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1.发明公开Manufacturing method of a nitride semiconductor device 审中-公开Herstellungsverfahrenfüreine Nitrid-Halbleitervorrichtung
公开(公告)号：EP1244141A1
公开(公告)日：2002-09-25
申请号：EP02011557.2
申请日：1999-09-10
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
摘要： A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
摘要翻译： 半导体器件包括：晶体衬底，其包括主表面和设置在主表面内的晶面，以便具有不同于主表面的表面取向的表面取向; 在晶体衬底上生长的半导体层状结构; 以及设置在半导体层结构的在晶面以上的部分的有源区。
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2.发明公开
公开(公告)号：EP1091422A3
公开(公告)日：2007-10-10
申请号：EP00121878.3
申请日：2000-10-06
CPC分类号： C30B25/183 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02516 , H01L21/0254 , H01L33/025 , H01L33/20 , H01L33/32 , H01S5/0207 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32341
摘要： Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression or a projection having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression or outside face of the projection.
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3.发明授权
公开(公告)号：EP1045431B1
公开(公告)日：2003-08-27
申请号：EP00107908.6
申请日：2000-04-13
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/02661 , H01L21/02664 , H01L31/184 , H01L31/1852 , Y02E10/544 , Y02P70/521
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4.发明公开Semiconductor device and method of fabricating the same 审中-公开Halbleitervorrichtung und Herstellungsverfahren
公开(公告)号：EP1032099A3
公开(公告)日：2005-11-16
申请号：EP00103996.5
申请日：2000-02-25
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L33/0079 , H01S5/32341
摘要： A semiconductor device comprises a substrate having a first thermal expansion coefficient T1, a strain reducing layer formed on the substrate and having a second thermal expansion coefficient T2, and a semiconductor layer formed on the strain reducing layer, having a third thermal expansion coefficient T3, and made of a nitride compound represented by Al y Ga 1-y-z In z N (0 ≦ y ≦ 1, 0 ≦ z ≦ 1). The second thermal expansion coefficient T2 is lower than the first thermal expansion coefficient T1. The third thermal expansion coefficient T3 is lower than the first thermal expansion coefficient T1 and higher than the second thermal expansion coefficient T2.
摘要翻译： 半导体器件包括具有第一热膨胀系数T1的基板，形成在基板上并具有第二热膨胀系数T2的应变减小层，以及形成在应变减小层上的具有第三热膨胀系数T3的半导体层， 并由由Al y Ga 1-y-z In z N（0≤y≤1,0≤z≤1）表示的氮化物组成。 第二热膨胀系数T2低于第一热膨胀系数T1。 第三热膨胀系数T3比第一热膨胀系数T1低，高于第二热膨胀系数T2。
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公开(公告)号：EP1130723A3
公开(公告)日：2004-03-24
申请号：EP01301871.8
申请日：2001-03-01
发明人： Orita, Kenji , Mochida, Atsunori , Yuri, Masaaki
CPC分类号： H01S5/12 , H01S5/209 , H01S5/2231 , H01S5/32316
摘要： The invention provides a semiconductor laser device including an active layer, a semiconductor layer provided with a diffraction grating, an etch-stop layer, a cladding layer provided with a stripe structure, and a current blocking layer arranged at least on a side of said stripe structure, formed in that order on a substrate. In this semiconductor laser device, the etching-stop layer is formed on the semiconductor layer with the diffraction grating, so that damage of the diffraction grating due to etching can be prevented. The invention also provides a distributed Bragg reflection semiconductor laser device, including an active layer, and a current blocking layer having a stripe-shaped window and a diffraction grating formed at least near an end face thereof. This semiconductor laser device can be manufactured with fewer crystal growth processes than conventional semiconductor laser devices.
摘要翻译： 本发明提供一种半导体激光装置，其包括有源层，设置有衍射光栅的半导体层，蚀刻停止层，设置有条纹结构的包覆层以及设置在所述条纹的至少一侧上的电流阻挡层 结构，以此顺序形成在基底上。 在该半导体激光器件中，在具有衍射光栅的半导体层上形成蚀刻停止层，从而可以防止由于蚀刻导致的衍射光栅的损坏。 本发明还提供一种分布式布拉格反射半导体激光装置，其包括有源层和具有至少在其端面附近形成的带状窗口和衍射光栅的电流阻挡层。 该半导体激光装置可以用比传统半导体激光装置更少的晶体生长工艺来制造。
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6.发明公开Semiconductor laser device and method for manufacturing the same 审中-公开Halbleiterlaservorrichtung und Herstellungsverfahren
公开(公告)号：EP1130723A2
公开(公告)日：2001-09-05
申请号：EP01301871.8
申请日：2001-03-01
发明人： Orita, Kenji , Mochida, Atsunori , Yuri, Masaaki
CPC分类号： H01S5/12 , H01S5/209 , H01S5/2231 , H01S5/32316
摘要： The invention provides a semiconductor laser device including an active layer, a semiconductor layer provided with a diffraction grating, an etch-stop layer, a cladding layer provided with a stripe structure, and a current blocking layer arranged at least on a side of said stripe structure, formed in that order on a substrate. In this semiconductor laser device, the etching-stop layer is formed on the semiconductor layer with the diffraction grating, so that damage of the diffraction grating due to etching can be prevented. The invention also provides a distributed Bragg reflection semiconductor laser device, including an active layer, and a current blocking layer having a stripe-shaped window and a diffraction grating formed at least near an end face thereof. This semiconductor laser device can be manufactured with fewer crystal growth processes than conventional semiconductor laser devices.
摘要翻译： 本发明提供一种半导体激光器件，其包括有源层，设置有衍射光栅的半导体层，蚀刻停止层，设置有条纹结构的覆层，以及至少设置在所述条纹侧的电流阻挡层 结构，在基板上依次形成。 在该半导体激光器件中，利用衍射光栅在半导体层上形成蚀刻停止层，从而可以防止由蚀刻导致的衍射光栅的损伤。 本发明还提供一种分布式布拉格反射半导体激光器件，其包括有源层，以及具有条状窗口的电流阻挡层和至少形成在其端面附近的衍射光栅。 该半导体激光器件可以制造成比常规半导体激光器件更少的晶体生长工艺。
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公开(公告)号：EP0997996B1
公开(公告)日：2006-11-22
申请号：EP99120838.0
申请日：1999-10-25
发明人： Nakamura, Shinji , Yuri, Masaaki , Orita, Kenji
IPC分类号： H01S5/323
CPC分类号： H01L33/32 , H01L33/007 , H01S5/32341
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公开(公告)号：EP0993048B1
公开(公告)日：2002-11-06
申请号：EP99117485.5
申请日：1999-09-10
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
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