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1.发明公开
公开(公告)号：EP3140849A1
公开(公告)日：2017-03-15
申请号：EP15835724.4
申请日：2015-08-28
发明人： BROWN, David L. , CHUANG, Yung-Ho Alex , FIELDEN, John , TRIMPL, Marcel , ZHANG, Jingjing , CONTARATO, Devis , IYER, Venkatraman
IPC分类号： H01J37/28
CPC分类号： G01N30/72 , G01T1/24 , G06F19/00 , H01J37/244 , H01J37/28 , H01J49/02 , H01J2237/2441 , H01J2237/2446 , H01J2237/24475 , H01J2237/24495 , H01J2237/24592 , H01L27/1464 , H01L27/14659 , H01L27/14661 , H01L31/00
摘要： A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.
摘要翻译： 扫描电子显微镜结合了多像素固态电子检测器。 多像素固态检测器可以检测反向散射和/或二次电子。 多像素固态检测器可以并入模数转换器和其他电路。 多像素固态检测器可以能够近似地确定入射电子的能量和/或可以包含用于处理或分析电子信号的电路。 多像素固态检测器适用于高速操作，例如以大约100MHz或更高的速度。 扫描电子显微镜可以用于检查，检查或测量诸如未图案化的半导体晶片，图案化半导体晶片，掩模版或光掩模的样品。 还描述了检查或检查样品的方法。
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2.发明公开PHOTOMULTIPLIER TUBE, IMAGE SENSOR, AND AN INSPECTION SYSTEM USING A PMT OR IMAGE SENSOR 有权光电倍增管，图像传感器和检查系统带有影像传感器PMT OR
公开(公告)号：EP2973713A1
公开(公告)日：2016-01-20
申请号：EP14779717.9
申请日：2014-04-01
IPC分类号： H01L27/146
CPC分类号： H01J40/06 , H01J43/08 , H01L31/02161 , H01L31/103
摘要： A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 µm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.
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3.发明公开INTEGRATED MULTI-CHANNEL ANALOG FRONT END AND DIGITIZER FOR HIGH SPEED IMAGING APPLICATIONS 审中-公开综合模拟多声道前端和转换器，用于高速记录应用
公开(公告)号：EP2810244A1
公开(公告)日：2014-12-10
申请号：EP13743326.4
申请日：2013-02-01
发明人： BROWN, David L. , KERMAT, Mansour , GLASSER, Lance , NIELSEN, Henrik , ZHENG, Guowu , LEHMAN, Kurt , HATCH, Kenneth , CHUANG, Alex , IYER, Venkatraman
CPC分类号： H04N5/378 , H01L27/14634 , H04N5/3694 , H04N5/37206 , H04N5/37213
摘要： A module for high speed image processing includes an image sensor for generating a plurality of analog outputs representing an image and a plurality of high density digitizers (HDDs) for concurrently processing the plurality of analog outputs. Each HDD is an integrated circuit configured to process in parallel a predetermined set of the analog outputs. Each channel of the HDD can include an analog front end (AFE) for conditioning a signal representing one sensor analog output, an analog-to-digital converter (ADC) for converting a conditioned signal into a digital signal, and a data formatting block for calibrations and formatting the digital signal for transport to an off-chip device. The HDDs and drive electronics are combined with the image sensor into one package to optimize signal integrity and high dynamic range, and to achieve high data rates through use of synchronized HDD channels. Combining multiple modules results in a highly scalable imaging subsystem optimized for inspection and metrology applications.
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4.发明公开ELECTRON-BOMBARDED CHARGE-COUPLED DEVICE AND INSPECTION SYSTEMS USING EBCCD DETECTORS 审中-公开ELEKTRONENBOMBARDIERTE CHARGE加上EBCCD探测器装置和检查系统
公开(公告)号：EP2791961A1
公开(公告)日：2014-10-22
申请号：EP12857499.3
申请日：2012-12-11
IPC分类号： H01J31/50
CPC分类号： G01N21/88 , G01N21/9501 , G01N2021/8822 , G01N2021/95676 , H01J31/26 , H01L27/14806 , H01L27/14818 , H01L27/14856
摘要： A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap.
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5.发明授权PHOTOMULTIPLIER TUBE, IMAGE SENSOR, AND AN INSPECTION SYSTEM USING A PMT OR IMAGE SENSOR 有权光电倍增管，图像传感器和使用PMT或图像传感器的检测系统
公开(公告)号：EP2973713B1
公开(公告)日：2017-11-29
申请号：EP14779717.9
申请日：2014-04-01
IPC分类号： H01L31/0216 , H01J40/06 , H01J43/08 , H01L31/103
CPC分类号： H01J40/06 , H01J43/08 , H01L31/02161 , H01L31/103
摘要： A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.
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公开(公告)号：EP3440832A1
公开(公告)日：2019-02-13
申请号：EP17779768.5
申请日：2017-04-05
发明人： CHUANG, Yung-Ho Alex , ZHANG, Jingjing , ZAMEK, Steve , FIELDEN, John , CONTARATO, Devis , BROWN, David L.
IPC分类号： H04N5/372 , H04N5/378 , H01L27/146
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公开(公告)号：EP2837031A1
公开(公告)日：2015-02-18
申请号：EP13775490.9
申请日：2013-04-08
发明人： CHERN, Jehn-Huar , EHSANI, Ali R. , DELGADO, Gildardo , BROWN, David L. , CHUANG, Yung-Ho Alex , FIELDEN, John
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L31/0216 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L27/14689 , H01L27/14806
摘要： An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.
摘要翻译： 用于短波长光和带电粒子的图像传感器包括半导体膜，在半导体膜的一个表面上形成的电路元件以及在半导体膜的另一个表面上的纯硼层。 该图像传感器即使在多年的高通量连续使用下也具有高效率和高稳定性。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包含在电子轰击图像传感器和/或检查系统中。
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8.发明授权
公开(公告)号：EP2791961B1
公开(公告)日：2019-06-05
申请号：EP12857499.3
申请日：2012-12-11
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公开(公告)号：EP2837031B1
公开(公告)日：2017-06-07
申请号：EP13775490.9
申请日：2013-04-08
发明人： CHERN, Jehn-Huar , EHSANI, Ali R. , DELGADO, Gildardo , BROWN, David L. , CHUANG, Yung-Ho Alex , FIELDEN, John
IPC分类号： H01L27/146 , G01N21/95 , G01N21/88 , G01N21/956
CPC分类号： H01L31/0216 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L27/14689 , H01L27/14806
摘要： An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.
摘要翻译： 用于短波长光和带电粒子的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。 图像传感器可以包括在电子轰击图像传感器和/或检查系统中。
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