公开(公告)号：EP2299496A2

公开(公告)日：2011-03-23

申请号：EP10176519.6

申请日：2010-09-14

申请人： SCHOTT Solar AG

发明人： Metz, DR., Axel ,  Bagus, Stefan ,  Dauwe, DR., Stefan ,  Droste, Tobias ,  Roth, Peter ,  Teppe, Andreas

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L21/268 ,  B23K26/40 ,  H01L21/60 ,  B23K26/06 ,  H01L31/068

CPC分类号： H01L31/186 ,  H01L21/268 ,  H01L24/03 ,  H01L24/05 ,  H01L31/022425 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  Y02E10/50 ,  Y02P70/521

摘要： Die Erfindung bezieht sich auf ein Verfahren zum Ausbilden zumindest eines lokalen Kontaktbereichs eines Substrats eines elektrischen Bauelementes zum Kontaktieren des Kontaktbereichs mit einem Verbinder, wobei das Substrat kontaktseitig mit einer aus Metall bestehenden oder Metall enthaltenden porösen Schicht versehen ist. Um einen mechanisch haltbaren elektrisch einwandfrei lötbaren Kontaktbereich zur Verfügung zu stellen, wird vorgeschlagen, dass die poröse Schicht in dem auszubildenden Kontaktbereich verdichtet und/oder entfernt wird.

摘要翻译： 形成电气部件的基板（10）的局部接触区域（20）包括使接触侧的基板与包含铝的烧结多孔层（12）接触; 并且在通过集中电磁辐射形成的接触区域中压实和/或去除烧结多孔层。

公开(公告)号：EP1700875A3

公开(公告)日：2007-06-27

申请号：EP06075440.5

申请日：2006-02-28

申请人： Delphi Technologies, Inc.

发明人： Basheer, Rafil A. ,  Workman, Derek B. ,  Chaudhuri, Arun K. ,  Bouguettaya, Mohamed

IPC分类号： C08G59/50 ,  H01L23/31

CPC分类号： C08G59/5033 ,  C08G59/3227 ,  H01L21/563 ,  H01L23/293 ,  H01L23/49811 ,  H01L24/10 ,  H01L24/13 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/0107 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1579 ,  H01L2924/00 ,  H01L2224/0401

摘要： Disclosed is a curable composition having a low CTE. In one embodiment, a curable composition is disclosed that comprises (i) a binder comprising at least one epoxy compound of the structure:

         X-((CH 2 ) m -(N)-((CH 2 ) n -(Z)) 2 ) p

wherein X is an aromatic ring or a six membered cycloaliphatic ring, m is from about 0 to about 2, n is from about 1 to about 3, Z is an epoxy group of empirical formula: C 2 H 3 O, p is a number from about 2 to about 3, and (ii) a cross-linking agent comprising at least one polyamine. This curable composition is characterized by a CTE of no more than 60 ppm/°C when cured for a time of from about 20 to about 60 minutes at temperature of from about 100 to 240°C. Also disclosed are methods of making integrated circuits and integrated circuits made there from, especially flip chips.

公开(公告)号：EP1553640A1

公开(公告)日：2005-07-13

申请号：EP03766716.9

申请日：2003-08-01

申请人： Nichia Corporation

发明人： KUSUSE, Takeshi, NICHIA CORPORATION ,  SAKAMOTO, Takahiko, NICHIA CORPORATION

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/00012

摘要： A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

公开(公告)号：EP1369912A3

公开(公告)日：2004-01-14

申请号：EP03006161.8

申请日：2003-03-19

申请人： ROBERT BOSCH GMBH

发明人： Lutz, Markus ,  Hack, Ruediger

IPC分类号： H01L21/60 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/75253 ,  H01L2224/81224 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00

