公开(公告)号：EP0706221B8

公开(公告)日：2008-09-03

申请号：EP95307054.7

申请日：1995-10-04

申请人： Hitachi, Ltd. ,  HITACHI HARAMACHI ELECTRONICS CO., LTD.

发明人： Yamada, Kazuji ,  Tanaka, Akira ,  Saito, Ryuichi ,  Kurihara, Yasutoshi ,  Kushima, Tadao ,  Haramaki, Takashi ,  Koike, Yoshihiko ,  Hosokawa, Takashi ,  Sawahata, Mamoru ,  Koizumi, Masahiro ,  Onuki, Jin ,  Suzuki, Kazuhiro ,  Kobayashi, Isao ,  Shimizu, Hideo ,  Higashimura, Yutaka ,  Sekine, Shigeki ,  Koike, Nobuya ,  Kokubun, Hideya

IPC分类号： H01L25/07 ,  H01L23/495 ,  H01L23/373

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes (15a,15b,17,18,19) of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base (13), the upper surface of the heat dissipating base being covered with a member (12) for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

公开(公告)号：EP0706221A3

公开(公告)日：1997-11-05

申请号：EP95307054.7

申请日：1995-10-04

申请人： HITACHI, LTD. ,  HITACHI HARAMACHI ELECTRONICS CO., LTD.

发明人： Yamada, Kazuji ,  Tanaka, Akira ,  Saito, Ryuichi ,  Kurihara, Yasutoshi ,  Kushima, Tadao ,  Haramaki, Takashi ,  Koike, Yoshihiko ,  Hosokawa, Takashi ,  Sawahata, Mamoru ,  Koizumi, Masahiro ,  Onuki, Jin ,  Suzuki, Kazuhiro ,  Kobayashi, Isao ,  Shimizu, Hideo ,  Higashimura, Yutaka ,  Sekine, Shigeki ,  Koike, Nobuya ,  Kokubun, Hideya

IPC分类号： H01L25/07 ,  H01L23/495

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes (15a,15b,17,18,19) of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base (13), the upper surface of the heat dissipating base being covered with a member (12) for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

公开(公告)号：EP0706221B1

公开(公告)日：2008-06-25

申请号：EP95307054.7

申请日：1995-10-04

申请人： Hitachi, Ltd. ,  HITACHI HARAMACHI ELECTRONICS CO., LTD.

发明人： Yamada, Kazuji ,  Tanaka, Akira ,  Saito, Ryuichi ,  Kurihara, Yasutoshi ,  Kushima, Tadao ,  Haramaki, Takashi ,  Koike, Yoshihiko ,  Hosokawa, Takashi ,  Sawahata, Mamoru ,  Koizumi, Masahiro ,  Onuki, Jin ,  Suzuki, Kazuhiro ,  Kobayashi, Isao ,  Shimizu, Hideo ,  Higashimura, Yutaka ,  Sekine, Shigeki ,  Koike, Nobuya ,  Kokubun, Hideya

IPC分类号： H01L25/07 ,  H01L23/495 ,  H01L23/373

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes (15a,15b,17,18,19) of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base (13), the upper surface of the heat dissipating base being covered with a member (12) for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，每个电极（15a，15b，17,18,19） 半导体元件电连接到所述电极图案，所述绝缘体基板的另一个表面被接合到散热基座（13），所述散热基座的上表面被用于切断所述半导体元件的构件（12）覆盖 在外部环境中，设置电连接绝缘体基板上的电极的端子和设置在切断部件外部的电极，其中散热基体的材料具有大于半导体元件的线膨胀系数的线膨胀系数，并且更小 比半导体元件的线膨胀系数的三倍以及导热系数Ia 超过100W / mK，半导体元件布置在绝缘体基板上的至少一个电极表面和至少两个被另一个电极表面分隔的区域中。

公开(公告)号：EP0706221A2

公开(公告)日：1996-04-10

申请号：EP95307054.7

申请日：1995-10-04

申请人： HITACHI, LTD. ,  HITACHI HARAMACHI ELECTRONICS CO., LTD.

