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公开(公告)号：EP4059912B1
公开(公告)日：2024-11-13
申请号：EP20888263.9
申请日：2020-11-13
IPC分类号： C04B35/587 , C04B35/64 , H05K1/02 , H05K1/03 , H05K3/00 , C04B35/581 , C04B35/593 , C04B35/638 , C04B37/02
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公开(公告)号：EP4059911B1
公开(公告)日：2024-04-10
申请号：EP20887982.5
申请日：2020-11-13
IPC分类号： C04B35/581 , C04B35/587 , C04B35/64 , H05K1/02 , H05K1/03 , H05K3/00 , C04B35/593 , C04B37/02 , C04B35/80
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公开(公告)号：EP3950582B1
公开(公告)日：2023-12-13
申请号：EP20783738.6
申请日：2020-03-26
发明人： NAKAMURA Yuzo , MIYASHITA Toshiyuki
IPC分类号： C01B21/068 , C04B35/593
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公开(公告)号：EP3061739B1
公开(公告)日：2023-02-01
申请号：EP14856390.1
申请日：2014-10-21
IPC分类号： C04B35/584 , H01L23/15 , H05K1/03 , B32B18/00 , C01B21/068 , C04B35/587 , C04B35/593 , C04B35/626 , C04B35/632 , C04B35/634 , C04B35/638 , H01L23/498 , H05K1/02 , H01L23/373
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公开(公告)号：EP3896300A1
公开(公告)日：2021-10-20
申请号：EP19895924.9
申请日：2019-11-19
发明人： FUNAKI, Kai , AOKI, Katsuyuki , YAMAGUTI, Haruhiko , TAKAO, Minoru , ABE, Yutaka
IPC分类号： F16C33/24 , F16C33/32 , H02K5/173 , C04B35/593
摘要： Provided is a sliding member comprising a sintered silicon nitride having silicon nitride crystal grains and grain boundary phases, the sliding member being characterized in that in a 50 µm x 50 µm observation area of an arbitrary cross section or surface of the sintered silicon nitride, a proportion of the number of silicon nitride crystal grains having dislocation defects therein in arbitrary 50 silicon nitride grains showing full contours thereof is 0-10% inclusive. More preferably, said proportion is 0-3% inclusive.
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公开(公告)号：EP3516174A1
公开(公告)日：2019-07-31
申请号：EP17777354.6
申请日：2017-09-22
发明人： GRAINGER, John , SMITH, Geoff , BRACEY, Tristram
IPC分类号： F01D5/03 , C04B35/591 , F01D5/30 , C04B35/593
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公开(公告)号：EP2832687B1
公开(公告)日：2018-11-14
申请号：EP13768416.3
申请日：2013-03-25
申请人： UBE Industries, Ltd.
发明人： SHIBATA, Koji , OHMARU, Takuji , YAMAO, Takeshi , FUJINAGA, Masataka , HONDA, Michio , FUJII, Takayuki
IPC分类号： C01B21/068 , C04B35/593
CPC分类号： C01B21/0687 , C01B21/068 , C01P2006/12 , C01P2006/80 , C04B35/5935 , C04B2235/3206 , C04B2235/3225 , C04B2235/5409 , C04B2235/723 , C04B2235/77 , C04B2235/96 , Y10T428/2982
摘要： An object of the present invention is to provide a silicon nitride sintered body having high mechanical strength and thermal conductivity, and a circuit substrate using the same. A method for producing a silicon nitride powder, including heating an amorphous Si-N(-H)-based compound in which assuming that the specific surface area is RS (m 2 /g) and the oxygen content ratio is RO (mass%), RS/RO is 500 or more, at a temperature rising rate of 12 to 100°C/min in a temperature range from 1,000 to 1,400°C while flowing the compound by a continuous firing furnace, is provided. Also, a silicon nitride powder wherein assuming that the content ratio of oxygen existing in a region from the particle surface to 3 nm beneath the particle surface is FSO (mass%), the content ratio of oxygen existing in the more inward side than 3 nm beneath the particle surface is FIO (mass%), and the specific surface area is FS (m 2 /g), FS/FSO is from 8 to 25 and FS/FIO is 22 or more; a silicon nitride sintered body obtained by sintering the silicon nitride powder; and a circuit substrate using the silicon nitride sintered body, are provided.
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公开(公告)号：EP2760807A4
公开(公告)日：2015-06-03
申请号：EP12836818
申请日：2012-09-27
IPC分类号： C04B35/591 , B82Y30/00 , C04B35/593
CPC分类号： C04B35/587 , B82Y30/00 , C04B35/584 , C04B35/591 , C04B35/593 , C04B2235/3222 , C04B2235/3225 , C04B2235/3826 , C04B2235/383 , C04B2235/428 , C04B2235/46 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C04B2235/781 , C04B2235/785 , C04B2235/786 , C04B2235/788 , C04B2235/80 , C04B2235/96
摘要： A composite article having a body including a first phase that includes a nitride material, a second phase that includes a carbide material, and a third phase having one of an amorphous phase material with a nitrogen content of at least about 1.6 wt % or an amorphous phase material comprising carbon.
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公开(公告)号：EP2008986B1
公开(公告)日：2014-08-20
申请号：EP08104446.3
申请日：2008-06-17
申请人： Meggitt (France)
IPC分类号： C04B38/00 , C04B35/58 , C04B35/645 , C04B35/575 , H01T13/38 , H01T13/39 , C04B35/593 , C04B35/597
CPC分类号： H01T13/38 , C04B35/565 , C04B35/58092 , C04B35/584 , C04B35/597 , C04B2235/3206 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3873 , C04B2235/80
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10.发明公开PROCEDE DE FABRICATION D'UN COMPOSITE A MATRICE CERAMIQUE ET A FIBRES DE CARBURE DE SILICIUM ET COMPOSITE AINSI OBTENU 审中-公开一种用于制造复合材料的方法，陶瓷基体和碳化硅纤维含有，以及所得到的复合
公开(公告)号：EP1431258A3
公开(公告)日：2011-02-23
申请号：EP03104846.5
申请日：2003-12-19
IPC分类号： C04B35/575 , C04B35/80 , C04B35/81 , C04B35/56 , C04B35/593 , C04B35/622 , C04B35/626
CPC分类号： C04B35/62281 , B82Y30/00 , C04B35/5603 , C04B35/5755 , C04B35/5935 , C04B35/62695 , C04B35/806 , C04B2235/3834 , C04B2235/3856 , C04B2235/3873 , C04B2235/3895 , C04B2235/5244 , C04B2235/5276 , C04B2235/5296 , C04B2235/5454 , C04B2235/604 , C04B2235/608 , C04B2235/614 , C04B2235/616 , C04B2235/656 , C04B2235/661 , C04B2235/77
摘要： L'invention se rapporte à un procédé de fabrication d'un composite constitué d'une matrice céramique et de fibres de carbure de silicium (SiC), qui comprend une opération de croissance des fibres de SiC dans un compact renfermant du silicium, du carbone, de l'azote et de l'oxygène et contenant du SiC sous forme de cristaux, ainsi qu'une opération de densification de ce compact, et dans lequel ladite opération de croissance des fibres de SiC est réalisée simultanément à l'étape de densification dudit compact.
L'invention se rapporte également au composite ainsi obtenu.
Applications : industries automobile, aéronautique, spatiale et nucléaire, et notamment pour la réalisation d'outils de coupe ou de forage, ou la réalisation de blindages.
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