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1.发明公开BIPOLAR TRANSISTOR HAVING RAISED EXTRINSIC BASE WITH SELECTABLE SELF-ALIGNMENT AND METHODS OF FORMING SAME 审中-公开双极增加了与可选择的自对准和过程的外在基地用于生产
公开(公告)号：EP1658639A4
公开(公告)日：2009-09-30
申请号：EP04777467
申请日：2004-07-01
Applicant: IBM
Inventor： KHATER MARWAN H , DUNN JAMES S , HARAME DAVID L , JOSEPH ALVIN J , LIU QIZHI , PAGETTE FRANCOIS , ST ONGE STEPHEN A , STRICKER ANDREAS D
IPC: H01L29/732 , H01L21/331 , H01L29/10 , H01L29/737
CPC classification number: H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
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公开(公告)号：EP1644973A4
公开(公告)日：2009-03-04
申请号：EP04755817
申请日：2004-06-22
Applicant: IBM
Inventor： JOSEPH ALVIN J , LIU QIZHI
IPC: H01L21/8222 , H01L21/331 , H01L21/8249 , H01L27/06 , H01L27/082 , H01L29/10 , H01L29/732
CPC classification number: H01L29/66287 , H01L21/8249 , H01L27/0623 , H01L29/1004 , H01L29/732
Abstract: A high fT and fmax bipolar transistor (100) includes an emitter (104), a base (120), and a collector (116). The emitter has a lower portion (108) and an upper portion (1.12) that extends beyond the lower portion. The base includes an intrinsic base (140) and an extrinsic base (144). The intrinsic base is located between the lower portion of the emitter and the collector. The extrinsic base extends from the lower portion of the emitter beyond the upper portion of the emitter and includes a continuous conductor (148) that extends from underneath the upper portion of the emitter and out from underneath the upper portion of the emitter. The continuous conductor provides a low electrical resistance path from a base contact (not shown) to the intrinsic base. The transistor may include a second conductor (152) that does not extend underneath the upper portion of the emitter, but which further reduces the electrical resistance through the extrinsic base.
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3.发明公开LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME 审中-公开返回通路生产低电阻和低电感和过程
公开(公告)号：EP1979932A4
公开(公告)日：2012-03-14
申请号：EP07710130
申请日：2007-01-15
Applicant: IBM
Inventor： ERTURK METE , GROVES ROBERT A , JOHNSON JEFFREY B , JOSEPH ALVIN J , LIU QIZHI , SPROGIS EDMUND J , STAMPER ANTHONY K
IPC: H01L21/77 , H01L21/302 , H01L21/306 , H01L21/768 , H01L23/48
CPC classification number: H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
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公开(公告)号：EP1794806A4
公开(公告)日：2011-06-29
申请号：EP05798479
申请日：2005-09-20
Applicant: IBM
Inventor： GEISS PETER J , GRAY PETER B , JOSEPH ALVIN J , LIU QIZHI
IPC: H01L31/072
CPC classification number: H01L29/0821 , H01L21/8249 , H01L27/0623 , H01L29/66242 , H01L29/66318
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