公开(公告)号：EP2301991A1

公开(公告)日：2011-03-30

申请号：EP09794550.5

申请日：2009-07-09

申请人： Japan Science And Technology Agency ,  National University Corporation Kanazawa University ,  JSR Corporation

发明人： SHIMODA, Tatsuya ,  KAWAJIRI, Ryo ,  ISOBE, Kiyoshi ,  NAKAI, Hidetaka ,  MATSUKI, Yasuo

IPC分类号： C08G77/60 ,  C08G77/08

CPC分类号： C08G77/60

摘要： A polysilane production process comprising reacting a specific silane compound typified by a cyclic silane compound represented by the following formula (2) in the presence of a binuclear metal complex represented by the following formula (4).

        Si j H 2j      (2)

(in the formula (2), j is an integer of 3 to 10.)

        [CpM(µ-CH 2 )] 2      (4)

(in the formula (4), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)

摘要翻译： 一种聚硅烷的制造方法，其特征在于，在下述式（4）所示的双核金属络​​合物的存在下，使以下述式（2）表示的环状硅烷化合物为代表的特定硅烷化合物反应。 （式（2）中，j为3〜10的整数。）[式（4）中，C p为环戊二烯基系配体， M是选自Rh和Ir的金属原子，并且M之间的键是双键。）

公开(公告)号：EP2301990A1

公开(公告)日：2011-03-30

申请号：EP09794549.7

申请日：2009-07-09

申请人： Japan Science And Technology Agency ,  National University Corporation Kanazawa University ,  JSR Corporation

发明人： SHIMODA, Tatsuya ,  KAWAJIRI, Ryo ,  ISOBE, Kiyoshi ,  NAKAI, Hidetaka ,  MATSUKI, Yasuo

IPC分类号： C08G77/60 ,  C08G77/08 ,  C08G79/00

CPC分类号： C08G77/60 ,  C07F7/0896

摘要： A polymer production process comprising reacting a compound represented by the following formula (1) in the presence of a binuclear metal complex represented by the following formula (2).

        R 4-n MH n      (1)

(in the formula (1), R is a monovalent organic group, M is a silicon atom or a germanium atom, and n is 2 or 3.)

        [CpM(µ-CH 2 )] 2      (2)

(in the formula (2), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)

摘要翻译： 一种聚合物制备方法，包括在下式（2）表示的双核金属络​​合物的存在下使由下式（1）表示的化合物反应。 ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR4-n MH n€ƒ€ƒ€ƒ（1）（在公式（1）中，R是一价有机组，M 是硅原子或锗原子，n为2或3.）€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[CpM（μ-CH 2）] 2€ƒ€ƒ€ƒ€ ƒƒ（2）（式（2）中，Cp为环戊二烯基配体，M为选自Rh和Ir的金属原子，M之间的键为双键。

公开(公告)号：EP2624279A1

公开(公告)日：2013-08-07

申请号：EP11828920.6

申请日：2011-09-22

申请人： Hitachi High-Tech Science Corporation ,  Japan Science and Technology Agency ,  JSR Corporation

发明人： KOYAMA, Yoshihiro ,  YASAKA, Anto ,  SHIMODA, Tatsuya ,  MATSUKI, Yasuo ,  KAWAJIRI, Ryo

IPC分类号： H01J37/305 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01L21/02263 ,  C23C16/045 ,  C23C16/24 ,  C23C16/325 ,  C23C16/401 ,  C23C16/42 ,  C23C16/486 ,  C23C16/487 ,  C23C16/56 ,  H01J37/3178 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/28079 ,  H01L21/28211 ,  H01L22/20 ,  H01L29/66568 ,  H01L2924/0002 ,  H01L2924/00

摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

公开(公告)号：EP2624279B1

公开(公告)日：2017-04-05

申请号：EP11828920.6

申请日：2011-09-22

申请人： Hitachi High-Tech Science Corporation ,  Japan Science and Technology Agency ,  JSR Corporation

发明人： KOYAMA, Yoshihiro ,  YASAKA, Anto ,  SHIMODA, Tatsuya ,  MATSUKI, Yasuo ,  KAWAJIRI, Ryo

