-
公开(公告)号：EP2409333B1
公开(公告)日：2018-06-06
申请号：EP10753854.8
申请日：2010-03-02
申请人： Intel Corporation
IPC分类号： H01L29/78
CPC分类号： H01L29/66977 , H01L29/1083 , H01L29/161 , H01L29/365 , H01L29/66431 , H01L29/66439 , H01L29/7781
摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodimentsmay be described and claimed.
-
2.发明公开APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTUM WELL DEVICE 有权设备和方法改进的平行线在量子托架设备
公开(公告)号：EP2409333A2
公开(公告)日：2012-01-25
申请号：EP10753854.8
申请日：2010-03-02
申请人： Intel Corporation
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66977 , H01L29/1083 , H01L29/161 , H01L29/365 , H01L29/66431 , H01L29/66439 , H01L29/7781
摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
-
3.发明公开APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTUM WELL DEVICE 审中-公开用于改善量子阱器件中的并联电感的装置和方法
公开(公告)号：EP3273484A1
公开(公告)日：2018-01-24
申请号：EP17188513.0
申请日：2010-03-02
申请人： INTEL Corporation
IPC分类号： H01L29/778 , H01L21/335 , H01L29/10 , H01L29/78
摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodimentsmay be described and claimed.
摘要翻译： 本文总体上描述了提供用于改善的并联传导的量子阱器件的设备和方法的实施例。 其他实施例可以被描述和要求保护。
-
4.发明公开QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS 审中-公开具有金属量子MULDEN MOSFET渠道BY的源极漏极引起单轴拉伸和的源极漏极与兼容再生
公开(公告)号：EP2382652A2
公开(公告)日：2011-11-02
申请号：EP09837050.5
申请日：2009-12-23
申请人： Intel Corporation
发明人： HUDAIT, Mantu , PILLARISETTY, Ravi , RADOSAVLJEVIC, Marko , DEWY, Gilbert , RAKSHIT, Titash , KAVALIEROS, Jack , TSAI, Wilman , MAJHI, Prashant
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/66431 , H01L21/28518 , H01L21/76802 , H01L21/76805 , H01L21/76897 , H01L29/152 , H01L29/165 , H01L29/41766 , H01L29/517 , H01L29/66462 , H01L29/7783 , H01L29/7848 , H01L29/802
摘要： Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
-
公开(公告)号：EP3273484B1
公开(公告)日：2019-10-02
申请号：EP17188513.0
申请日：2010-03-02
申请人： INTEL Corporation
IPC分类号： H01L29/778 , H01L21/335 , H01L29/10 , H01L29/78
-
6.发明公开MODULATION-DOPED HALO IN QUANTUM WELL FIELD-EFFECT TRANSISTORS, APPARATUS MADE THEREWITH, AND METHODS OF USING SAME 审中-公开调制掺杂晕量子SHIFT-FELDEFFEKTTRANISTOREN使生产装置和使用及其方法
公开(公告)号：EP2399283A2
公开(公告)日：2011-12-28
申请号：EP10744109.9
申请日：2010-01-26
申请人： Intel Corporation
发明人： PILLARISETTY, Ravi , RAKSHIT, Titash , HUDAIT, Mantu , RADOSAVLJEVIC, Marko , DEWEY, Gilbert , CHU-KUNG, Benjamin
IPC分类号： H01L21/336 , H01L29/78 , H01L21/265
CPC分类号： H01L29/122 , B82Y10/00 , H01L29/045 , H01L29/205 , H01L29/207 , H01L29/4236 , H01L29/51 , H01L29/66462 , H01L29/7785
摘要： A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device includes InGaAs bottom and top barrier layers respectively below and above the QW layer. The semiconductive device also includes a high-k gate dielectric layer that sits on the InP spacer first layer in a gate recess. A process of forming the QW layer includes using an off-cut semiconductive substrate.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.01 秒)
