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1.发明授权A COMPOSITION OF MATTER WHICH RESULTS IN ELECTRONIC SWITCHING THROUGH INTRA- OR INTER- MOLECULAR CHARGE TRANSFER BETWEEN MOLECULES AND ELECTRODES INDUCED BY AN ELECTRICAL FIELD 有权物重，要一个电子的传输通过帧内或分子间电荷转移分子与电极之间组成LEADS通过电场诱导
公开(公告)号：EP1747558B1
公开(公告)日：2011-12-28
申请号：EP05749124.3
申请日：2005-05-17
IPC分类号： G11C13/00
CPC分类号： G11C13/0019 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/56 , H01L51/0051 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0078 , H01L51/0591 , H01L51/0595
摘要： A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule (12) and an electrode (14, 16; 14', 16'), wherein the charge transfer is induced by an electric field.
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2.发明公开IMPRINTING LITHOGRAPHY USING THE LIQUID/SOLID TRANSITION OF METALS AND THEIR ALLOYS 有权压力光刻使用液体/固体过渡金属及其合金
公开(公告)号：EP1756669A2
公开(公告)日：2007-02-28
申请号：EP05757746.2
申请日：2005-06-08
发明人： CHEN, Yong
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method is provided for imprinting a pattern (18a) having nanoscale features from a mold (10) into the patternable layer (18) on a substrate (14). The method comprises: providing the mold (10); forming the patternable layer (18) on the substrate (14); and imprinting the mold (10) into the patternable layer (18), wherein the patternable layer (18) comprises a metal or alloy having a transition temperature from its solid form to its liquid form that is within a range of at least 10° above room temperature.
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公开(公告)号：EP1556530B1
公开(公告)日：2009-12-09
申请号：EP03773231.0
申请日：2003-10-10
CPC分类号： B82Y30/00 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/605 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.
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4.发明公开TRANSISTOR AND SENSORS MADE FROM MOLECULAR MATERIALS WITH ELECTRIC DIPOLES 审中-公开TRANSISTORS和电偶极分子材料的多个传感器
公开(公告)号：EP1518280A2
公开(公告)日：2005-03-30
申请号：EP03762044.0
申请日：2003-06-26
IPC分类号： H01L51/20 , G01N27/414
CPC分类号： H01L51/0512 , B82Y10/00 , B82Y15/00 , H01L51/005 , H01L51/0595
摘要： A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by a channel region having a length L, formed on a substrate: (b) a dielectric layer on a least a portion of the channel region; and (c) a molecular layer on the dielectric layer, the molecular layer comprising molecules having a switchable dipolar moiety. Addition of a gate over the molecular layer permits fabrication of a transistor, while omission of the gate, and utilization of suitable molecules that are sensitive to various changes in the environment permits fabrication of a variety of sensors. The molecular transistor and sensors are suitable for high density nanoscale circuits and are less expensive than prior art approaches.
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5.发明授权A METHOD FOR MAKING NANOSCALE WIRES AND GAPS FOR SWITCHES AND TRANSISTORS 有权工艺制作影片纳米尺度WIRES和间隙开关和晶体管
公开(公告)号：EP1488452B1
公开(公告)日：2012-05-30
申请号：EP03716500.8
申请日：2003-03-13
发明人： CHEN, Yong , WILLIMAS, R Stanley,
IPC分类号： H01L21/335 , H01L29/775 , G11C13/00 , H01L21/20
CPC分类号： H01L21/3081 , B82Y10/00 , G11C2213/81 , H01L21/3083 , H01L29/0665 , H01L29/0673 , H01L29/42312 , H01L29/66439 , Y10S438/945 , Y10S438/962 , Y10S977/888
摘要： A method for forming first and second linear structure of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition. First and second self-aligned nanowires of a second composition are grown on this layer and used as masks for etching the layer. The self-aligned nanowires are constructed from a material that has as asymmetric lattice mismatch with respect to the crystalline layer. The gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor. The gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.
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6.发明授权
公开(公告)号：EP1765725B1
公开(公告)日：2009-08-05
申请号：EP05856851.0
申请日：2005-06-28
发明人： ISLAM, Saiful M. , CHEN, Yong , WANG, Shih-Yuan
IPC分类号： B81B7/00
CPC分类号： H01L27/1203 , B82Y10/00 , G11C2213/81 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/861
摘要： A nano-scale device 10, 20, 30, 60 and method 40, 50, 70 of fabrication provide a nanowire 14, 24, 34, 64 having (111) vertical sidewalls 14a, 22e, 34a, 64a. The nano-scale device includes a semiconductor-on-insulator substrate 12, 22, 32, 62 polished in a [110] direction, the nanowire, and an electrical contact 26, 35 at opposite ends of the nanowire 24, 34. The method 40, 50, 70 includes wet etching 42, 52, 72 a semiconductor layer 12a, 22a, 32a. 62a of the semiconductor-on-insulator substrate to form 44, 54 the nanowire 24, 34 extending between a pair of islands 22f, 32f in the semiconductor layer 22a, 32a. The method 50 further includes depositing 56 an electrically conductive material on the pair of islands to form the electrical contacts 26, 36. A nano-pn diode 60 includes the nanowire 64 as a first nano-electrode, a pn-junction 66 verically stacked on the nanowire 64, and a second nano-electrode 68 on a (110) horizontal planar end of the pn-junction. The nano-pn diode 60 may be fabricated in array of the diodes on the semiconductor-on-insulator substrate 62.
