公开(公告)号：EP1351289A1

公开(公告)日：2003-10-08

申请号：EP03007398.5

申请日：2003-04-02

申请人： EBARA CORPORATION ,  NEC Electronics Corporation

发明人： Ito, Nobukazu ,  Hongo, Akihisa ,  Fukunaga, Akira ,  Nagai, Mizuki ,  Kimizuka, Ryoichi ,  Kobayashi, Takeshi ,  Sato, Takuro

IPC分类号： H01L21/768 ,  H01L21/288

CPC分类号： H01L21/76877 ,  H01L21/288 ,  H01L23/53228 ,  H01L2924/0002 ,  H05K3/107 ,  H05K3/244 ,  H05K3/38 ,  H05K3/388 ,  H05K3/423 ,  H05K2201/09036 ,  H01L2924/00

摘要： There is provided a method and apparatus for forming fine circuit interconnects that can form, by copper plating, copper interconnects in which movement of copper atoms is retarded or suppressed whereby electromigration is prevented. The method for forming fine circuit interconnects, comprising, providing a substrate for electronic circuit having fine circuit patterns which are covered with a barrier layer (4) and optionally a seed layer (5), forming a first plated film (6) on the surface of the substrate by copper alloy plating, and forming a second plated film (7) on the surface of the first plated film by copper plating.

摘要翻译： 提供一种用于形成精细电路互连的方法和装置，其可以通过镀铜形成铜互连，其中铜原子的移动被延迟或抑制，从而防止电迁移。 一种用于形成精细电路互连的方法，包括：提供具有由阻挡层（4）和任选的种子层（5）覆盖的精细电路图案的电子电路用基板，在该表面上形成第一镀膜（6） 通过铜合金镀覆所述基板，并且通过镀铜在所述第一镀膜的表面上形成第二镀膜（7）。

公开(公告)号：EP1026286A2

公开(公告)日：2000-08-09

申请号：EP00101506.4

申请日：2000-01-26

申请人： EBARA CORPORATION ,  KABUSHIKI KAISHA TOSHIBA

发明人： Mishima, Koji ,  Nagai, Mizuki ,  Kimizuka, Ryoichi ,  Matsuda, Tetsuo ,  Kaneko, Hisashi

IPC分类号： C25D5/34 ,  C25D7/12 ,  C25D5/18

CPC分类号： C25D17/001 ,  C25D5/18 ,  C25D5/34 ,  C25D7/123 ,  H05K3/22 ,  H05K2203/0392 ,  H05K2203/122 ,  Y10S205/917

摘要： The present invention relates to a method and apparatus for separating out metal copper according to an electroplating of copper using, for example, a solution of copper sulfate to produce copper interconnections on a surface of a substrate. The substrate is brought into contact, at least once, with a processing solution containing at least one of organic substance and sulfur compound which are contained in a plating solution. Thereafter, the substrate is brought into contact with the plating solution to plate the substrate.

摘要翻译： 本发明涉及一种通过使用例如硫酸铜溶液电镀铜来分离金属铜以在衬底表面上产生铜互连的方法和设备。 使基材与含有电镀液中含有的有机物和硫化合物中的至少一种的处理液接触至少一次。 之后，使衬底与电镀液接触以镀覆衬底。

公开(公告)号：EP1167585A3

公开(公告)日：2008-07-30

申请号：EP01115969.6

申请日：2001-06-29

申请人： EBARA CORPORATION

发明人： Hongo, Akihisa ,  Matsuda, Naoki ,  Ohno, Kanji ,  Kimizuka, Ryoichi

IPC分类号： C25F3/02 ,  H01L21/768 ,  C25F7/00 ,  C09G1/00

CPC分类号： H01L21/76843 ,  C25F3/02 ,  C25F7/00 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H05K3/07 ,  H05K3/107 ,  H05K3/108 ,  H05K2201/0376 ,  H05K2201/09036

摘要： There are provided a method and apparatus for forming interconnects by embedding a metal such as copper (Cu) into recesses for interconnects formed on the surface of a substrate such as a semiconductor substrate. The method of the present invention includes the steps of: providing a substrate having fine recesses formed in the surface; subjecting the surface of the substrate to plating in a plating liquid; and subjecting the plated film formed on the surface of the substrate to electrolytic etching in an etching liquid.

公开(公告)号：EP1026286A3

公开(公告)日：2000-12-27

申请号：EP00101506.4

申请日：2000-01-26

申请人： EBARA CORPORATION ,  KABUSHIKI KAISHA TOSHIBA

发明人： Mishima, Koji ,  Nagai, Mizuki ,  Kimizuka, Ryoichi ,  Matsuda, Tetsuo ,  Kaneko, Hisashi

IPC分类号： C25D5/34 ,  C25D7/12 ,  C25D5/18 ,  H05K3/22

CPC分类号： C25D17/001 ,  C25D5/18 ,  C25D5/34 ,  C25D7/123 ,  H05K3/22 ,  H05K2203/0392 ,  H05K2203/122 ,  Y10S205/917

摘要： The present invention relates to a method and apparatus for separating out metal copper according to an electroplating of copper using, for example, a solution of copper sulfate to produce copper interconnections on a surface of a substrate. The substrate is brought into contact, at least once, with a processing solution containing at least one of organic substance and sulfur compound which are contained in a plating solution. Thereafter, the substrate is brought into contact with the plating solution to plate the substrate.

