摘要:
Provided are a method for bonding a metal body and a bonding structure of a metal body, both providing excellent adhesive force. The method for bonding a metal body according to the invention includes: a step of preparing a first material to be bonded (1), which is a metal body and has a processed layer (11) that has been subjected to a processing for creating atomic vacancies and/or dislocations; a step of supplying fine metal particles (3) between the processed layer (11) of the first material to be bonded (1) and a second material to be bonded (2); and a step of bonding the first material to be bonded (1) and the second material to be bonded (2). The bonding structure of a metal body according to the invention has a first material to be bonded (1), which is formed from a metal and has a processed layer (11) having atomic vacancies and/or dislocations on at least one of main surfaces; a sintered body of fine metal particles formed on the processed layer (11); and a second material to be bonded (2), which is bonded with the first material to be bonded (1) by means of the sintered body of fine metal particles.
摘要:
To provide a connection structure having improved joint life and excellent reliability by preventing generation of cracks or peeling. Provided is a connection structure in which a object to be connected (C) is joined onto a object to be connected (B) by a porous metal layer (A) which is a connector, in which a porosity of the porous metal layer (A) is from 2 volume% to 38 volume%, the porous metal layer (A) includes an approximately ellipsoidal hole (h), an average circularity of an ellipsoidal shape of the hole (h) in a cross section (V) of the porous metal layer (A) in a thickness direction is from 0.80 to 0.90, an average value of inclination angles of a long axis of an ellipsoidal shape of the hole (h) with respect to the normal to the thickness direction of the cross section (V) is equal to or smaller than 57 degrees, and an average long axis length of the ellipsoidal shape of the hole (h) in the cross section (V) is from 30 nm to 500 nm.
摘要:
An object of the present invention is to provide a connection structure that is able to suppress cracking and peeling in a joint surfaces between a pad part on a substrate (or a lead frame) and a porous metal layer and between a semiconductor element and the porous metal layer. A connection structure (I) for connecting a rear electrode of a semiconductor element to a substrate or a lead frame, wherein a porous metal layer (C) is provided so as to come into contact with at least the rear electrode of the semiconductor element, and the ratio [(B)/(A)] of a porosity of an intermediate portion in the thickness direction of an outer peripheral side part (B) of a region further towards the outside than the cross-section part formed at a position of a distance equivalent to the thickness of the porous metal layer (C) from the side surface toward the inside, to the porosity on the center side (A) after having excluded the outer peripheral side part (B), falls within the range of 1.10 to 1.60.