IPC分类号： H01J37/305 ,  H01J37/30 ,  H01J37/317 ,  C23C16/04 ,  C23C16/24 ,  C23C16/32 ,  C23C16/40 ,  C23C16/42 ,  C23C16/48 ,  C23C16/56 ,  H01L21/02 ,  H01L21/28 ,  H01L21/66 ,  H01L29/66

CPC分类号： H01L21/02263 ,  C23C16/045 ,  C23C16/24 ,  C23C16/325 ,  C23C16/401 ,  C23C16/42 ,  C23C16/486 ,  C23C16/487 ,  C23C16/56 ,  H01J37/3178 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/28079 ,  H01L21/28211 ,  H01L22/20 ,  H01L29/66568 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2226368A1

公开(公告)日：2010-09-08

申请号：EP08865378.7

申请日：2008-12-24

申请人： JSR Corporation

发明人： SAKAI, Tatsuya ,  MATSUKI, Yasuo ,  TOMINAGA, Tetsuo

IPC分类号： C09D185/00 ,  B32B15/20 ,  C09D5/00 ,  C09D7/12 ,  C07C211/65 ,  C07F5/06

CPC分类号： C09D185/00 ,  B32B15/20 ,  C07C211/65 ,  C07F5/069 ,  C09D5/00 ,  C23C18/08 ,  C23C18/10 ,  C23C18/14

摘要： A composition for forming an aluminum film, comprising a complex represented by the following formula (1) and a complex represented by the following formula (2), the molar ratio of the complex represented by the following formula (1) and the complex represented by the following formula (2) being 40:60 to 85:15: AlH 3 ⋅ NR 1 ⁢ R 2 ⁢ R 3 AlH 3 ⋅ NR 1 ⁢ R 2 ⁢ R 3 2
(in the above formulas (1) and (2), R 1 , R 2 and R 3 are each independently a hydrogen atom, alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group or aralkyl group.) .

摘要翻译： 一种用于形成在铝上的电影，包括由下式表示的复合物（1）和由下式表示的配合物（2），由下式表示的配合物的摩尔比（1），并通过所示的络合物组合物 下述式（2）是40:60〜85:15：3的AlH <¢NR 1 R 2 R 3 3的AlH¢<¢NR 1个R 2 R 3¢2（（在上述式1） 和（2）中，R 1，R 2和R 3各自独立地为氢原子，烷基，环烷基，烯基，炔基，芳基或芳烷基。）。

公开(公告)号：EP2065428A1

公开(公告)日：2009-06-03

申请号：EP07828866.9

申请日：2007-09-21

申请人： JSR Corporation

发明人： IWASAWA, Haruo ,  SAKAI, Tatsuya ,  MATSUKI, Yasuo ,  TAMAKI, Kentaro

IPC分类号： C08G77/12 ,  C04B41/81 ,  C09D183/05 ,  H01L21/316 ,  H01L21/76

CPC分类号： H01L21/3124 ,  C08G77/06 ,  C08G77/12 ,  C08G77/16 ,  C09D183/04 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/316 ,  H01L21/76224

摘要： A silicone resin which is represented by the following rational formula (1) and solid at 120°C:

        (H 2 SiO) n (HSiO 1.5 ) m (SiO 2 ) k      (1)

wherein n, m and k are each a number, with the proviso that, when n+m+k=1, n is not less than 0.5, m is more than 0 and not more than 0.95 and k is 0 to 0.2.
The silicone resin of the present invention can be advantageously used in a composition for forming a trench isolation having a high aspect ratio.

摘要翻译： 由以下合理式（1）表示的有机硅树脂和120℃下的固体：€ƒ€ƒ€ƒ€ƒ€ƒ€（ƒƒƒƒ€ƒ€ 2）k€ƒ€ƒ€ƒ€ƒ（1）其中n，m和k各自为数，条件是当n + m + k = 1时，n不小于0.5，m为 大于0且不大于0.95，k为0至0.2。 本发明的有机硅树脂可以有利地用于形成具有高纵横比的沟槽隔离的组合物中。

公开(公告)号：EP0840161A1

公开(公告)日：1998-05-06

申请号：EP97922059.7

申请日：1997-05-15

申请人： JSR Corporation

发明人： NISHIKAWA, Michinori ,  YASUDA, Kyouyu ,  KAWAMURA, Shigeo ,  TOYOSHIMA, Tsukasa ,  MATSUKI, Yasuo ,  WAKABAYASHI, Kengo

