公开(公告)号：EP2301990A1

公开(公告)日：2011-03-30

申请号：EP09794549.7

申请日：2009-07-09

申请人： Japan Science And Technology Agency ,  National University Corporation Kanazawa University ,  JSR Corporation

发明人： SHIMODA, Tatsuya ,  KAWAJIRI, Ryo ,  ISOBE, Kiyoshi ,  NAKAI, Hidetaka ,  MATSUKI, Yasuo

IPC分类号： C08G77/60 ,  C08G77/08 ,  C08G79/00

CPC分类号： C08G77/60 ,  C07F7/0896

摘要： A polymer production process comprising reacting a compound represented by the following formula (1) in the presence of a binuclear metal complex represented by the following formula (2).

        R 4-n MH n      (1)

(in the formula (1), R is a monovalent organic group, M is a silicon atom or a germanium atom, and n is 2 or 3.)

        [CpM(µ-CH 2 )] 2      (2)

(in the formula (2), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)

摘要翻译： 一种聚合物制备方法，包括在下式（2）表示的双核金属络​​合物的存在下使由下式（1）表示的化合物反应。 ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR4-n MH n€ƒ€ƒ€ƒ（1）（在公式（1）中，R是一价有机组，M 是硅原子或锗原子，n为2或3.）€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[CpM（μ-CH 2）] 2€ƒ€ƒ€ƒ€ ƒƒ（2）（式（2）中，Cp为环戊二烯基配体，M为选自Rh和Ir的金属原子，M之间的键为双键。

公开(公告)号：EP2301991A1

公开(公告)日：2011-03-30

申请号：EP09794550.5

申请日：2009-07-09

申请人： Japan Science And Technology Agency ,  National University Corporation Kanazawa University ,  JSR Corporation

发明人： SHIMODA, Tatsuya ,  KAWAJIRI, Ryo ,  ISOBE, Kiyoshi ,  NAKAI, Hidetaka ,  MATSUKI, Yasuo

IPC分类号： C08G77/60 ,  C08G77/08

CPC分类号： C08G77/60

摘要： A polysilane production process comprising reacting a specific silane compound typified by a cyclic silane compound represented by the following formula (2) in the presence of a binuclear metal complex represented by the following formula (4).

        Si j H 2j      (2)

(in the formula (2), j is an integer of 3 to 10.)

        [CpM(µ-CH 2 )] 2      (4)

(in the formula (4), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)

摘要翻译： 一种聚硅烷的制造方法，其特征在于，在下述式（4）所示的双核金属络​​合物的存在下，使以下述式（2）表示的环状硅烷化合物为代表的特定硅烷化合物反应。 （式（2）中，j为3〜10的整数。）[式（4）中，C p为环戊二烯基系配体， M是选自Rh和Ir的金属原子，并且M之间的键是双键。）

公开(公告)号：EP2624279B1

公开(公告)日：2017-04-05

申请号：EP11828920.6

申请日：2011-09-22

申请人： Hitachi High-Tech Science Corporation ,  Japan Science and Technology Agency ,  JSR Corporation

发明人： KOYAMA, Yoshihiro ,  YASAKA, Anto ,  SHIMODA, Tatsuya ,  MATSUKI, Yasuo ,  KAWAJIRI, Ryo

IPC分类号： H01J37/305 ,  H01J37/30 ,  H01J37/317 ,  C23C16/04 ,  C23C16/24 ,  C23C16/32 ,  C23C16/40 ,  C23C16/42 ,  C23C16/48 ,  C23C16/56 ,  H01L21/02 ,  H01L21/28 ,  H01L21/66 ,  H01L29/66

CPC分类号： H01L21/02263 ,  C23C16/045 ,  C23C16/24 ,  C23C16/325 ,  C23C16/401 ,  C23C16/42 ,  C23C16/486 ,  C23C16/487 ,  C23C16/56 ,  H01J37/3178 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/28079 ,  H01L21/28211 ,  H01L22/20 ,  H01L29/66568 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2624279A1

公开(公告)日：2013-08-07

申请号：EP11828920.6

申请日：2011-09-22

申请人： Hitachi High-Tech Science Corporation ,  Japan Science and Technology Agency ,  JSR Corporation

发明人： KOYAMA, Yoshihiro ,  YASAKA, Anto ,  SHIMODA, Tatsuya ,  MATSUKI, Yasuo ,  KAWAJIRI, Ryo

IPC分类号： H01J37/305 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01L21/02263 ,  C23C16/045 ,  C23C16/24 ,  C23C16/325 ,  C23C16/401 ,  C23C16/42 ,  C23C16/486 ,  C23C16/487 ,  C23C16/56 ,  H01J37/3178 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/28079 ,  H01L21/28211 ,  H01L22/20 ,  H01L29/66568 ,  H01L2924/0002 ,  H01L2924/00

摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

公开(公告)号：EP1087428B1

公开(公告)日：2008-05-21

申请号：EP00912945.3

申请日：2000-03-29

申请人： Seiko Epson Corporation ,  JSR Corporation

发明人： SEKI, Shunichi, Seiko Epson Corporation ,  SHIMODA, Tatsuya ,  MIYASHITA, Satoru ,  FURUSAWA, Masahiro ,  YUDASAKA, Ichio ,  MATSUKI, Yasuo ,  TAKEUCHI, Yasumasa

IPC分类号： H01L21/208 ,  C01B33/02

CPC分类号： C23C18/06 ,  C08G77/60 ,  C09D183/16 ,  C23C18/08 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02636 ,  H01L29/6675 ,  H01L51/0005 ,  Y02P20/582

摘要： A method for forming a silicon film which comprises discharging an ink composition (11) selectively onto a predetermined region of a substrate using an ink jet head (12) to form a pattern of a silicon precursor, and then subjecting the pattern to a treatment by heat and/or light to convert the silicon precursor to an amorphous silicon film or a poly-crystal silicon film. The method can be used for providing a silicon film pattern on a large area portion of a substrate with saving energy with a low cost.

公开(公告)号：EP1087428A1

公开(公告)日：2001-03-28

申请号：EP00912945.3

申请日：2000-03-29

申请人： SEIKO EPSON CORPORATION ,  JSR Corporation

发明人： SEKI, Shunichi, Seiko Epson Corporation ,  SHIMODA, Tatsuya ,  MIYASHITA, Satoru ,  FURUSAWA, Masahiro ,  YUDASAKA, Ichio ,  MATSUKI, Yasuo ,  TAKEUCHI, Yasumasa

IPC分类号： H01L21/208 ,  C01B33/02

CPC分类号： C23C18/06 ,  C08G77/60 ,  C09D183/16 ,  C23C18/08 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02636 ,  H01L29/6675 ,  H01L51/0005 ,  Y02P20/582

摘要： An ink composition 11 containing a silicon precursor is selectively discharged into predetermined regions on a substrate from an ink jet head 12 to form a pattern of the silicon precursor, and is subjected to a heat and/or light treatment to convert the silicon precursor into an amorphous silicon film 15 or a polycrystalline silicon film 16. A silicon film pattern is thereby obtained on a large area at low cost with low energy.

摘要翻译： 含有硅前体的油墨组合物11被选择性地放电到预定区域上的衬底从喷墨头12，以形成硅前体的图案，并且经受一个热和/或光处理以将硅前体转化成在 非晶硅膜-15或多晶硅膜16的有机硅膜图案以低成本且低能量由此获得在大面积上。