摘要:
The invention relates to a detector with a Silicon Drift Diode (SDD) ( 10 , 200) for use in a charged particle apparatus. Such detectors are well-known for the detection of X-rays, but are not capable to detect secondary or backscattered electrons for two reasons: 1. the volume (20) in the SDD where electron/hole pairs must be generated is too far removed from the surface ( 18 ). This can be solved by known techniques resulting in a shallow layer, for example using thin boron layers. 2. Secondary and/or backscattered electrons are generated with a much higher efficiency than X-rays, as a result of which the current of backscattered electrons is typically too high to be detected due to the limited count rate of a SDD (typically up to 1 Mc/s, equivalent to a maximum electron current of up to 0.16 pA). The invention describes a detector with a SDD ( 200 ) and an amplifier (206), and a feed-back element in the form of, for example, a resistor (208) or a diode, switchably connected to the output of the amplifier. When the feedback element is selected via a switch (209), the detector operates in a Current Measurement Mode for determining electron current, and when the element is not selected the detector operates in its well-known Pulse Height Measurement Mode for determining the energy of X-ray quanta.
摘要:
Electron beam modulation in response to optical pump pulses applied to a sample is measured using SPAD elements. Individual detection events are used to form histograms of numbers of events in time bins associated with pump pulse timing. The histograms can be produced at a SPAD array, simplifying data transfer. In some examples, two SPAD arrays are stacked and a coincidence circuit discriminates signal events from noise events by determining corresponding events are detected withing a predetermined time window.
摘要:
The invention relates to a micro-reactor (100) for observing small particles, cells, bacteria, viruses or protein molecules in a fluid. The micro-reactor shows a first channel (106) formed between two layers (102, 104) for containing the fluid, with an inlet (112) and an outlet (114), the two layers separated by a first distance. A likewise second channel (108) with an inlet (118) and an outlet (116) is placed adjacent to the first channel. A gap connects the first channel and the second channel, at the gap at least one layer showing a window (120) transparent to the method of inspection and at the window the two layers being separated by a very small distance of, for example, 1 µm or less. The micro-reactor may be used with an optical microscope (in which all particles are in focus), inspection with a Scanning Transmission Electron Microscope (in which the range of the electrons is limited), inspection with soft X-rays in the 250-500 eV range (also showing a limited range), etc. A method of using the micro-reactor includes applying a gradient over the gap, thereby causing the particles to cross the gap. The gradient may be static or dynamic, and may be a gradient in concentration, of a chemical or biological material, in pressure, in temperature, in electric potential, or in magnetic field. By detecting a property of the particles upstream in the first channel, e.g. using fluorescent labels on the particles, and then applying a pressure burst over the channels when the property meets certain preset criteria, only selected particles can be placed in the gap.
摘要:
The invention relates to a micro-reactor (100) for observing small particles, cells, bacteria, viruses or protein molecules in a fluid. The micro-reactor shows a first channel (106) formed between two layers (102, 104) for containing the fluid, with an inlet (112) and an outlet (114), the two layers separated by a first distance. A likewise second channel (108) with an inlet (118) and an outlet (116) is placed adjacent to the first channel. A gap connects the first channel and the second channel, at the gap at least one layer showing a window (120) transparent to the method of inspection and at the window the two layers being separated by a very small distance of, for example, 1 µm or less. The micro-reactor may be used with an optical microscope (in which all particles are in focus), inspection with a Scanning Transmission Electron Microscope (in which the range of the electrons is limited), inspection with soft X-rays in the 250-500 eV range (also showing a limited range), etc. A method of using the micro-reactor includes applying a gradient over the gap, thereby causing the particles to cross the gap. The gradient may be static or dynamic, and may be a gradient in concentration, of a chemical or biological material, in pressure, in temperature, in electric potential, or in magnetic field. By detecting a property of the particles upstream in the first channel, e.g. using fluorescent labels on the particles, and then applying a pressure burst over the channels when the property meets certain preset criteria, only selected particles can be placed in the gap.
摘要:
The invention relates to a detector with a Silicon Drift Diode (SDD) ( 10 , 200) for use in a charged particle apparatus. Such detectors are well-known for the detection of X-rays, but are not capable to detect secondary or backscattered electrons for two reasons: 1. the volume (20) in the SDD where electron/hole pairs must be generated is too far removed from the surface ( 18 ). This can be solved by known techniques resulting in a shallow layer, for example using thin boron layers. 2. Secondary and/or backscattered electrons are generated with a much higher efficiency than X-rays, as a result of which the current of backscattered electrons is typically too high to be detected due to the limited count rate of a SDD (typically up to 1 Mc/s, equivalent to a maximum electron current of up to 0.16 pA). The invention describes a detector with a SDD ( 200 ) and an amplifier (206), and a feed-back element in the form of, for example, a resistor (208) or a diode, switchably connected to the output of the amplifier. When the feedback element is selected via a switch (209), the detector operates in a Current Measurement Mode for determining electron current, and when the element is not selected the detector operates in its well-known Pulse Height Measurement Mode for determining the energy of X-ray quanta.
摘要:
The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p + -diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.
摘要:
Electron beam modulation in response to optical pump pulses applied to a sample is measured using SPAD elements. Individual detection events are used to form histograms of numbers of events in time bins associated with pump pulse timing. The histograms can be produced at a SPAD array, simplifying data transfer. In some examples, two SPAD arrays are stacked and a coincidence circuit discriminates signal events from noise events by determining corresponding events are detected withing a predetermined time window.
摘要:
The invention relates to a holder assembly for cooperating with an environmental cell ( 101 ) and an electron microscope, the environmental cell showing a fluid inlet (103), the electron microscope showing a vacuum wall (110) for separating an evacuable part of the electron microscope from the outside of the electron microscope, the holder assembly comprising an electron microscope interface for forming a sealing interface with the electron microscope, the holder assembly comprising an environmental cell interface for forming a sealing interfacing with the fluid inlet (103) of the environmental cell (101), and the holder assembly comprising a tube (126) for connecting a fluid supply to the fluid inlet (103) of the environmental cell (101), characterized in that the holder assembly comprises a first and a second part, the first part detachable from the second part, the first part comprising the tube (126) and the environmental cell interface and the second part comprising the electron microscope interface, as a result of which the first part can be cleaned at high temperatures without exposing the second part to said high temperature. By forming the holder assembly from to detachable parts, one part can be cleaned by heating it to a high temperature of, for example, 1000 °C, clogging in the tubes can be removed by reduction of carbon, while keeping the other part (often comprising mechanical fittings, ball bearing, sliders, or such like) cool. The cleaning can be enhanced by blowing, for example, oxygen or hydrogen through the tubes.
摘要:
The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p + -diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.