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Patent Agency Ranking
公开(公告)号：EP1716732A2
公开(公告)日：2006-11-02
申请号：EP05706011.3
申请日：2005-01-21
Applicant: ENTHONE, INCORPORATED
Inventor： XU, Chen c/o Enthone Inc. , ZHANG, Yun c/o Enthone Inc. , FAN, Chonglun c/o Enthone Inc. , KHASELEV, Oscar c/o Enthone Inc. , ABYS, Joseph, A. c/o Enthone Inc. , WALCH, Eric , KLEINFELD, Marlies , ECKERT, Hans, Ullrich
IPC: H05K3/34
CPC classification number: H01L23/49582 , C25D5/12 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2924/00014 , H01L2924/01327 , H01L2924/15747 , H01L2924/19041 , H01R4/02 , H01R13/03 , H05K3/3426 , H05K2201/10909 , Y02P70/613 , Y10T428/12722 , H01L2224/45099 , H01L2924/00
Abstract: A method for reducing whisker formation and preserving solderability in tin coatings over metal features of electronic components. The tin coating has internal tensile stress and is between about 0.5 m and about 4.0 m in thickness. There is a nickel-based layer under the tin coating.
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公开(公告)号：EP1230034B1
公开(公告)日：2010-09-08
申请号：EP00978519.7
申请日：2000-11-09
Applicant: ENTHONE, INCORPORATED
Inventor： BELL, Jane , HEYER, Joachim , HUPE, Jurgen , KALKER, Ingo , KLEINFELD, Marlies
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公开(公告)号：EP1230034A1
公开(公告)日：2002-08-14
申请号：EP00978519.7
申请日：2000-11-09
Applicant: ENTHONE, INCORPORATED
Inventor： BELL, Jane , HEYER, Joachim , HUPE, Jurgen , KALKER, Ingo , KLEINFELD, Marlies
IPC: B05D1/18
Abstract: The invention describes a process for non-galvanic tin plating of copper and copper alloys by precipitation of tin from methanesulphonic acid and tin-containing electrolytes, containing a complexing agent. In describing a process by which a durable tin layer which can be soldered is created, which, at the same time, prevents liberation of the base material, this invention discloses that the electrolytes have at least one foreign metal added to form a diffusion barrier in the tin layer.
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公开(公告)号：EP1946362B1
公开(公告)日：2012-01-11
申请号：EP06801412.5
申请日：2006-08-14
Applicant: ENTHONE, INCORPORATED
Inventor： RICHARDSON, Thomas, B. , KLEINFELD, Marlies , RIETMANN, Christian , ZAVARINE, Igor , STEINIUS, Ortrud , ZHANG, Yun , ABYS, Joseph, A.
IPC: H01L21/445 , C25D3/60 , C25D3/64
CPC classification number: H01L21/2885 , C25D3/60 , C25D21/18 , H01L24/11 , H01L24/12 , H01L2224/11462 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01016 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01057 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014
Abstract: A process for forming a solder bump on an under bump metal structure in the manufacture of a microelectronic device comprising exposing the under bump metal structure to an electrolytic bath comprising a source of Sn2+ ions, a source of Ag+ ions, a thiourea compound and/or a quaternary ammonium surfactant; and supplying an external source of electrons to the electrolytic bath to deposit a Sn—Ag alloy onto the under bump metal structure.
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公开(公告)号：EP1946362A2
公开(公告)日：2008-07-23
申请号：EP06801412.5
申请日：2006-08-14
Applicant: ENTHONE, INCORPORATED
Inventor： RICHARDSON, Thomas, B. , KLEINFELD, Marlies , RIETMANN, Christian , ZAVARINE, Igor , STEINIUS, Ortrud , ZHANG, Yun , ABYS, Joseph, A.
IPC: H01L21/44
CPC classification number: H01L21/2885 , C25D3/60 , C25D21/18 , H01L24/11 , H01L24/12 , H01L2224/11462 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01016 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01047 , H01L2924/01057 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014
Abstract: A process for forming a solder bump on an under bump metal structure in the manufacture of a microelectronic device comprising exposing the under bump metal structure to an electrolytic bath comprising a source of Sn2+ ions, a source of Ag+ ions, a thiourea compound and/or a quaternary ammonium surfactant; and supplying an external source of electrons to the electrolytic bath to deposit a Sn—Ag alloy onto the under bump metal structure.
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