公开(公告)号：EP1472718A4

公开(公告)日：2007-08-29

申请号：EP02794455

申请日：2002-12-31

申请人： MOTOROLA INC

发明人： CHOWDHURI ABHIJIT R ,  ZHANG JIE ,  GAMOTA DANIEL R

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0003 ,  H01L51/0004 ,  H01L51/0007 ,  H01L51/0036 ,  H01L51/0512

摘要： The present invention (Figure 1) is directed to semiconductor films and a process for their preparation. In accordance with the process of the present invention, semiconductor organic material is blended with a multi-component solvent blend and the blend is deposited on a receiving material to provide a continuous highly ordered film having greater periodicity than films produced with a single solvent/semiconducting material blend under similar processing conditions.

公开(公告)号：EP1946390A4

公开(公告)日：2010-06-09

申请号：EP06826006

申请日：2006-10-16

申请人： MOTOROLA INC

发明人： ZHANG JIE ,  ADEWOLE HAKEEM B ,  BRAZIS PAUL W ,  COLLINS TIMOTHY J ,  GAMOTA DANIEL R ,  SZCZECH JOHN B ,  WIELGUS JERZY

IPC分类号： H01L35/24 ,  H01L21/336 ,  H01L49/02 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/0554 ,  H01L27/1292 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0004 ,  H01L51/0022

公开(公告)号：EP1949276A4

公开(公告)日：2009-11-11

申请号：EP06826540

申请日：2006-10-24

申请人： MOTOROLA INC

发明人： BRAZIS PAUL W ,  GAMOTA DANIEL R ,  KALYANASUNDARAM KRISHNA ,  ZHANG JIE

IPC分类号： H01L29/417

CPC分类号： H01L29/41733 ,  H01L27/1292 ,  H01L51/0022 ,  H01L51/055 ,  H01L51/102 ,  H01L2924/19043 ,  H01L2924/30105

公开(公告)号：EP1540734A4

公开(公告)日：2010-10-27

申请号：EP03763068

申请日：2003-06-03

申请人： MOTOROLA INC

发明人： ZHANG JIE ,  BRAZIS PAUL ,  GAMOTA DANIEL ,  KALANASUNDARAM KRISHNA ,  SCHEIFERS STEVEN ,  WIELGUS JERZY ,  CHOWDHURI ABHIJIT ROY

IPC分类号： H01L29/417 ,  H01L21/336 ,  H01L21/338 ,  H01L29/786 ,  H01L29/812 ,  H01L35/24 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L29/06

CPC分类号： H01L51/0516 ,  B82Y10/00 ,  H01L27/283 ,  H01L51/0024 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0046 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0078 ,  H01L51/0097 ,  H01L51/0512 ,  H01L51/0541 ,  H01L51/0545

公开(公告)号：EP1779412A4

公开(公告)日：2009-08-05

申请号：EP05760423

申请日：2005-06-09

申请人： MOTOROLA INC

发明人： ADEWOLE HAKEEM B ,  BRAZIS PAUL W ,  GAMOTA DANIEL R ,  WIELGUS JERZY ,  ZHANG JIE

IPC分类号： H01L21/00 ,  B41J2/175

CPC分类号： H01L51/0097 ,  H01L27/283 ,  H01L51/0004 ,  Y02E10/549

摘要： Two or more semiconductor devices (21 and 22) are formed on a substrate (20) and are each comprised of a plurality of printed components (23 and 24). At least one such printed component (25) is shared by both such semiconductor devices.

公开(公告)号：EP2050090A4

公开(公告)日：2010-08-11

申请号：EP07812141

申请日：2007-06-14

申请人： MOTOROLA INC

发明人： JONNALAGADDA KRISHNA D ,  CHASON MARC K ,  GAMOTA DANIEL R ,  ZHANG JIE

IPC分类号： G09G3/30 ,  G09G3/06 ,  G09G3/12

CPC分类号： H05B33/06

公开(公告)号：EP1472744A4

公开(公告)日：2010-03-10

申请号：EP02794299

申请日：2002-12-18

申请人： MOTOROLA INC

发明人： SCHEIFERS STEVEN M ,  GAMOTA DANIEL R ,  BRAZIS PAUL W JR ,  ZHANG JIE ,  LACH LAWRENCE E

IPC分类号： H01L21/316 ,  H01L29/76 ,  H01L35/24 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0512 ,  H01L21/31683 ,  H01L51/0021 ,  H01L51/0545

摘要： A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

公开(公告)号：EP1461832A4

公开(公告)日：2008-04-30

申请号：EP02784615

申请日：2002-11-25

申请人： MOTOROLA INC

发明人： LACH LAWRENCE E ,  SCHEIFERS STEVEN M ,  ZHANG JIE ,  GAMOTA DANIEL R ,  BRAZIS PAUL W JR

IPC分类号： H01L21/28 ,  H01L21/338 ,  H01L29/417 ,  H01L29/812 ,  H01L51/00 ,  H01L51/05 ,  H01L51/40 ,  H01L27/00

CPC分类号： H01L51/0508 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0021

摘要： A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.