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1.METHOD FOR FORMING SUSPENDED TRANSMISSION LINE STRUCTURES IN BACK END OF LINE PROCESSING 审中-公开
Title translation: 方法悬空传输线结构在后卫线上END加工成型公开(公告)号:EP1756862A4
公开(公告)日:2011-03-02
申请号:EP05741890
申请日:2005-04-28
Applicant: IBM
Inventor: CHINTHAKINDI ANIL K , GROVES ROBERT A , TRETIAKOV YOURI V , VAED KUNAL , VOLANT RICHARD P
IPC: H01L23/522 , H01L21/4763 , H01L21/768 , H01L23/532 , H01P11/00
CPC classification number: H01P11/003 , H01L21/7682 , H01L21/76838 , H01L23/5222 , H01L23/5225 , H01L23/53238 , H01L2223/6622 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/3011 , H01L2924/00
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2.THIN FILM RESISTORS WITH CURRENT DENSITY ENHANCING LAYER (CDEL) 有权
Title translation: 的电流密度的增强层的薄膜电阻器(CDEL)公开(公告)号:EP1849167A4
公开(公告)日:2010-06-09
申请号:EP06720491
申请日:2006-02-08
Applicant: IBM
Inventor: CHINTHAKINDI ANIL K , ESHUN EBENEZER E
IPC: H01C1/012 , H01L21/02 , H01L23/522 , H01L27/06
CPC classification number: H01L28/24 , H01C7/006 , H01L23/5228 , H01L27/0629 , H01L27/0688 , H01L2924/0002 , H01L2924/00
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3.FEOL/MEOL METAL RESISTOR FOR HIGH END CMOS 审中-公开
Title translation: FEOL / MEOL-METALLWIDERSTANDFÜR高端CMOS公开(公告)号:EP1794778A4
公开(公告)日:2009-06-03
申请号:EP05779566
申请日:2005-08-04
Applicant: IBM
Inventor: CHINTHAKINDI ANIL K , COOLBAUGH DOUGLAS D , RAMACHANDRAN VIDHYA , RASSEL ROBERT M
IPC: H01L21/20
CPC classification number: H01L28/24 , H01L27/0629 , H01L29/7833
Abstract: A FEOL/MEOL metal resistor (32) that has tight sheet resistance tolerance (on the order of about 5% or less), high current density (on the order of about 0.5 mA/micron or greater), lower parasitics than diffused resistors and lower TCR than standard BEOL metal resistors as well as various methods of integrating such a metal resistor structure (32) into a CMOS technology are provided.
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