公开(公告)号：EP3096353A1

公开(公告)日：2016-11-23

申请号：EP16169901.2

申请日：2016-05-17

申请人： Freescale Semiconductor, Inc.

发明人： Watts, Michael ,  Jones, Jeffrey Kevin ,  Zhu, Ning ,  Volokhine, Youri

IPC分类号： H01L23/66 ,  H01G4/30 ,  H01G4/38

CPC分类号： H03F1/565 ,  H01F27/2804 ,  H01F2027/2809 ,  H01G4/005 ,  H01G4/12 ,  H01G4/30 ,  H01G4/38 ,  H01G4/385 ,  H01G4/40 ,  H01L23/66 ,  H01L24/00 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6661 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/4811 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/00015 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/222 ,  H03F2200/451 ,  H03H7/38 ,  H05K1/111 ,  H05K2201/10015 ,  H05K2201/10022 ,  H05K2201/1003 ,  H05K2201/10166 ,  H01L2224/45099

摘要： A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.

摘要翻译： 所述的装置包括多个陶瓷电容器和一个电流路径结构。 第一陶瓷电容器包括第一电极和第二电极之间的第一陶瓷材料。 第二陶瓷电容器包括第三和第四电极之间的第二陶瓷材料。 第二陶瓷材料具有比第一陶瓷材料的更高的Q值。 电流路径结构包括位于所述第一和第二陶瓷材料，以及第一和第二垂直导体之间的横向导体并从横向导体的第一和第二端延伸到器件表面。 该设备可以被耦合到一个封装的RF放大器装置的底物，所以它包括一个晶体管。 对于实施例，该装置可以形成耦合在所述晶体管的载流端子之间和到RF放大器装置的输出引线的输出阻抗匹配电路的一部分。