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7.发明公开
公开(公告)号：EP1765725A2
公开(公告)日：2007-03-28
申请号：EP05856851.0
申请日：2005-06-28
发明人： ISLAM, Saiful M. , CHEN, Yong , WANG, Shih-Yuan
IPC分类号： B81B7/00
CPC分类号： H01L27/1203 , B82Y10/00 , G11C2213/81 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/861
摘要： A nano-scale device 10, 20, 30, 60 and method 40, 50, 70 of fabrication provide a nanowire 14, 24, 34, 64 having (111) vertical sidewalls 14a, 22e, 34a, 64a. The nano-scale device includes a semiconductor-on-insulator substrate 12, 22, 32, 62 polished in a [110] direction, the nanowire, and an electrical contact 26, 35 at opposite ends of the nanowire 24, 34. The method 40, 50, 70 includes wet etching 42, 52, 72 a semiconductor layer 12a, 22a, 32a. 62a of the semiconductor-on-insulator substrate to form 44, 54 the nanowire 24, 34 extending between a pair of islands 22f, 32f in the semiconductor layer 22a, 32a. The method 50 further includes depositing 56 an electrically conductive material on the pair of islands to form the electrical contacts 26, 36. A nano-pn diode 60 includes the nanowire 64 as a first nano-electrode, a pn-junction 66 verically stacked on the nanowire 64, and a second nano-electrode 68 on a (110) horizontal planar end of the pn-junction. The nano-pn diode 60 may be fabricated in array of the diodes on the semiconductor-on-insulator substrate 62.
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8.发明公开A COMPOSITION OF MATTER WHICH RESULTS IN ELECTRONIC SWITCHING THROUGH INTRA- OR INTER- MOLECULAR CHARGE TRANSFER BETWEEN MOLECULES AND ELECTRODES INDUCED BY AN ELECTRICAL FIELD 有权物重，要一个电子的传输通过帧内或分子间电荷转移分子与电极之间组成LEADS通过电场诱导
公开(公告)号：EP1747558A2
公开(公告)日：2007-01-31
申请号：EP05749124.3
申请日：2005-05-17
IPC分类号： G11C13/00
CPC分类号： G11C13/0019 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/56 , H01L51/0051 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0078 , H01L51/0591 , H01L51/0595
摘要： A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule (12) and an electrode (14, 16; 14', 16'), wherein the charge transfer is induced by an electric field.
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9.发明授权IMPRINTING LITHOGRAPHY USING THE LIQUID/SOLID TRANSITION OF METALS AND THEIR ALLOYS 有权压力光刻使用液体/固体过渡金属及其合金
公开(公告)号：EP1756669B1
公开(公告)日：2011-10-05
申请号：EP05757746.2
申请日：2005-06-08
发明人： CHEN, Yong
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method is provided for imprinting a pattern (18a) having nanoscale features from a mold (10) into the patternable layer (18) on a substrate (14). The method comprises: providing the mold (10); forming the patternable layer (18) on the substrate (14); and imprinting the mold (10) into the patternable layer (18), wherein the patternable layer (18) comprises a metal or alloy having a transition temperature from its solid form to its liquid form that is within a range of at least 10° above room temperature.
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10.发明公开A POLYMER SOLUTION FOR NANOPRINT LITHOGRAPHY TO REDUCE IMPRINT TEMPERATURE AND PRESSURE 审中-公开聚合物解纳米压印光刻技术在降低的温度和压力
公开(公告)号：EP1567916A2
公开(公告)日：2005-08-31
申请号：EP03790099.0
申请日：2003-11-26
IPC分类号： G03F7/00
CPC分类号： B29C43/003 , B29C35/0888 , B29C59/022 , B29C2035/0827 , B29C2043/025 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/033
摘要： A method of forming features on substrates (10) by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on the substrate (10) to form a liquid film (12) thereon; and then either: (c) curing the liquid film (12) by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film (12'), the polymer film (12') having a glass transition temperature (Tg); and imprinting the polymer film (12') with a mold (16) having a desired pattern (16a) to form a corresponding negative pattern (12a) in the polymer film (12'), or (d) imprinting the liquid film (12') with the mold (16) and curing it to form the polymer film (12') having the negative pattern (12a). The temperature of imprinting is as little as 10°C above the Tg, or even less if the film (12) is in the liquid state. The pressure (20) of the imprinting can be within the range of 100 to 500 psi.
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