Abstract:
Products and assemblies are provided for socketably receiving elongate interconnection elements (516), such as spring contact elements, extending from electronic components (518), such as semiconductor devices. Socket substrates (504) are provided with capture pads (506) for receiving ends of elongate interconnection elements (516) extending from electronic components (518). Various capture pad configurations are disclosed. A securing device such as a housing (520) positions the electronic component securely to the socket substrate (504). Connections to external devices are provided via conductive traces (510) adjacent the surface of the socket substrate. The socket substrate (504) may be supported by a support substrate (502). In a particularly preferred embodiment the capture pads are formed directly on a primary substrate such as a printed circuit board.
Abstract:
Techniques for performing wafer-level burn-in and test of semiconductor devices include a test substrate (106 and 108) having active electronic components (106a, 106b, 106c, 106d) such as ASICs mounted to an interconnection substrate (108) or incorporated therein, metallic spring contact element (110) effecting interconnections between the ASICs and a plurality of devices-under-test (DUTs) (102a, 102b, 102c, 102d) on a wafer-under-test (WUT), all disposed in a vacuum vessel so that the ASICs can be operated at temperatures independent from and significantly lower than the burn-in temperature of the DUTs. The spring contact elements (110) may be mounted to either the DUTs or to the ASICs, and may fan out to relax tolerance constraints on aligning and interconnecting the ASICs and the DUTs. A significant reduction in interconnect count and consequent simplification of the interconnection substrate (108) is realized because the ASICs are capable of receiving a plurality of signals for testing the DUTs over relatively few signal lines from a host controller (116) and promulgating these signals over the relatively many interconnections between the ASICs and the DUTS.
Abstract:
Techniques for performing wafer-level burn-in and test of semiconductor devices include a test substrate (106 and 108) having active electronic components (106a, 106b, 106c, 106d) such as ASICs mounted to an interconnection substrate (108) or incorporated therein, metallic spring contact element (110) effecting interconnections between the ASICs and a plurality of devices-under-test (DUTs) (102a, 102b, 102c, 102d) on a wafer-under-test (WUT), all disposed in a vacuum vessel so that the ASICs can be operated at temperatures independent from and significantly lower than the burn-in temperature of the DUTs. The spring contact elements (110) may be mounted to either the DUTs or to the ASICs, and may fan out to relax tolerance constraints on aligning and interconnecting the ASICs and the DUTs. A significant reduction in interconnect count and consequent simplification of the interconnection substrate (108) is realized because the ASICs are capable of receiving a plurality of signals for testing the DUTs over relatively few signal lines from a host controller (116) and promulgating these signals over the relatively many interconnections between the ASICs and the DUTS.
Abstract:
Products and assemblies are provided for socketably receiving elongate interconnection elements (516), such as spring contact elements, extending from electronic components (518), such as semiconductor devices. Socket substrates (504) are provided with capture pads (506) for receiving ends of elongate interconnection elements (516) extending from electronic components (518). Various capture pad configurations are disclosed. A securing device such as a housing (520) positions the electronic component securely to the socket substrate (504). Connections to external devices are provided via conductive traces (510) adjacent the surface of the socket substrate. The socket substrate (504) may be supported by a support substrate (502). In a particularly preferred embodiment the capture pads are formed directly on a primary substrate such as a printed circuit board.
Abstract:
Products and assemblies are provided for socketably receiving elongate interconnection elements (516), such as spring contact elements, extending from electronic components (518), such as semiconductor devices. Socket substrates (504) are provided with capture pads (506) for receiving ends of elongate interconnection elements (516) extending from electronic components (518). Various capture pad configurations are disclosed. A securing device such as a housing (520) positions the electronic component securely to the socket substrate (504). Connections to external devices are provided via conductive traces (510) adjacent the surface of the socket substrate. The socket substrate (504) may be supported by a support substrate (502). In a particularly preferred embodiment the capture pads are formed directly on a primary substrate such as a printed circuit board.
Abstract:
Techniques for performing wafer-level burn-in and test of semiconductor devices include a test substrate (106 and 108) having active electronic components (106a, 106b, 106c, 106d) such as ASICs mounted to an interconnection substrate (108) or incorporated therein, metallic spring contact element (110) effecting interconnections between the ASICs and a plurality of devices-under-test (DUTs) (102a, 102b, 102c, 102d) on a wafer-under-test (WUT), all disposed in a vacuum vessel so that the ASICs can be operated at temperatures independent from and significantly lower than the burn-in temperature of the DUTs. The spring contact elements (110) may be mounted to either the DUTs or to the ASICs, and may fan out to relax tolerance constraints on aligning and interconnecting the ASICs and the DUTs. A significant reduction in interconnect count and consequent simplification of the interconnection substrate (108) is realized because the ASICs are capable of receiving a plurality of signals for testing the DUTs over relatively few signal lines from a host controller (116) and promulgating these signals over the relatively many interconnections between the ASICs and the DUTS.