Patent search ap:("IBM") AND inv:"COPEL MATTHEW W" Page 1

1.

发明公开
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOLTAGE CONTROL IN CMOS DEVICE FABRICATION WITH HIGH K DIELECTRICS 有权
Title translation: 层层壁垒的选择性实施旨在实现阈值电压控制在CMOS元件具有高K电介质的生产

公开(公告)号：EP1766691A4

公开(公告)日：2011-06-29

申请号：EP05732384

申请日：2005-03-30

Applicant: IBM

Inventor： BOJARCZUK NESTOR A JR , CABRAL CYRIL JR , CARTIER EDUARD A , COPEL MATTHEW W , FRANK MARTIN M , GOUSEV EVGENI P , GUHA SUPRATIK , JAMMY RAJARAO , NARAYANAN VIJAY , PARUCHURI VAMSI K

IPC: H01L31/113 , H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/51 , H01L31/119

CPC classification number: H01L29/513 , H01L21/28079 , H01L21/28088 , H01L21/823857 , H01L29/495 , H01L29/4966 , H01L29/517

2.

发明公开
LOW THRESHOLD VOLTAGE SEMICONDUCTOR DEVICE WITH DUAL THRESHOLD VOLTAGE CONTROL MEANS 审中-公开
Title translation: 用双阈值电压控制装置低阈值电压半导体部件

公开(公告)号：EP1949447A4

公开(公告)日：2009-11-11

申请号：EP06825854

申请日：2006-10-12

Applicant: IBM

Inventor： CARTER EDUARD A , COPEL MATTHEW W , FRANK MARTIN M , GOUSEV EVGENI P , JAMISON PAUL C , JAMMY RAJARAO , LINDER BARRY P , NARAYANAN VIJAY

IPC: H01L29/51 , H01L21/28 , H01L29/10 , H01L29/78

CPC classification number: H01L29/513 , H01L21/28194 , H01L21/28238 , H01L21/823807 , H01L29/105 , H01L29/1083 , H01L29/517 , H01L29/518 , H01L29/6659 , H01L29/7833

3.

发明公开
USING METAL/METAL NITRIDE BILAYERS AS GATE ELECTRODES IN SELF-ALIGNED AGGRESSIVELY SCALED CMOS DEVICES 有权
Title translation: 金属/金属氮化物双层AS栅极电极的自对准AGGRESSIVE缩放CMOS组件使用

公开(公告)号：EP1872407A4

公开(公告)日：2011-09-14

申请号：EP06750529

申请日：2006-04-18

Applicant: IBM

Inventor： CARTIER EDUARD A , COPEL MATTHEW W , DORIS BRUCE B , JAMMY RAJARAO , KIM YOUNG-HEE , LINDER BARRY P , NARAYANAN VIJAY , PARUCHURI VAMSI K , WONG KEITH KWONG HON

IPC: H01L21/84 , H01L21/8238 , H01L27/092

CPC classification number: H01L21/823842

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