要翻译： 本发明涉及一种用于直接接合两个基底的方法，该方法至少包括：（a）使所述基底的待粘接表面紧密接触; 和（b）在所述衬底之间传播结合波，其特征在于，在步骤（b）期间，在所述气氛的温度和压力下，在具有负焦耳 - 汤姆逊系数的气体的气氛中保持所述衬底。
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公开(公告)号：EP1805507B1
公开(公告)日：2018-03-21
申请号：EP05815948.4
申请日：2005-10-24
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公开(公告)号：EP1842209B1
公开(公告)日：2012-02-01
申请号：EP06709137.1
申请日：2006-01-20
发明人： RIEUTORD, François
IPC分类号： G21K1/06
CPC分类号： G21K1/06 , G21K2201/062 , G21K2201/067 , Y10T29/49826
摘要： The invention relates to a monochromator device (14) for selecting at least one wavelength band from incident radiation in a given wavelength range. The invention is characterised in that it comprises: at least one optical layer (30) of a monocrystalline material having a crystallographic line that is adapted to said at least one wavelength band to be selected; and a mechanical substrate (32). According to the invention, said at least one optical layer and the mechanical substrate are assembled by means of molecular bonding.
摘要翻译： 本发明涉及用于从给定波长范围内的入射辐射中选择至少一个波长带的单色器装置（14）。 本发明的特征在于它包括：至少一个单晶材料的光学层（30），其具有适于待选择的所述至少一个波段的晶体学线; 和机械基板（32）。 根据本发明，所述至少一个光学层和机械基板通过分子结合进行组装。
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