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1.发明授权A COMPOSITION OF MATTER WHICH RESULTS IN ELECTRONIC SWITCHING THROUGH INTRA- OR INTER- MOLECULAR CHARGE TRANSFER BETWEEN MOLECULES AND ELECTRODES INDUCED BY AN ELECTRICAL FIELD 有权物重，要一个电子的传输通过帧内或分子间电荷转移分子与电极之间组成LEADS通过电场诱导
公开(公告)号：EP1747558B1
公开(公告)日：2011-12-28
申请号：EP05749124.3
申请日：2005-05-17
IPC分类号： G11C13/00
CPC分类号： G11C13/0019 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/56 , H01L51/0051 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0078 , H01L51/0591 , H01L51/0595
摘要： A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule (12) and an electrode (14, 16; 14', 16'), wherein the charge transfer is induced by an electric field.
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2.发明授权DEFECT-AND-FAILURE-TOLERANT DEMULTIPLEXER USING SERIES REPLICATION AND ERROR-CONTROL ENCODING 有权缺陷和容错信号分离器系列产品的复制和错误WATCHING编码
公开(公告)号：EP2038750B1
公开(公告)日：2016-05-11
申请号：EP07796813.9
申请日：2007-07-11
IPC分类号： G06F11/10 , H03K19/177
CPC分类号： H03K19/007 , G06F11/1076 , H03K19/00315
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3.发明公开A COMPOSITION OF MATTER WHICH RESULTS IN ELECTRONIC SWITCHING THROUGH INTRA- OR INTER- MOLECULAR CHARGE TRANSFER BETWEEN MOLECULES AND ELECTRODES INDUCED BY AN ELECTRICAL FIELD 有权物重，要一个电子的传输通过帧内或分子间电荷转移分子与电极之间组成LEADS通过电场诱导
公开(公告)号：EP1747558A2
公开(公告)日：2007-01-31
申请号：EP05749124.3
申请日：2005-05-17
IPC分类号： G11C13/00
CPC分类号： G11C13/0019 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/56 , H01L51/0051 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0078 , H01L51/0591 , H01L51/0595
摘要： A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule (12) and an electrode (14, 16; 14', 16'), wherein the charge transfer is induced by an electric field.
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4.发明公开DEFECT-AND-FAILURE-TOLERANT DEMULTIPLEXER USING SERIES REPLICATION AND ERROR-CONTROL ENCODING 有权缺陷和容错信号分离器系列产品的复制和错误WATCHING编码
公开(公告)号：EP2038750A2
公开(公告)日：2009-03-25
申请号：EP07796813.9
申请日：2007-07-11
IPC分类号： G06F11/10 , H03K19/177
CPC分类号： H03K19/007 , G06F11/1076 , H03K19/00315
摘要： One embodiment of the present invention is a method for constructing defect-and-failure-tolerant demultiplexers (figures 14 an 16). This method is applicable to nanoscale, microscal, or larger-scale demultiplexer circuits,. Demultiplexer circuits can be viewed as a set of AND gates (figures 9A-B), each including a reversibly switchable interconnection between a number of address lines (910-912 and 920-922), or address-line-derived signal lines, and an output signal line (914 and 924). Each reversibly switchable interconnection includes one ot more reversibly switchable elements (906-908 and 916-918). In certain demultiplexer embodiments, NMOS (102) and/or PMOS transistors (206) are employed as reversibly switchable elements. In the method that representd one embodiment of the present invention, two or more serially connected transistors (410, 412, and 411, 413; 1502) are employed in each reversibly switchable interconnection, so that short defects in up to one less then the number of serially interconnected transistors does not lead to failure of the reversibly switchable interconnection. In addition, error-control-encoding techniques are used to introduce additional address-line-derived signal lines (1602, 1604) and additional switchable interconnections (1610) so that the demultiplexer may function even when a number of individual, switchable interconnections are open-defective.
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公开(公告)号：EP1872370A1
公开(公告)日：2008-01-02
申请号：EP06758437.5
申请日：2006-04-19
IPC分类号： G11C13/02
CPC分类号： G11C8/10 , B82Y10/00 , G11C13/0023 , G11C13/02 , G11C2213/77 , G11C2213/81 , Y10S977/938
摘要： Various embodiments of the present invention are directed to electronic means for reading the content of a nanowire-crossbar memory. In one embodiment of the present invention, a microscale or sub-microscale signal line (402) is interconnected with one set of parallel nanowires (310-315) emanating from a nanowire-crossbar memory by configurable, nanowire-junction switches (404). The microscale or sub-microscale signal line (402) serves as a single-wire multiplexer, allowing the contents of any particular single-bit atorage element (316) within the nanowire-crossbar memory to be read.
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公开(公告)号：EP1872370B1
公开(公告)日：2012-07-11
申请号：EP06758437.5
申请日：2006-04-19
CPC分类号： G11C8/10 , B82Y10/00 , G11C13/0023 , G11C13/02 , G11C2213/77 , G11C2213/81 , Y10S977/938
摘要： Various embodiments of the present invention are directed to electronic means for reading the content of a nanowire-crossbar memory. In one embodiment of the present invention, a microscale or sub-microscale signal line (402) is interconnected with one set of parallel nanowires (310-315) emanating from a nanowire-crossbar memory by configurable, nanowire-junction switches (404). The microscale or sub-microscale signal line (402) serves as a single-wire multiplexer, allowing the contents of any particular single-bit atorage element (316) within the nanowire-crossbar memory to be read.
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公开(公告)号：EP1974353A2
公开(公告)日：2008-10-01
申请号：EP06851912.3
申请日：2006-11-08
IPC分类号： G11C13/02
CPC分类号： G11C13/0009 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/146 , H01L51/0591
摘要： A control layer (26, 26', 28, 28', 28') for use in a junction of a nanoscale electronic switching device (10) is disclosed. The control layer (26, 26', 28, 28', 28') includes a material that is chemically compatible with a connecting layer (16) and at least one electrode (12, 14) in the nanoscale switching device (10). The control layer (26, 26', 28, 28', 28') is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device (10).
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