公开(公告)号：EP1428006A4

公开(公告)日：2009-09-02

申请号：EP02749692

申请日：2002-06-28

申请人： FEI CO

发明人： LEZEC HENRI J ,  MUSIL CHRISTIAN R

IPC分类号： C23C16/04 ,  G01N1/00 ,  G01N23/225 ,  G21K5/00 ,  H01J37/147 ,  H01J37/21 ,  H01L21/02 ,  H01L21/285

CPC分类号： H01L28/24 ,  C23C16/047 ,  G01N23/225 ,  H01J2237/28 ,  H01J2237/2826 ,  H01J2237/30444 ,  H01J2237/31749

摘要： Methods and apparatus for calibration of a scanned beam system (8) are provided by sampling a calibration specimen (22) containing an array of targets with a spacing between samples that is greater than the spacing between targets in an array and forming an image from the samples to reduce calibration specimen degradation and to magnify calibration errors to enable very fine calibration of the scanned beam system (8).

公开(公告)号：EP1586007A4

公开(公告)日：2009-06-10

申请号：EP04702994

申请日：2004-01-16

申请人： FEI CO

发明人： STEWART DIANE K ,  CASEY J DAVID JR ,  BEATY JOHN ,  MUSIL CHRISTIAN R ,  BERGER STEVEN ,  SIJBRANDIJ SYBREN J

IPC分类号： B01J19/08 ,  C03C15/00 ,  C23F1/00 ,  C23F1/02 ,  C23F3/00 ,  G03F20060101 ,  G03F1/00 ,  G03F9/00 ,  G21K5/10 ,  H01L21/027

CPC分类号： G03F1/74 ,  H01J2237/31744

摘要： Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentration of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100% although the thickness of the substrate is reduced. The invention is suitable for use in the repair of photolitography masks.

公开(公告)号：EP1534873A4

公开(公告)日：2009-09-23

申请号：EP03785301

申请日：2003-08-08

申请人： FEI CO

发明人： FERRANTI DAVID C ,  RAY VALERY ,  SMITH GERALD ,  MUSIL CHRISTIAN R

IPC分类号： B05D3/06 ,  C23C14/22 ,  C23C14/28 ,  C23C14/58 ,  G03F20060101 ,  G03F1/74 ,  H01L21/027

CPC分类号： G03F1/74

公开(公告)号：EP1540665A4

公开(公告)日：2008-02-13

申请号：EP03756838

申请日：2003-09-18

申请人： FEI CO

发明人： STEWART DIANE K ,  CASEY JR J DAVID ,  BEATY JOHN ,  MUSIL CHRISTIAN R ,  BERGER STEVEN

IPC分类号： G21G5/00 ,  A61N5/00 ,  C23C14/00 ,  G03F1/00 ,  G03F9/00 ,  G06K20060101 ,  G06K9/00 ,  H01J37/00 ,  H01L21/027

CPC分类号： G03F1/74 ,  G03F1/72

摘要： Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

公开(公告)号：EP1419418A4

公开(公告)日：2006-11-29

申请号：EP02765886

申请日：2002-07-27

申请人： FEI CO

发明人： MUSIL CHRISTIAN R ,  CASEY DAVID J JR ,  GANNON THOMAS J ,  CHANDLER CLIVE ,  DA XIADONG

IPC分类号： G03F1/00 ,  H01J9/14 ,  H01J37/305 ,  H01L21/027

CPC分类号： G03F1/74 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/31744

摘要： A method and apparatus for electron beam processing using an electron beam (101) activated gas to etch or deposit material. The invention is particularly suitable for repairing defects in lithography masks. By using an electron beam (101) in place of an ion beam, the many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch the substrate. In one embodiment, xenon ditluoride gas is activated by the electron beam (101) to etch a tungsten, tantalum nitride, or molybdenum silicide film on a transmission or reflection mask. To prevent spontaneous etching by the etchant gas in processed sites at which the passivation layer was removed, processed sites can be re-passivated before processing additional sites.