公开(公告)号：EP2751843A2

公开(公告)日：2014-07-09

申请号：EP12747907.9

申请日：2012-07-26

申请人： Dow Corning Corporation ,  IMEC

发明人： BEAUCARNE, Guy ,  NORRIS, Ann, Walstrom ,  GOVAERTS, Jonathan ,  DROSS, Frederic

IPC分类号： H01L31/042 ,  H01L31/048

CPC分类号： H01L31/0487 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1892 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a solar module is described. The method enables a semiconductor element to be mounted onto a load-bearing member early on in the manufacturing process without any undesired effects during later processing.

公开(公告)号：EP2856509A1

公开(公告)日：2015-04-08

申请号：EP13732278.0

申请日：2013-04-25

申请人： Dow Corning Corporation

发明人： ASAD, Syed, Salman ,  BEAUCARNE, Guy ,  DESCAMPS, Pierre ,  KAISER, Vincent ,  LEEMPOEL, Partrick

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02167 ,  H01L21/02126 ,  H01L21/02274 ,  H01L23/564 ,  H01L31/022425 ,  H01L31/18 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.

公开(公告)号：EP2856496A1

公开(公告)日：2015-04-08

申请号：EP13721501.8

申请日：2013-04-25

申请人： Dow Corning Corporation

发明人： ASAD, Syed, Salman ,  BEAUCARNE, Guy ,  DESCAMPS, Pierre ,  KAISER, Vincent ,  LEEMPOEL, Patrick

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L31/02

CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/4481 ,  C23C16/45595 ,  C23C16/505 ,  C23C16/513 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3105 ,  H01L22/10 ,  H01L31/02167 ,  H05H1/46 ,  H05H2001/4697 ,  Y02E10/50

摘要： Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.

摘要翻译： 制造涂覆有钝化层的硅晶片。 涂覆的硅晶片可适用于光伏电池，光伏电池将来自照射在电池正面上的光的能量转换成电能。

公开(公告)号：EP2215663B1

公开(公告)日：2011-05-25

申请号：EP08856838.1

申请日：2008-12-02

申请人： IMEC ,  Photovoltech

发明人： DROSS, Frédéric ,  ALLEBÉ, Christophe ,  SZLUFCIK, Jozef ,  BEAUCARNE, Guy

IPC分类号： H01L31/0224

CPC分类号： H01L31/1804 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02245 ,  Y02E10/547 ,  Y02P70/521

摘要： A photovoltaic device in a semiconductor substrate, has a radiation receiving front surface and a rear surface, a first region of one conductivity type (29), and a second region with the opposite conductivity type (20) adjacent to the front surface, and an antireflection layer (27). The rear surface is covered by a dielectric layer (39) covering also an inside surface of the via. The front surface has current collecting conductive contacts (23) and the rear surface has conductive contacts (31) extending through the said dielectric. A conductive path is provided in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed, and the same dielectric serves to insulate, provide thermal protection for the semiconductor, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.

公开(公告)号：EP2215663A2

公开(公告)日：2010-08-11

申请号：EP08856838.1

申请日：2008-12-02

申请人： IMEC ,  Photovoltech

发明人： DROSS, Frédéric ,  ALLEBÉ, Christophe ,  SZLUFCIK, Jozef ,  BEAUCARNE, Guy

IPC分类号： H01L31/0224

CPC分类号： H01L31/1804 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02245 ,  Y02E10/547 ,  Y02P70/521

摘要： A photovoltaic device in a semiconductor substrate, has a radiation receiving front surface and a rear surface, a first region of one conductivity type (29), and a second region with the opposite conductivity type (20) adjacent to the front surface, and an antireflection layer (27). The rear surface is covered by a dielectric layer (39) covering also an inside surface of the via. The front surface has current collecting conductive contacts (23) and the rear surface has conductive contacts (31) extending through the said dielectric. A conductive path is provided in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed, and the same dielectric serves to insulate, provide thermal protection for the semiconductor, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.

公开(公告)号：EP1859488B1

公开(公告)日：2018-11-21

申请号：EP06707582.0

申请日：2006-03-16

申请人： IMEC VZW

发明人： AGOSTINELLI, Guido ,  BEAUCARNE, Guy ,  CHOULAT, Patrick

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/02

CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for the production of a solar cell is disclosed , comprising the steps of providing a silicon substrate having a front main surface and a back main surface; depositing a dielectric layer on the back main surface; depositing a passivation layer comprising hydrogenated SiN on top of the dielectric layer; forming holes in the dielectric layer and the SiN:H layer; depositing a layer of contacting material onto the dielectric layer, hereby filling, the holes; and applying a high temperature step. Furthermore a solar cell device is disclosed comprising a silicon substrate having a front main surface and a back main surface; a dielectric layer on the back main surface; a passivation layer comprising hydrogenated SiN on top of the dielectric layer; holes through the dielectric layer and theSiN:H layer; and layer of contacting material onto the dielectric layer, the layer also filling the holes.

公开(公告)号：EP2215663B2

公开(公告)日：2016-08-17

申请号：EP08856838.1

申请日：2008-12-02

申请人： IMEC

发明人： DROSS, Frédéric ,  ALLEBÉ, Christophe ,  SZLUFCIK, Jozef ,  BEAUCARNE, Guy

IPC分类号： H01L31/0224

CPC分类号： H01L31/1804 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02245 ,  Y02E10/547 ,  Y02P70/521