公开(公告)号：EP0659910A3

公开(公告)日：1998-10-21

申请号：EP94118223

申请日：1994-11-18

申请人： MEGA CHIPS CORP

发明人： SHIINDO MASAHIRO ,  KOSAKA DAISUKE ,  HIKAWA TETSUO ,  TAKATA AKIRA ,  UKAI YUKIHIRO ,  SAWADA TAKASHI ,  ASAKAWA TOSHIFUMI

IPC分类号： B81B3/00 ,  C23C16/48 ,  C23C16/511 ,  C23C16/56 ,  G01L9/00 ,  G01P15/08 ,  H01H59/00 ,  H01J37/32 ,  H01L27/12 ,  H01L31/0376 ,  H01L31/078 ,  H01L31/18 ,  H02N1/00 ,  C30B25/00

CPC分类号： H01J37/32678 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/0038 ,  B81C2201/0109 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  G02F2001/136281 ,  H01H59/0009 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

摘要翻译： 为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104） 从多个规定方向照射Ne原子电流，使得最上层（1104）的晶体取向被转换成使得（111）面向上指向的取向。 采用掩模构件（106）作为屏蔽构件，以从其底面各向异性地蚀刻衬底（1102），由此形成V形槽（1112）。 此时，最上层（1104）用作蚀刻停止件。 因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。 具有复合构件的微机械，例如由单晶材料制成的图可以容易地通过无接合制造。