摘要： Method for bonding a chip (20) to a chip carrier (21) including arranging the chip (20) in alignment with the chip carrier (21) to form a chip stack. First bond area situated on the chip at an interface between the chip (20) and the chip carrier (21) in contact with second bond area situated on the chip carrier (21) at the interface. Projecting a laser beam (25) through the chip (20) and/or the chip carrier (21), the laser beam (25) impinging on the first bond area and/or the second bond area melting the first bond area and/or the second bond area to form a bond electrically coupling the chip (20) and the chip carrier (21). A device including a chip (20) having a first bond area situated on a chip carrier side of the chip and a chip carrier (21) having a second bond area situated on a chip side of the chip carrier (21). The contact area less than about 40 µm 2 . A system for bonding a chip (20) to a chip carrier (21) including a laser (25) and an aperture for holding a chip stack in alignment. The chip stack includes a chip (20) and a chip carrier (21). The laser (25) is directed and/or focused by the aperture. The laser projects a laser beam through the chip (20) and /or the chip carrier (21) which impinges on the first bond area and/or the second bond area. The first bond area situated on a chip carrier side of the chip (20) and the second bond area situated on a chip side of the chip carrier (21). The first bond area area contacting the second bond area. The first bond area is bonded to the second bond area by the laser beam (25) impinging on the first bond area and/or the second bond area.

公开(公告)号：EP0645810A4

公开(公告)日：1997-04-16

申请号：EP94912058

申请日：1994-04-06

申请人： TOKUYAMA CORP

发明人： MIYAHARA KENICHIRO

IPC分类号： H01L23/057 ,  H01L23/367 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H01L23/04

CPC分类号： H01L23/057 ,  H01L23/3675 ,  H01L23/49537 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/85099 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/20102 ,  H01L2924/20753 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/20109 ,  H01L2924/00012

摘要： A package for a semiconductor chip having the following features: (a) a power-supply layer, a ground layer, and a signal layer are formed in multilayer through intermediate layers including insulating layers; (b) the power-supply layer and ground layer each comprise an inner lead region exposed from the intermediate layers, an outer lead region, and a conductive region sandwiched by these two regions and covered by the intermediate layers; and (c) the conductive regions of the power-supply layer and ground layer consist of planar conductive members. The self-inductances of the power-supply and ground layers of this package are low, and the capacitance of the capacitor formed by these layers is low. Therefore, the noise of the power-supply system is little.

公开(公告)号：EP0258869B1

公开(公告)日：1994-05-18

申请号：EP87112737.9

申请日：1987-09-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yamanaka, Kazuyuki ,  Shibasaka, Mitsusada

IPC分类号： H01L21/00 ,  H01L21/60

CPC分类号： H01L21/67144 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/48 ,  H01L2224/85148 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01066 ,  H01L2924/0107 ,  H01L2924/01082 ,  H01L2224/45099 ,  H01L2224/05599

公开(公告)号：EP0258869A2

公开(公告)日：1988-03-09

申请号：EP87112737.9

申请日：1987-09-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yamanaka, Kazuyuki ,  Shibasaka, Mitsusada

IPC分类号： H01L21/00 ,  H01L21/60

CPC分类号： H01L21/67144 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/48 ,  H01L2224/85148 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01066 ,  H01L2924/0107 ,  H01L2924/01082 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Wire-bonding of a semiconductor device designed in accordance with the CAD system is implemented on the basis of bonding data obtained by making use of the design data in the CAD system. For the design data in the CAD system, coordinate data of the bonding pads and the lead frames and wiring information therebetween are used. Since ordinarily the coordinate system in the CAD system and the coordinate system in the wire-bonding apparatus are not equal to each other, coordinate transformation is applied to the bonding data obtained from the CAD system. The data thus transformed is delivered to the bonding unit. Since there is employed a scheme to utilize the design data in the CAD system, the necessity of inputting bonding data by an operator is eliminated, thus making it possible to carry out bonding work free from an error in a short time.