发明人： Yamada, Kazuji ,  Tanaka, Akira ,  Saito, Ryuichi ,  Kurihara, Yasutoshi ,  Kushima, Tadao ,  Haramaki, Takashi ,  Koike, Yoshihiko ,  Hosokawa, Takashi ,  Sawahata, Mamoru ,  Koizumi, Masahiro ,  Onuki, Jin ,  Suzuki, Kazuhiro ,  Kobayashi, Isao ,  Shimizu, Hideo ,  Higashimura, Yutaka ,  Sekine, Shigeki ,  Koike, Nobuya ,  Kokubun, Hideya

IPC分类号： H01L25/07 ,  H01L23/495

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes (15a,15b,17,18,19) of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base (13), the upper surface of the heat dissipating base being covered with a member (12) for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

公开(公告)号：EP0051459B1

公开(公告)日：1986-01-22

申请号：EP81305142.2

申请日：1981-10-29

申请人： Hitachi, Ltd.

发明人： Wakui, Yoko ,  Hachino, Hiroaki ,  Sawahata, Mamoru ,  Soga, Tasao ,  Yasuda, Tomio ,  Ooue, Michio

IPC分类号： H01L23/48 ,  H01L21/60 ,  H01L29/74

CPC分类号： H01L23/5227 ,  H01L23/145 ,  H01L23/4824 ,  H01L23/4985 ,  H01L24/05 ,  H01L24/50 ,  H01L2224/04042 ,  H01L2224/49107 ,  H01L2224/4911 ,  H01L2224/73269 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00

公开(公告)号：EP0587305A3

公开(公告)日：1994-03-30

申请号：EP93306233.3

申请日：1993-08-06

申请人： HITACHI, LTD.

发明人： Inoue, Hirokazu ,  Takasaka, Masahiro ,  Watanabe, Koichi ,  Hosokawa, Takashi ,  Sawahata, Mamoru

IPC分类号： H01L21/58

CPC分类号： H01L24/98 ,  B23K2203/42 ,  B23K2203/50 ,  H01L24/799 ,  H01L24/83 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/45144 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/19043 ,  H05K3/225 ,  H05K13/0486 ,  Y10S156/922 ,  Y10T29/49721 ,  Y10T29/53274 ,  Y10T156/11 ,  H01L2924/00

摘要： In a method of removing a component (1) from a wiring board (4) to which the component is attached by heat-softenable resin (3), the improvement is provided of, after softening of the resin by heat and removal of the component (1), removing residual resin remaining on the board at the location of the component by application of ultraviolet laser radiation having intensity sufficient to decompose and disperse said residual resin. This can be done without damaging the wiring on the board so that the wiring is re-usable to attach a further electronic component at the same location. Excessive heating of the board can be avoided by measures such as applying a pre-load to the component during softening so that it moves when sufficiently softened, and monitoring the softening.

摘要翻译： 在通过热软化性树脂（3）从配线基板（4）上去除部件（1）的方法中，改进之处在于，在通过加热软化树脂并去除部件 （1）中，通过施加足以分解和分散所述残余树脂的强度的紫外线激光辐射，去除在部件位置处残留在板上的残留树脂。 这可以在不损坏电路板上的接线的情况下完成，以便接线可以重新用于在相同的位置连接更多的电子元件。 可以通过诸如在软化期间对部件施加预加载以使其在充分软化时移动并且监测软化的措施来避免板的过度加热。

公开(公告)号：EP0062289A2

公开(公告)日：1982-10-13

申请号：EP82102685.3

申请日：1982-03-30

申请人： Hitachi, Ltd.

发明人： Fuyama, Moriaki ,  Tamura, Katsumi ,  Morijiri, Makoto ,  Sawahata, Mamoru ,  Hachino, Hiroaki

IPC分类号： G02F1/133 ,  B23K35/00

CPC分类号： B23K35/001 ,  G02F1/13439 ,  G02F1/1345 ,  H01J2211/225 ,  H01L31/1884 ,  H05K3/24 ,  H05K2201/0326 ,  Y02E10/50

摘要： A display panel includes a pair of substrates (11, 12) arranged face to face with each other with a predetermined gap therebetween, at least a pair of electrodes each provided on a corresponding one of facing surfaces of the substrates, and a display substance (3) provided between the electrodes. A picture element (40) is made up of a pair of facing portions of the electrodes and a portion of the display substance (3) situated between the facing portions. At least one of the electrodes is made up of a multiplicity of picture element electrodes (40) formed of a transparent conductive film (14) and juxtaposed to each other and a contact metal member (20) for substantially making an electrical connection of a plurality of ones of the picture element electrodes (40). The contact metal member (20) is made up of a first layer (21) made of chromium or a chromium alloy and a second layer (22) formed on the first layer and made of nickel or gold.

