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    THERMAL SPREADER HAVING INTER-METAL DIFFUSION BARRIER LAYER
    5.
    发明公开
    THERMAL SPREADER HAVING INTER-METAL DIFFUSION BARRIER LAYER 审中-公开
    具有金属间扩散阻挡层的热扩散器

    公开(公告)号：EP3271940A1

    公开(公告)日：2018-01-24

    申请号：EP16713246.3

    申请日：2016-03-18

    申请人： Raytheon Company

    发明人： TRULLI, Susan, C.

    IPC分类号： H01L23/373

    CPC分类号： H01L23/34 ,  F28F21/085 ,  F28F21/087 ,  F28F21/089 ,  H01L23/373 ,  H01L23/3731 ,  H01L23/3735

    摘要： A heat spreader provided having: as ceramic substrate; and metallization layer structure disposed on at least one surface of the substrate. The metallization layer structure includes: a thick film layer disposed on the at least one surface of the substrate; a diffusion barrier layer on, and in direct contact with the thick film layer; and as heat conducting layer disposed on, and in direct contact with, the diffusion barrier layer. The diffusion barrier layer inhibits material in the thick film layer and material in the heat conducting layer from diffusing between the thick film layer and the heat conductive layer. The metallization layer structure is disposed on a plurality of sides of the substrate.

    SUBSTRATE UNIT FOR POWER MODULES, AND POWER MODULE
    7.
    发明公开
    SUBSTRATE UNIT FOR POWER MODULES, AND POWER MODULE 审中-公开
    功率模块的基板单元和功率模块

    公开(公告)号：EP3166140A1

    公开(公告)日：2017-05-10

    申请号：EP15814706.6

    申请日：2015-06-30

    申请人： Mitsubishi Materials Corporation

    发明人： OI, Sotaro ,  OOHIRAKI, Tomoya

    IPC分类号： H01L23/13 ,  H01L23/36 ,  H01L25/07 ,  H01L25/18

    CPC分类号： H01L23/36 ,  C04B35/645 ,  C04B37/026 ,  C04B2237/121 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/66 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/86 ,  H01L23/3731 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/4334 ,  H01L23/473 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/37147 ,  H01L2224/40137

    摘要： In a power-module substrate unit 51, a circuit layer 12 is structured by a plurality of small circuit layers 12S; a ceramic substrate layer 11 is structured by at least one plate; the small circuit layers 12S are formed to have a layered structure having a first aluminum layer 15 bonded on one surface of the ceramic substrate layer 11 and a first copper layer 16 bonded on the first aluminum layer 15 by solid diffusion; a radiation plate 30 is made of copper or copper alloy; the metal layer 13 and the radiation plate 30 are bonded by solid diffusion, and a ratio (t1 × A1 × σ1) / (t2 × A2 × σ2) is not smaller than 0.80 and not larger than 1.20 where a thickness is t1 (mm), a bonding area is A1 (mm 2 ), and an yield stress is σ1 (N/mm 2 ) of the first copper layer 16; a thickness at a bonding position to the metal layer is t2 (mm), a bonding area is A2 (mm 2 ), and an yield stress of the radiation plate 30 is σ2 (N/mm 2 ).

    摘要翻译： 在功率模块用基板单元51中，电路层12由多个小电路层12S构成， 陶瓷基底层11由至少一个板构成; 小电路层12S形成为具有层叠结构，该层叠结构具有结合在陶瓷基板层11的一个表面上的第一铝层15和通过固体扩散结合在第一铝层15上的第一铜层16; 辐射板30由铜或铜合金制成; 金属层13和辐射板30通过固体扩散接合，并且其中厚度为t1（mm）的比率（t1×A1×σ1）/（t2×A2×σ2）不小于0.80且不大于1.20 ），接合面积为A1（mm2），屈服应力为第一铜层16的σ1（N / mm2） 与金属层的接合位置的厚度为t2（mm），接合面积为A2（mm2），辐射板30的屈服应力为σ2（N / mm2）。