公开(公告)号：EP0778249B1

公开(公告)日：2003-02-19

申请号：EP96916346.8

申请日：1996-06-07

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： KOMATSU, Michiyasu 262-32-1-213, Kamigo-cho ,  IKEDA, Kazuo 2925-1, Kamiyabe-cho ,  MIZUNOYA, Nobuyuki O-302 ,  SATO, Yoshitoshi 18-8-513, Higashi-cho ,  IMAIZUMI, Tatsuya 1-10-1-807, Takasago-cho ,  KONDO, Kazuyuki 2-14-10-420, Shinkoyasu

IPC分类号： C04B35/58 ,  H01L21/52 ,  H01L23/12 ,  C04B35/593

CPC分类号： H01L24/33 ,  C04B35/584 ,  C04B35/5935 ,  H01L23/15 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01064 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01105 ,  H01L2924/04953 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/3512 ,  H01L2924/00

公开(公告)号：EP0778249A1

公开(公告)日：1997-06-11

申请号：EP96916346.8

申请日：1996-06-07

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： KOMATSU, Michiyasu 262-32-1-213, Kamigo-cho ,  IKEDA, Kazuo 2925-1, Kamiyabe-cho ,  MIZUNOYA, Nobuyuki O-302 ,  SATO, Yoshitoshi 18-8-513, Higashi-cho ,  IMAIZUMI, Tatsuya 1-10-1-807, Takasago-cho ,  KONDO, Kazuyuki 2-14-10-420, Shinkoyasu

IPC分类号： C04B35/58 ,  H01L21/52 ,  H01L23/12

CPC分类号： H01L24/33 ,  C04B35/584 ,  C04B35/5935 ,  H01L23/15 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01064 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01105 ,  H01L2924/04953 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/3512 ,  H01L2924/00

摘要： A high thermal conductive silicon nitride sintered body of this invention is characterized by containing more than 7.5 wt% to at most 17.5 wt% of a rare earth element in terms of the amount of an oxide thereof, if necessary, at most 1.0 wt% of at least one of aluminum nitride and alumina, if necessary, 0.1-3.0 wt% of at least one compound selected from the group consisting of oxides, carbides, nitrides, silicides and borides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and at most 0.3 wt% of Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as impurity cationic elements in terms of total amount thereof, containing a β -type silicon nitride crystal and a grain boundary phase. The sintered body has a ratio of a crystal compound phase in the grain boundary phase to the entire grain boundary phase of at least 20%, a porosity of at most 2.5% by volume, a thermal conductivity of at least 80 W/m · K and a three-point bending strength of at least 650 MPa at a room temperature. According to the above arrangement, a silicon nitride sintered body having, in addition to the high strength characteristics generally inherent in silicon nitride sintered body, high thermal conductivity and good heat-radiating characteristics can be obtained. A press-contacted body according to the present invention is constituted such that a heat-generating part is press-contacted to a heat-radiating plate consisting of the silicon nitride sintered body.

摘要翻译： 本发明的高导热性氮化硅质烧结体，其特征在于，以氧化物换算含有7.5重量％以上17.5重量％以下的稀土类元素，根据需要含有1.0重量％以下 氮化铝和氧化铝中的至少一种，如果需要，选自0.1-3.0重量％的至少一种选自Ti，Zr，Hf，V，Nb，Ta的氧化物，碳化物，氮化物，硅化物和硼化物的化合物， Cr，Mo和W，并且至多0.3重量％的作为杂质阳离子元素的Li，Na，K，Fe，Ca，Mg，Sr，Ba，Mn和B以总量计包含β型氮化硅 晶体和晶界相。 烧结体的晶界相中的结晶化合物相与晶界相的整体相的比例为20％以上，气孔率为2.5体积％以下，导热率为80W / m·K 在室温下具有至少650MPa的三点弯曲强度。 根据上述结构，除了氮化硅烧结体通常固有的高强度特性以外，还可以得到具有高导热性和良好的散热特性的氮化硅烧结体。 根据本发明的压接体被构造成使得发热部分与由氮化硅烧结体构成的散热板压接。