摘要翻译： 一种显示面板包括：一对基板（11,12），它们以预定的间隙彼此面对面地设置;至少一对电极，各自设置在基板的相对的一个相对表面上;以及显示物质（ 3）设置在电极之间。 图像元件（40）由电极的一对面对部分和位于面对部分之间的显示物质（3）的一部分组成。 至少一个电极由多个由透明导电膜（14）形成并且彼此并置的像素电极（40）和用于基本上形成多个电连接的接触金属构件（20）组成， 像素电极（40）中的一个。 接触金属件（20）由铬或铬合金制成的第一层（21）和形成在第一层上并由镍或金制成的第二层（22）构成。

公开(公告)号：EP0932201A3

公开(公告)日：2000-03-22

申请号：EP99100944.0

申请日：1999-01-20

申请人： Hitachi, Ltd.

发明人： Kodama, Hironori ,  Katou, Mitsuo ,  Sawahata, Mamoru

IPC分类号： H01L23/48 ,  H01L23/051

CPC分类号： H01L24/72 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： In accordance with a press contact type semiconductor device, a metallic body 6 having macroscopic vacancies in its portion is arranged between a main electrode of the semiconductor device and a main electrode plate 5, or between an intermediate electrode plate 3 arranged on a main plain of the semiconductor element 1 and a main electrode plate 5, respectively.

公开(公告)号：EP0932201A2

公开(公告)日：1999-07-28

申请号：EP99100944.0

申请日：1999-01-20

申请人： Hitachi, Ltd.

发明人： Kodama, Hironori ,  Katou, Mitsuo ,  Sawahata, Mamoru

IPC分类号： H01L23/48 ,  H01L23/051

CPC分类号： H01L24/72 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： In accordance with a press contact type semiconductor device, a metallic body 6 having macroscopic vacancies in its portion is arranged between a main electrode of the semiconductor device and a main electrode plate 5, or between an intermediate electrode plate 3 arranged on a main plain of the semiconductor element 1 and a main electrode plate 5, respectively.

摘要翻译： 根据压接型半导体器件，在半导体器件的主电极和主电极板5之间或在布置在主平面的主平面上的中间电极板3之间布置有在其部分中具有宏观空位的金属体6 半导体元件1和主电极板5。

公开(公告)号：EP0587305A2

公开(公告)日：1994-03-16

申请号：EP93306233.3

申请日：1993-08-06

申请人： HITACHI, LTD.

发明人： Inoue, Hirokazu ,  Takasaka, Masahiro ,  Watanabe, Koichi ,  Hosokawa, Takashi ,  Sawahata, Mamoru

IPC分类号： H01L21/58

CPC分类号： H01L24/98 ,  B23K2203/42 ,  B23K2203/50 ,  H01L24/799 ,  H01L24/83 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/45144 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/19043 ,  H05K3/225 ,  H05K13/0486 ,  Y10S156/922 ,  Y10T29/49721 ,  Y10T29/53274 ,  Y10T156/11 ,  H01L2924/00

摘要： In a method of removing a component (1) from a wiring board (4) to which the component is attached by heat-softenable resin (3), the improvement is provided of, after softening of the resin by heat and removal of the component (1), removing residual resin remaining on the board at the location of the component by application of ultraviolet laser radiation having intensity sufficient to decompose and disperse said residual resin. This can be done without damaging the wiring on the board so that the wiring is re-usable to attach a further electronic component at the same location. Excessive heating of the board can be avoided by measures such as applying a pre-load to the component during softening so that it moves when sufficiently softened, and monitoring the softening.

摘要翻译： 在通过可热软化树脂（3）将组分附着到的布线板（4）中除去组分（1）的方法中，通过加热使树脂软化并除去组分 （1），通过施加足以分解和分散所述残留树脂的强度的紫外线激光辐射，除去在所述部件位置处残留在所述板上的剩余树脂。 这可以在不损坏电路板上的布线的情况下进行，使得布线可重复地可以在另一个位置附接另外的电子部件。 可以通过诸如在软化期间对组分施加预加载以使其在充分软化时移动并监测软化的措施来避免板的过热。