Abstract:
In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer (28) and a first sensor (30,32,34) that is positioned on a first side of the substrate layer, bonding a cap structure (24) over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer (131) over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor (124,126,128) is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.
Abstract:
Systems and methods for a micro-electromechanical system (MEMS) device are provided. In one embodiment, a system comprises a first outer layer and a first device layer comprising a first set of MEMS devices, wherein the first device layer is bonded to the first outer layer. The system also comprises a second outer layer and a second device layer comprising a second set of MEMS devices, wherein the second device layer is bonded to the second outer layer. Further, the system comprises a central layer having a first side and a second side opposite that of the first side, wherein the first side is bonded to the first device layer and the second side is bonded to the second device layer.
Abstract:
A MEMS sensor comprises a substrate and at least one proof mass having a first plurality of combs. The proof mass is coupled to the substrate via one or more suspension beams such that the proof mass and the first plurality of combs are movable. The MEMS sensor also comprises at least one anchor having a second plurality of combs. The anchor is coupled to the substrate such that the anchor and second plurality of combs are fixed in position relative to the substrate. The first plurality of combs are interleaved with the second plurality of combs. Each of the combs comprises a plurality of conductive layers electrically isolated from each other by one or more non-conductive layers. Each conductive layer is individually coupled to a respective electric potential such that capacitance between the combs varies approximately linearly with displacement of the movable combs in an out-of-plane direction.
Abstract:
An electronic device includes: an outline configuration including a first surface, a second surface facing opposite from the first surface, and a mounting surface coupled to the first and second surfaces; a first substrate including a first electrode; a second substrate including a second electrode; a resin disposed between the first and second substrates; and an electric element sealed with the resin and having an outline configuration of a polyhedron, the electric element being disposed such that a broadest surface of the polyhedron faces one of the first substrate and the second substrate. The first surface is one surface of the first substrate, the one surface being opposite from another surface of the first substrate on a side adjacent to the resin. The second surface is one surface of the second substrate, the one surface being opposite from another surface of the second substrate on a side adjacent to the resin. The mounting surface includes: an exposed surface of the resin between the first and second substrates, and side surfaces of the first and second substrates adjacent to the exposed surface. The first electrode is disposed at an end of the first surface adjacent to the mounting surface and electrically coupled to the electric element. The second electrode is disposed at an end of the second surface adjacent to the mounting surface and electrically coupled to the electric element.
Abstract:
An inertial sensor includes oscillating-type angular velocity sensing element (32), IC (34) for processing signals supplied from angular velocity sensing element (32), capacitor (36) for processing signals, and package (38) for accommodating angular velocity sensing element (32), IC (34), capacitor (36). Element (32) and IC (34) are housed in package (38) via a vibration isolator, which is formed of TAB tape (46), plate (40) on which IC (34) is placed, where angular velocity sensing element (32) is layered on IC (34), and outer frame (44) placed outside and separately from plate (40) and yet coupled to plate (40) via wiring pattern (42).
Abstract:
A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.
Abstract:
The resolution and the signal-to-noise ration of known force sensors as e.g. capacitive force sensors decrease when scaling them down. To solve this problem there is a solution presented by the usage of a nanostructure as e.g. a carbo nanotube, which is mechanically deformed by a force to be measured. The proposed force sensors comprises a support with two arms carrying the carbon nanotube. The main advantage of this force sensor is a very high sensitivity as the conductance of carbon nanotubes changes several orders of magnitude when a mechanical deformation arises.
Abstract:
A method for making a subsurface electrical contact (34) on a micro-electrical-mechanical-systems (MEMS) device (10). The contact (34) is formed by depositing a layer of polycrystalline silicon (34) onto a surface (16) within a cavity (20) buried under a device silicon layer (24). The polycrystalline silicon layer (34) is deposited in the cavity (20) through holes (30 and 32) etched through the device silicon (24) and reseals the cavity (20) during the polycrystalline silicon deposition step. The polycrystalline silicon layer (24) can then be masked and etched, or etched back to expose the device layer (24) of the micromachined device (10). Through the layer of polycrystalline silicon (34), a center hub (18) of the device (10) may be electrically contacted.