摘要翻译： 基于通过使用CAD系统中的设计数据获得的结合数据来实现根据CAD系统设计的半导体器件的线接合。 对于CAD系统中的设计数据，使用接合焊盘和引线框架的坐标数据以及它们之间的接线信息。 由于通常CAD系统中的坐标系和引线键合装置中的坐标系彼此不相等，因此对从CAD系统获得的结合数据应用坐标变换。 将如此变换的数据传送到接合单元。 由于采用在CAD系统中利用设计数据的方案，消除了由操作者输入接合数据的必要性，因此能够在短时间内进行无错误的接合工作。

公开(公告)号：EP2684970A4

公开(公告)日：2015-03-04

申请号：EP12754623

申请日：2012-02-15

申请人： JX NIPPON MINING & METALS CORP

发明人： KANOU GAKU

IPC分类号： C22B15/14 ,  C22C9/00 ,  C22C9/08 ,  C25C1/00 ,  C25C1/12 ,  C25C7/04 ,  H01L21/60

CPC分类号： B23K35/302 ,  C22C9/00 ,  C22C9/08 ,  C25C1/12 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/01204 ,  H01L2924/01005 ,  H01L2924/01056 ,  H01L2924/01004 ,  H01L2924/01083 ,  H01L2924/0102 ,  H01L2924/01058 ,  H01L2924/01027 ,  H01L2924/01024 ,  H01L2924/01066 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01032 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01057 ,  H01L2924/01012 ,  H01L2924/01042 ,  H01L2924/0106 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01045 ,  H01L2924/01044 ,  H01L2924/01051 ,  H01L2924/0105 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01022 ,  H01L2924/0107 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01092 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2224/48

公开(公告)号：EP2479786A4

公开(公告)日：2013-04-03

申请号：EP10816911

申请日：2010-03-09

申请人： BONDTECH CO LTD

发明人： YAMAUCHI AKIRA

IPC分类号： H01L21/60 ,  H01L21/02 ,  H05K3/34 ,  H05K13/04

CPC分类号： H01L24/75 ,  G01B11/14 ,  H01L23/544 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/757 ,  H01L2224/81009 ,  H01L2224/81121 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81204 ,  H01L2224/81801 ,  H01L2224/83121 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0107 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  H05K1/0269 ,  H05K3/303 ,  H05K2201/09918 ,  H05K2203/166 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A pressure application technique is provided that enables two objects to be pressurized (e.g., objects to be bonded) to be positioned with greater accuracy before having pressure applied thereto. The objects to be pressurized are moved relative to each other in a Z direction such that the objects are brought into contact with each other (step S13). Then, a horizontal positional shift ”D between the objects to be pressurized is measured in the contact state of the objects to be pressurized (step S14). Thereafter, positioning of the objects to be pressurized is again performed by moving the objects to be pressurized relative to each other in the horizontal direction, as a result of which the positional shift ”D is corrected (step S17).

公开(公告)号：EP2208801B1

公开(公告)日：2012-04-04

申请号：EP08846565.3

申请日：2008-09-11

申请人： Tanaka Denshi Kogyo K.K.

发明人： MURAI, Hiroshi ,  CHIBA, Jun ,  AMADA, Fujio

IPC分类号： C22C5/02 ,  B23K35/30 ,  H01L23/00 ,  H01L21/60

CPC分类号： C22C5/02 ,  B23K35/3013 ,  H01L24/02 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45164 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78306 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/0107 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/01071 ,  H01L2924/00014 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/20752 ,  H01L2924/00013 ,  H01L2924/01006

摘要： [Issues to be solved] Second bonding failures caused attached oxide of additive elements on high purity Au bonding wire are to be dissolved. [Solution means] Au alloy bonding wires comprising: 5 - 100 wt ppm Mg, 5 - 20 wt ppm In, 5 - 20 wt ppm Al, 5 - 20 wt ppm Yb, and Au residual is more than 99.995 wt % purity, and adding 5 - 20 wt ppm Ca, and for these alloys adding at least more than one element among 5 - 20 wt ppm La, 5 - 20 wt ppm Lu, 5 - 100 wt ppm Sn, 5 - 100 wt ppm Sr to the alloy, and/or, more over, adding 0.01 - 1.2 wt % Pd to these alloys. Bonding wire, which contains these trace additive elements .do not cause of disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding to attached on tip of capillary, transferring to the wire at second bonding.