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公开(公告)号：EP1305257A2
公开(公告)日：2003-05-02
申请号：EP01957352.6
申请日：2001-07-30
CPC分类号： H01H1/0036 , G01P15/0802 , G01P15/0894 , H01H59/0009
摘要： A method of making a micro electo-mechanical switch or tunneling sensor. A cantilevered beamstructure and a mating structure are defined on an etch stop layer on a first substrate or wafer;and at least one contact structure and a mating structure are defined on a second substrate orwafer, the mating structure on the second substrate or wafer being of a complementary shape tothe mating structure on the first substrate or wafer. A bonding layer, preferably a eutecticbonding layer, is provided on at least one of the mating structures. The mating structure of thefirst substrate is moved into a confronting relationship with the mating structure of the secondsubstrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.
摘要翻译： 一种制造微电子机械开关或隧道传感器的方法。 悬臂梁结构和配合结构被限定在第一衬底或晶片上的蚀刻停止层上;并且至少一个接触结构和配合结构被限定在第二衬底或晶片上，第二衬底或晶片上的配合结构为 与第一衬底或晶片上的配合结构形成互补形状。 在至少一个配合结构上提供结合层，优选共晶结合层。 第一衬底的配合结构移动到与二衬底或晶片的配合结构成面对关系。 在两个衬底之间施加压力，以便在键合或共晶层处的两个配合结构之间引起键合。 然后去除第一衬底或晶片和蚀刻停止层以释放悬臂梁结构以相对于第二衬底或晶片移动。
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公开(公告)号：EP1305256A2
公开(公告)日：2003-05-02
申请号：EP01959532.1
申请日：2001-07-31
IPC分类号： B81B1/00
CPC分类号： B81C1/0015 , B81B2201/0242 , B81C2201/014 , B81C2201/0191 , B81C2203/036 , G01C19/5656 , G01P15/0802 , G01P15/0894
摘要： A method of making a micro electro-mechanical gyroscope. A cantilevered beam structure, firstportions of side drive electrodes and a mating structure are defined on a first substrate or wafer;and at least one contact structure, second portions of the side drive electrodes and a matingstructure are defined on a second substrate or wafer, the mating structure on the second substrateor wafer being of a complementary shape to the mating structure on the first substrate or waferand the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The matingstructure of the first substrate is moved into a confronting relationship with the mating structureof the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and alsobetween the first and second portions of the side drive electrodes to cause a bond to occurtherebetween. Then the first substrate or wafer is removed to free the cantilevered beam structurefor movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.
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公开(公告)号：EP1352414A2
公开(公告)日：2003-10-15
申请号：EP01961782.8
申请日：2001-07-27
IPC分类号： H01L21/00
CPC分类号： H01H1/0036 , H01H59/0009
摘要： A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. At least one of the mating structures includes a protrusion extending from a major surface of at least one of said substrates. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.
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公开(公告)号：EP1305640A2
公开(公告)日：2003-05-02
申请号：EP01956027.5
申请日：2001-07-27
CPC分类号： B81C1/0015 , B81B2201/0292 , B81C2203/036 , H01H59/0009
摘要： A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beamstructure and a mating structure are defined on a first substrate or wafer; and at least one contactstructure and a mating structure are defined on a second substrate or wafer, the mating structureon the second substrate or wafer being of a complementary shape to the mating structure on thefirst substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into aconfronting relationship with the mating structure of the second substrate or wafer. Pressure isapplied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free thecantilevered beam structure for movement relative to the second substrate or wafer.
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公开(公告)号：EP1305570A2
公开(公告)日：2003-05-02
申请号：EP01959412.6
申请日：2001-07-30
CPC分类号： B81C3/002 , B81B2201/0242 , B81B2201/025 , B81C2201/019 , B81C2203/036 , B81C2203/058 , G01C19/5656 , G01P15/0802 , G01P15/0894 , G01P15/18 , G01P2015/084 , G01P2015/0842 , H01H1/0036 , H01H59/0009
摘要： A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beamstructures for at least two orthogonally arranged sensors and associated mating structures aredefined on a first substrate or wafer, the at least two orthogonally arranged sensors havingorthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is alsodefined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonatorstructure having a mating structure thereon. Contact structures for at least two orthogonallyarranged sensors are formed together with mating structures on a second substrate or wafer, themating structures on the second substrate or wafer being of a complementary shape to the matingstructures on the first substrate or wafer. The mating structures of the first substrate aredisposed in a confronting relationship with the mating structures of the second substrate orwafer. A eutectic bonding layer associated with one of the mating structures facilitates bondingbetween the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.
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