摘要翻译： 本发明涉及一种使用例如硫酸铜溶液在铜表面上分离掉铜的方法和装置，以产生铜互连。 使基板与包含在电镀液中的含有有机物质和硫化合物中的至少一种的处理液接触至少一次。 此后，使基板与电镀液接触以对基板进行平板化。

公开(公告)号：EP1167583A3

公开(公告)日：2006-05-17

申请号：EP01116035.5

申请日：2001-07-02

申请人： EBARA CORPORATION

发明人： Nagai, Mizuki ,  Okuyama, Shuichi ,  Kimizuka, Ryoichi ,  Kobayashi, Takeshi

IPC分类号： C25D3/38 ,  C25D5/10 ,  C25D17/00

CPC分类号： C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  C25D17/001

摘要： There is provided a copper-plating liquid free from an alkali metal and a cyanide which, when used in plating of a substrate having an outer seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and can embed copper completely into the depth of the fine recesses.
The plating liquid contains divalent copper ions and a complexing agent, and an optional pH adjusting agent.

摘要翻译： 提供了一种不含碱金属和氰化物的镀铜液，当用于镀有具有高外观层和高纵横比微细凹槽的衬底时，可以加强晶种层的薄部分并且可以 将铜完全嵌入到精细凹槽的深处。 电镀液含有二价铜离子和络合剂，以及任选的pH调节剂。

公开(公告)号：EP1167585A2

公开(公告)日：2002-01-02

申请号：EP01115969.6

申请日：2001-06-29

申请人： EBARA CORPORATION

发明人： Hongo, Akihisa ,  Matsuda, Naoki ,  Ohno, Kanji ,  Kimizuka, Ryoichi

IPC分类号： C25F3/02 ,  H01L21/768 ,  C25F7/00 ,  C09G1/00

CPC分类号： H01L21/76843 ,  C25F3/02 ,  C25F7/00 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H05K3/07 ,  H05K3/107 ,  H05K3/108 ,  H05K2201/0376 ,  H05K2201/09036

摘要： There are provided a method and apparatus for forming interconnects by embedding a metal such as copper (Cu) into recesses for interconnects formed on the surface of a substrate such as a semiconductor substrate. The method of the present invention includes the steps of: providing a substrate having fine recesses formed in the surface; subjecting the surface of the substrate to plating in a plating liquid; and subjecting the plated film formed on the surface of the substrate to electrolytic etching in an etching liquid.

摘要翻译： 本发明提供用于形成通过嵌入金属互连的方法和装置：诸如铜（Cu）为凹部为形成于半导体基板的表面上的互连：诸如基材。 本发明的方法包括以下步骤：提供具有在表面形成微细的凹部的基板; 使在电镀液，以电镀基片的表面上; 和对所述镀膜形成在液体蚀刻衬底到电解蚀刻的表面上。

公开(公告)号：EP1167583A2

公开(公告)日：2002-01-02

申请号：EP01116035.5

申请日：2001-07-02

申请人： EBARA CORPORATION

发明人： Nagai, Mizuki ,  Okuyama, Shuichi ,  Kimizuka, Ryoichi ,  Kobayashi, Takeshi

IPC分类号： C25D3/38 ,  C25D5/10 ,  C25D17/00

CPC分类号： C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  C25D17/001

摘要： There is provided a copper-plating liquid free from an alkali metal and a cyanide which, when used in plating of a substrate having an outer seed layer and fine recesses of a high aspect ratio, can reinforce the thin portion of the seed layer and can embed copper completely into the depth of the fine recesses.
The plating liquid contains divalent copper ions and a complexing agent, and an optional pH adjusting agent.

摘要翻译： 提供了不含碱金属和氰化物的镀铜液，当用于具有外籽晶层和高纵横比的精细凹槽的基片时，可以加强种子层的薄部分，并且可以 将铜完全嵌入精细凹槽的深度。 电镀液含有二价铜离子和络合剂，以及任选的pH调节剂。

公开(公告)号：EP1136595A1

公开(公告)日：2001-09-26

申请号：EP00956786.8

申请日：2000-08-30

申请人： EBARA CORPORATION

发明人： Isayama, Yasushi, Ebara Corporation ,  Ueyama, Hiroyuki, Ebara Corporation ,  Kaneko, Hiroyuki, Ebara Corporation ,  Yamakawa, Junitsu, Ebara Corporation ,  Hongo, Akihisa, Ebara Corporation ,  Kimizuka, Ryoichi ,  Maruyama, Megumi

IPC分类号： C25D21/14

CPC分类号： C25D21/18 ,  C25D21/12 ,  C25D21/14

摘要： The present invention resides in that the concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

摘要翻译： 本发明在于在电镀液中整平剂的DASS模具浓度没有被用于填充金属所用的镀覆设备，包括：如在互连沟槽和孔铜在半导体基板的表面等定义为确定性的开采基于峰 区域（AR值）在电镀液测量gemäß到CV或CVS处理的剥离区。