公开(公告)号：EP2168163A4

公开(公告)日：2012-08-01

申请号：EP08771894

申请日：2008-06-25

Applicant: IBM

Inventor： ESHUN EBENEZER E ,  JOHNSON JEFFREY B ,  PHELPS RICHARD A ,  RASSEL ROBERT M ,  ZIERAK MICHAEL L

IPC: H01L29/808 ,  H01L21/337 ,  H01L29/36

CPC classification number: H01L29/808 ,  H01L27/0617 ,  H01L27/098 ,  H01L29/36 ,  H01L29/66901

公开(公告)号：EP1979932A4

公开(公告)日：2012-03-14

申请号：EP07710130

申请日：2007-01-15

Applicant: IBM

Inventor： ERTURK METE ,  GROVES ROBERT A ,  JOHNSON JEFFREY B ,  JOSEPH ALVIN J ,  LIU QIZHI ,  SPROGIS EDMUND J ,  STAMPER ANTHONY K

IPC: H01L21/77 ,  H01L21/302 ,  H01L21/306 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1839340A4

公开(公告)日：2009-09-09

申请号：EP05855611

申请日：2005-12-22

Applicant: IBM

Inventor： COOLBAUGH DOUGLAS D ,  FURKAY STEPHEN S ,  JOHNSON JEFFREY B ,  RASSEL ROBERT M

IPC: H01L21/20 ,  H01L29/93

CPC classification number: H01L29/93

Abstract: A semiconductor structure comprising a hyperabrupt junction varactor with a compensated cathode contact as well as a method of fabricating the same are disclosed. The method includes a single implant mask which is used in forming the subcollector/cathode, collector/well and hyperabrupt junction.