An optical ray deflection apparatus
    2.
    发明公开
    An optical ray deflection apparatus 失效
    光偏转。

    公开(公告)号:EP0040302A2

    公开(公告)日:1981-11-25

    申请号:EP81101824.1

    申请日:1981-03-12

    IPC分类号: G02B26/10 G02F1/29

    摘要: Torsional type optical ray deflection apparatus comprises a pair of etched plates (10, 20), one ofthe plates (20) is made of single crystal semiconductor material such as silicon, and the other plate (10) is of a suitable-insulating material such as glass. The semiconductor plate (20) is etched to form an elongated bar (22, 30,24) of the material having a wider central portion (30) which forms a reflecting surface armature of suitable area suspended internally of the rectangular frame formed by the remainder of the semiconductor plate. The insulating plate (10) is etched to leave an annuloidal depression (12) centrally ofthe plate. An elongated land in the centre of the insulating plate underlies the reflecting surface area (30) to support the torsion bar-reflector structure in the direction normal to the longitudinal axis while allowing rotation about that axis. Planar electrodes (14,16) are laid down in the bottom of the depression in the insulating plate for exerting an electrostatic force between one of the electrodes and the semiconductor armature, thereby causing angular displacement about the longitudinal axis of the torsion bar which will deflect rays of light incident to the reflecting surface portion.

    Capacitive pressure transducers and methods of fabricating them
    5.
    发明公开
    Capacitive pressure transducers and methods of fabricating them 失效
    Kapazitive Druckwandler und Verfahren zu ihrer Herstellung。

    公开(公告)号:EP0049344A2

    公开(公告)日:1982-04-14

    申请号:EP81106255.3

    申请日:1981-08-11

    IPC分类号: G01L9/00 G01L9/12 H01L29/84

    CPC分类号: G01L9/0073

    摘要: A capacitive pressure transducer comprises an electrically conductive diaphragm (24) of semiconductor material surrounded and supported by a body (20,26) of semiconductor material and a perforated metallic membrane supported by the semiconductor body so that there is a hollow (46) between the diaphragm and the membrane. The diaphragm and the membrane respectively serve as the movable plate and the fixed plate of a capacitor, the capacitance of which varies in dependence on the pressures on opposite sides of the diaphragm. The transducer can be made by normal integrated circuit device fabrication steps and so the transducer and utilization circuitry can be fabricated in the same process into a single integrated semiconductor device.

    摘要翻译: 电容式压力换能器包括由半导体材料的主体(20,26)包围和支撑的半导体材料的导电隔膜(24),以及由半导体主体支撑的穿孔的金属膜,使得在 隔膜和膜。 隔膜和膜分别用作可移动板和电容器的固定板,其电容根据隔膜相对侧的压力而变化。 传感器可以通过正常的集成电路器件制造步骤制造,因此传感器和利用电路可以以相同的工艺制造成单个集成半导体器件。