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1.发明公开METHODS OF PRODUCING SHEETS OF CRYSTALLINE MATERIAL AND DEVICES AMDE THEREFROM 失效生产工艺叶晶体材料和产生的那些器件。
公开(公告)号：EP0049286A1
公开(公告)日：1982-04-14
申请号：EP81901098.0
申请日：1981-04-06
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02002 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2221/68318 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/902 , Y10S117/904 , Y10S117/905 , Y10S117/915 , Y10S148/026 , Y10S148/048 , Y10S148/054 , Y10S148/09 , Y10S148/135 , Y10S438/977 , H01L2924/00
摘要： A method of producing sheets of crystalline material, wherein a growth mask is formed upon a crystallization substrate so as to leave areas of the substrate exposed and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is separated so that the substrate can be reused, if desired. To separate the sheet from the crystallization substrate, a new substrate is applied to the sheet of crystalline material and then the new sheet and substrate are together separated from the crystallization substrate.
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公开(公告)号：EP0034166A1
公开(公告)日：1981-08-26
申请号：EP80901688.0
申请日：1980-08-07
CPC分类号： H01L29/66424 , H01L21/02395 , H01L21/02532 , H01L21/02546 , H01L21/02639 , H01L21/743 , H01L23/4824 , H01L23/52 , H01L23/535 , H01L28/40 , H01L29/7722 , H01L2924/0002 , H01L2924/3011 , Y10S148/164 , H01L2924/00
摘要： Un transistor a base permeable (30) comprend une couche de base metallique (34) noyee dans un cristal semi-conducteur (32) pour separer des regions collectrice (38) et emettrice (40) et former une barriere de Schottky avec chacune d'elles. La couche de base metallique possede au moins une ouverture (37) au travers de laquelle le cristal semi-conducteur (32) joint les regions collectrice (38) et emettrice (40). Des contacts ohmiques (42, 44) sont realises sur les regions emettrice (40) et collectrice (38). La largeur de toutes les ouvertures (37) dans la couche de base (34) est de l'ordre de la largeur d'appauvrissement de polarisation (0) correspondant a la concentration porteuse dans l'ouverture. L'epaisseur de la couche metallique (34) est de l'ordre de 10% de cette largeur d'appauvrissement de polarisation (0). Il en resulte qu'une barriere potentielle dans chaque ouverture limite le passage de courant sur la partie inferieure de la gamme de polarisation. En augmentant la polarisation de base en sens direct, le potentiel dans les ouvertures qui est inferieur au potentiel le long du metal de la couche de base (34) est abaisse suffisamment pour permettre une augmentation sensible du passage de courant limite par la barriere du collecteur (38) vers l'emetteur (40). Procede de fabrication de ce transistor, et methodes de formation de structures de circuits integres. Du metal et d'autres couches peuvent etre noyees de maniere selective dans un cristal semi-conducteur. Des couches metalliques noyees peuvent servir d'interconnexions entre des dispositifs. Des dispositifs peuvent avoir une configuration empilee.
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3.发明授权
公开(公告)号：EP0049286B1
公开(公告)日：1988-03-02
申请号：EP81901098.4
申请日：1981-04-06
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02002 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2221/68318 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/902 , Y10S117/904 , Y10S117/905 , Y10S117/915 , Y10S148/026 , Y10S148/048 , Y10S148/054 , Y10S148/09 , Y10S148/135 , Y10S438/977 , H01L2924/00
摘要： A method of producing sheets of crystalline material, wherein a growth mask is formed upon a crystallization substrate so as to leave areas of the substrate exposed and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is separated so that the substrate can be reused, if desired. To separate the sheet from the crystallization substrate, a new substrate is applied to the sheet of crystalline material and then the new sheet and substrate are together separated from the crystallization substrate.
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公开(公告)号：EP0034166B1
公开(公告)日：1987-04-29
申请号：EP80901688.4
申请日：1980-08-07
CPC分类号： H01L29/66424 , H01L21/02395 , H01L21/02532 , H01L21/02546 , H01L21/02639 , H01L21/743 , H01L23/4824 , H01L23/52 , H01L23/535 , H01L28/40 , H01L29/7722 , H01L2924/0002 , H01L2924/3011 , Y10S148/164 , H01L2924/00
摘要： A permeable base transistor (30) including a metal base layer (34) embedded in a semiconductor crystal (32) to separate collector (38) and emitter (40) regions and form a Schottky barrier with each. The metal base layer has at least one opening (37) through which the crystal semiconductor (32) joins the collector (38) and emitter (40) regions. Ohmic contacts (42, 44) are made to the emitter (40) and collector (38) regions. The width of all openings (37) in the base layer (34) is of the order of the zero bias depletion width corresponding to the carrier concentration in the opening. The thickness of the metal layer (34) is in the order of 10% if this zero bias depletion width. As a result, a potential barrier in each opening limits current flow over the lower portion of the bias range. With increasing forward base bias the potential in the openings, which is lower than along the metal of the base layer (34), is lowered sufficiently to permit substantial increase in the barrier limited current flow from the collector (38) to emitter (40). A method of fabricating this transistor as well as methods for forming integrated circuit structures are also disclosed. Metal and other layers may be selectively embedded in semiconductor crystal. Embedded metal layers may serve as interconnections between devices. Devices may be in a stacked configuration.
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