IPC分类号： G02F1/1337

CPC分类号： C08G73/10 ,  G02F1/133723

摘要： A liquid crystal alignment agent containing at least two kinds of polymers selected from the group consisting of polyamic acids and imidized polymers and having a structure obtained by dehydration and ring closure of polyamic acid. In the at least two kinds of polymers contained in the liquid crystal alignment agent, the polymer of higher imidization degree has a smaller surface free energy. The liquid crystal alignment agent gives a liquid crystal display device having less stuck image and high pretilt angle.

摘要翻译： 含有选自聚酰胺酸和酰亚胺化聚合物中的至少两种聚合物并具有通过聚酰胺酸脱水和闭环获得的结构的液晶取向剂。 在液晶取向剂中所含的至少两种聚合物中，酰亚胺化度高的聚合物具有较小的表面自由能。 液晶取向剂得到具有较少卡滞图像和高预倾角的液晶显示装置。

公开(公告)号：EP1995347A1

公开(公告)日：2008-11-26

申请号：EP06782219.7

申请日：2006-07-27

申请人： JSR Corporation

发明人： SAKAI, Tatsuya ,  MATSUKI, Yasuo ,  KAWAGUCHI, Kazuo

IPC分类号： C23C16/18 ,  H01L21/285

CPC分类号： C23C16/16 ,  C23C16/4485 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

摘要： A method of forming a metal film, comprising the steps of:
sublimating at least one metal compound selected from the group consisting of a cobalt compound, a ruthenium compound and a tungsten compound from a substrate having the above metal compound film formed thereon; and
supplying the sublimated gas to a substrate for forming a metal film to decompose the gas, thereby forming a metal film on the surface of the first substrate.
A method of forming a metal film which serves as a seed layer when a metal, especially copper is to be filled into the trenches of a substrate as an insulator by plating and as a barrier layer for preventing the migration of metal atoms to an insulating film when the substrate has no barrier layer and has excellent adhesion to the insulator.

摘要翻译： 一种形成金属膜的方法，包括以下步骤：从其上形成有上述金属化合物膜的基材升华至少一种选自钴化合物，钌化合物和钨化合物的金属化合物; 并且将升华的气体供给到用于形成金属膜的基板以分解气体，从而在第一基板的表面上形成金属膜。 当金属，特别是铜通过电镀被填充到作为绝缘体的基板的沟槽中时，形成用作种子层的金属膜的方法以及作为用于防止金属原子迁移到绝缘膜的阻挡层 当基板没有阻挡层并且对绝缘体具有优异的粘附性时。

公开(公告)号：EP0840161B1

公开(公告)日：2005-04-06

申请号：EP97922059.7

申请日：1997-05-15

申请人： JSR Corporation

发明人： NISHIKAWA, Michinori ,  YASUDA, Kyouyu ,  KAWAMURA, Shigeo ,  TOYOSHIMA, Tsukasa ,  MATSUKI, Yasuo ,  WAKABAYASHI, Kengo

IPC分类号： G02F1/1337

CPC分类号： C08G73/10 ,  G02F1/133723

公开(公告)号：EP2505613A1

公开(公告)日：2012-10-03

申请号：EP10832991.3

申请日：2010-10-15

申请人： JSR Corporation

发明人： ARAI, Takayuki ,  TAKAHASHI, Masayuki ,  KONNO, Keiji ,  MATSUKI, Yasuo

IPC分类号： C08L83/05 ,  C08G77/58 ,  C08K5/057 ,  H01L51/50 ,  H05B33/04

CPC分类号： H05B33/04 ,  C08G77/12 ,  C08G77/58 ,  C08K5/057 ,  C08K5/5419 ,  H01L23/296 ,  H01L51/5246 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A composition includes (A) a compound shown by the following general formula (1), and (B) a compound shown by the following general formula (2).

        (R 1 )nM     (1)

摘要翻译： 组合物含有（A）下述通式（1）所示的化合物和（B）下述通式（2）所示的化合物。 （R1）nM的（1）