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1.发明公开METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURRENT IMPROVEMENT FOR HIGH-K METAL GATE TRANSISTORS 审中-公开方法与结构新兴力量管理和控制电源优化中具有高介电常数金属栅极晶体管
公开(公告)号：EP2415073A4
公开(公告)日：2013-09-11
申请号：EP10759255
申请日：2010-03-29
Applicant: IBM
Inventor： BU HUIMING , CHUDZIK MICHAEL P , HE WEI , JHA RASHMI , KIM YOUNG-HEE , KRISHNAN SIDDARTH A , MO RENEE T , MOUMEN NAIM , NATZLE WESLEY C
IPC: H01L29/51 , H01L21/28 , H01L21/336 , H01L29/49
CPC classification number: H01L21/28202 , H01L21/28176 , H01L21/28185 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L2924/0002 , H01L2924/00
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2.发明公开USING METAL/METAL NITRIDE BILAYERS AS GATE ELECTRODES IN SELF-ALIGNED AGGRESSIVELY SCALED CMOS DEVICES 有权金属/金属氮化物双层AS栅极电极的自对准AGGRESSIVE缩放CMOS组件使用
公开(公告)号：EP1872407A4
公开(公告)日：2011-09-14
申请号：EP06750529
申请日：2006-04-18
Applicant: IBM
Inventor： CARTIER EDUARD A , COPEL MATTHEW W , DORIS BRUCE B , JAMMY RAJARAO , KIM YOUNG-HEE , LINDER BARRY P , NARAYANAN VIJAY , PARUCHURI VAMSI K , WONG KEITH KWONG HON
IPC: H01L21/84 , H01L21/8238 , H01L27/092
CPC classification number: H01L21/823842
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