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公开(公告)号：EP2301990A1
公开(公告)日：2011-03-30
申请号：EP09794549.7
申请日：2009-07-09
申请人： Japan Science And Technology Agency , National University Corporation Kanazawa University , JSR Corporation
CPC分类号： C08G77/60 , C07F7/0896
摘要： A polymer production process comprising reacting a compound represented by the following formula (1) in the presence of a binuclear metal complex represented by the following formula (2).
R 4-n MH n (1)
(in the formula (1), R is a monovalent organic group, M is a silicon atom or a germanium atom, and n is 2 or 3.)
[CpM(µ-CH 2 )] 2 (2)
(in the formula (2), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)摘要翻译： 一种聚合物制备方法，包括在下式（2）表示的双核金属络合物的存在下使由下式（1）表示的化合物反应。 ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR4-n MH n€ƒ€ƒ€ƒ（1）（在公式（1）中，R是一价有机组，M 是硅原子或锗原子，n为2或3.）€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[CpM（μ-CH 2）] 2€ƒ€ƒ€ƒ€ ƒƒ（2）（式（2）中，Cp为环戊二烯基配体，M为选自Rh和Ir的金属原子，M之间的键为双键。
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公开(公告)号：EP2301991A1
公开(公告)日：2011-03-30
申请号：EP09794550.5
申请日：2009-07-09
申请人： Japan Science And Technology Agency , National University Corporation Kanazawa University , JSR Corporation
CPC分类号： C08G77/60
摘要： A polysilane production process comprising reacting a specific silane compound typified by a cyclic silane compound represented by the following formula (2) in the presence of a binuclear metal complex represented by the following formula (4).
Si j H 2j (2)
(in the formula (2), j is an integer of 3 to 10.)
[CpM(µ-CH 2 )] 2 (4)
(in the formula (4), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)摘要翻译： 一种聚硅烷的制造方法，其特征在于，在下述式（4）所示的双核金属络合物的存在下，使以下述式（2）表示的环状硅烷化合物为代表的特定硅烷化合物反应。 （式（2）中，j为3〜10的整数。）[式（4）中，C p为环戊二烯基系配体， M是选自Rh和Ir的金属原子，并且M之间的键是双键。）
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3.发明公开CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD 有权DEVICE辐射带电粒子薄膜形成法，纠错方式和方法，用于制造器件
公开(公告)号：EP2624279A1
公开(公告)日：2013-08-07
申请号：EP11828920.6
申请日：2011-09-22
IPC分类号： H01J37/305 , H01J37/30 , H01J37/317
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
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4.发明授权CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD 有权DEVICE辐射带电粒子薄膜形成法，纠错方式和方法，用于制造器件
公开(公告)号：EP2624279B1
公开(公告)日：2017-04-05
申请号：EP11828920.6
申请日：2011-09-22
IPC分类号： H01J37/305 , H01J37/30 , H01J37/317 , C23C16/04 , C23C16/24 , C23C16/32 , C23C16/40 , C23C16/42 , C23C16/48 , C23C16/56 , H01L21/02 , H01L21/28 , H01L21/66 , H01L29/66
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
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