公开(公告)号：EP1900014A2

公开(公告)日：2008-03-19

申请号：EP06792480.3

申请日：2006-07-04

申请人： Commissariat à l'Energie Atomique ,  UNIVERSITE PARIS-SUD (PARIS XI)

发明人： SOUKIASSIAN, Patrick

IPC分类号： H01L21/28

CPC分类号： H01L21/049 ,  H01L29/1608 ,  H01L29/518

摘要： The invention concerns a substrate, in particular made of silicon carbide, coated with a thin stoichiometric film of silicon nitride, for making electronic components, and a method for obtaining such a film. The method for obtaining the film on the substrate (1) in the presence of at least one nitrogen-containing gas, consists in coating a layer (2) of a material permeable to said gas and causing the silicon nitride film to be formed at the interface between the substrate and the material layer. The invention is applicable in particular in microelectronics.

公开(公告)号：EP1759406A1

公开(公告)日：2007-03-07

申请号：EP05778242.7

申请日：2005-06-20

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  UNIVERSITE PARIS-SUD (PARIS XI)

发明人： RADTKE, Claudio ,  SILLY, Mathieu ,  SOUKIASSIAN, Patrick ,  ENRIQUEZ, Hanna

IPC分类号： H01L21/285 ,  H01L21/04

CPC分类号： H01L21/28512 ,  H01L21/045 ,  H01L21/0485 ,  H01L2924/0002 ,  Y10T428/31678 ,  H01L2924/00

摘要： The invention concerns a method for metallizing the previously passivated surface of a semiconductor material and resulting material. The invention, which is applicable in microelectronics, is characterized in that it consists in: preparing the surface of the material (2) so that it contains bonds capable of absorbing hydrogen atoms or a metal element, passivating one or more layers, preferably immediately underlying the surface, by exposing same to a passivating compound, and metallizing the surface (4) by exposing same to hydrogen atoms or the metal element.

公开(公告)号：EP1897145A1

公开(公告)日：2008-03-12

申请号：EP06777518.9

申请日：2006-06-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  UNIVERSITE PARIS-SUD (PARIS XI)

发明人： SOUKIASSIAN, Patrick ,  SILLY, Mathieu Studio ,  CHARRA, Fabrice

IPC分类号： H01L29/12 ,  H01L29/861

CPC分类号： H01L29/861 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/125 ,  H01L29/127 ,  H01L29/1608

摘要： The invention concerns nanostructures of 0, 1, 2 and 3 dimensions, with negative differential resistance and a method for making said nanostructures. The inventive nanostructure is in particular useful in nanoelectronics. It comprises at least one structure (32) or at least a plurality of said at least one structure, on the surface of a silicon carbide substrate (30), the structure being selected among quantum connection pads, atomic segments, atomic lines and aggregates, and at least one metal deposit (34), said metal deposit covering at least the structure or at least the plurality of said at least one structure, or the combination o at least two of said structures with 0, 1, 2 or 3 dimensions.

公开(公告)号：EP1900012A1

公开(公告)日：2008-03-19

申请号：EP06764054.0

申请日：2006-07-04

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  UNIVERSITE PARIS-SUD (PARIS XI)

发明人： SOUKIASSIAN, Patrick ,  SEMOND, Fabrice

IPC分类号： H01L21/28

CPC分类号： H01L21/28229 ,  H01L21/049

摘要： The invention concerns a highly oxygen-sensitive silicon layer and a method for obtaining same. Said layer (2), formed on a substrate (4) for example made of SiC, has a 3x2 structure. The method for obtaining same consists in depositing silicon substantially uniformly on one surface of the substrate. The invention is applicable for example in microelectronics.

公开(公告)号：EP1966586A1

公开(公告)日：2008-09-10

申请号：EP06847091.3

申请日：2006-12-20

申请人： Commissariat à l'Energie Atomique ,  UNIVERSITE PARIS-SUD (PARIS 11)

发明人： CHARRA, Fabrice ,  SILLY, Matthieu ,  SOUKIASSIAN, Patrick

IPC分类号： G01N13/12 ,  G12B21/04

CPC分类号： G01Q60/12

摘要： The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.

公开(公告)号：EP1913642A1

公开(公告)日：2008-04-23

申请号：EP06792732.7

申请日：2006-08-08

申请人： Commissariat à l'Energie Atomique

发明人： AROUTIOUNIAN, Vladimir ,  MARTIROSYAN, Khachatur ,  SOUKIASSIAN, Patrick

IPC分类号： H01L31/0216 ,  G02B1/11 ,  G02B1/10

CPC分类号： G02B1/115 ,  G02B1/105 ,  G02B1/113 ,  G02B2207/107 ,  H01L31/02168 ,  Y02E10/50

摘要： The invention relates to an antireflection coating, particularly for solar cells, and to a method for producing this coating. An inventive antireflection coating (4) comprises at least one antireflection inner layer (6) made of porous silicon and comprises an outer layer (8) made of silicon oxynitride, which is essentially non-porous, essentially free from foreign species and which is formed on the inner layer.

摘要翻译： 本发明涉及抗反射涂层，特别是涉及太阳能电池的抗反射涂层及其制造方法。 本发明的抗反射涂层（4）包括由多孔硅制成的至少一个抗反射内层（6），并且包括由氮氧化硅制成的外层（8），其基本上是无孔的，基本上不含外来物质，并形成 在内层。