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1.发明公开Manufacturing method of a nitride semiconductor device 审中-公开Herstellungsverfahrenfüreine Nitrid-Halbleitervorrichtung
公开(公告)号：EP1244141A1
公开(公告)日：2002-09-25
申请号：EP02011557.2
申请日：1999-09-10
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
摘要： A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
摘要翻译： 半导体器件包括：晶体衬底，其包括主表面和设置在主表面内的晶面，以便具有不同于主表面的表面取向的表面取向; 在晶体衬底上生长的半导体层状结构; 以及设置在半导体层结构的在晶面以上的部分的有源区。
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2.发明公开Semiconductor device and method of fabricating the same 审中-公开Halbleitervorrichtung und Herstellungsverfahren
公开(公告)号：EP1032099A3
公开(公告)日：2005-11-16
申请号：EP00103996.5
申请日：2000-02-25
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L33/0079 , H01S5/32341
摘要： A semiconductor device comprises a substrate having a first thermal expansion coefficient T1, a strain reducing layer formed on the substrate and having a second thermal expansion coefficient T2, and a semiconductor layer formed on the strain reducing layer, having a third thermal expansion coefficient T3, and made of a nitride compound represented by Al y Ga 1-y-z In z N (0 ≦ y ≦ 1, 0 ≦ z ≦ 1). The second thermal expansion coefficient T2 is lower than the first thermal expansion coefficient T1. The third thermal expansion coefficient T3 is lower than the first thermal expansion coefficient T1 and higher than the second thermal expansion coefficient T2.
摘要翻译： 半导体器件包括具有第一热膨胀系数T1的基板，形成在基板上并具有第二热膨胀系数T2的应变减小层，以及形成在应变减小层上的具有第三热膨胀系数T3的半导体层， 并由由Al y Ga 1-y-z In z N（0≤y≤1,0≤z≤1）表示的氮化物组成。 第二热膨胀系数T2低于第一热膨胀系数T1。 第三热膨胀系数T3比第一热膨胀系数T1低，高于第二热膨胀系数T2。
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公开(公告)号：EP1195864A3
公开(公告)日：2004-11-10
申请号：EP01123682.5
申请日：2001-10-02
CPC分类号： H01S5/32308 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/2206 , H01S5/221 , H01S5/2231 , H01S5/3213
摘要： A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Al x1 Ga 1-x1 As and a p-type cladding layer of (Al x Ga 1-x ) y In 1-y P for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.
摘要翻译： 半导体激光装置在有源层的顶部包括用于限定势垒高度的Alx1Ga1-x1As的n型包覆层和（AlxGa1-x）yIn1-yP的p型包覆层。 用于限定势垒高度的p型覆层包含比n型覆层更多的组分元素。 用于限定势垒高度的p型包覆层的导带边缘与有源层之间的电势差大于n型包覆层和有源层的导带边缘之间的电势差。 防止有源层中的载流子溢出到p型覆层中，并且将具有高热导率的材料用于n型覆层以防止热饱和现象，由此提供改善的光输出。
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4.发明公开Semiconductor substrate, semiconductor device and method of manufacturing the same 失效半导体衬底，半导体器件及其制造方法
公开(公告)号：EP0871228A3
公开(公告)日：2001-10-24
申请号：EP98106483.5
申请日：1998-04-08
CPC分类号： H01L33/007 , B82Y20/00 , C30B25/18 , H01S5/0207 , H01S5/021 , H01S5/2231 , H01S5/3201 , H01S5/34333 , H01S2301/173
摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In 0.2 Ga 0.8 N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.
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5.发明公开
公开(公告)号：EP1091422A3
公开(公告)日：2007-10-10
申请号：EP00121878.3
申请日：2000-10-06
CPC分类号： C30B25/183 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02516 , H01L21/0254 , H01L33/025 , H01L33/20 , H01L33/32 , H01S5/0207 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32341
摘要： Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression or a projection having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression or outside face of the projection.
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6.发明授权
公开(公告)号：EP1045431B1
公开(公告)日：2003-08-27
申请号：EP00107908.6
申请日：2000-04-13
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/02661 , H01L21/02664 , H01L31/184 , H01L31/1852 , Y02E10/544 , Y02P70/521
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公开(公告)号：EP0993048B1
公开(公告)日：2002-11-06
申请号：EP99117485.5
申请日：1999-09-10
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
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公开(公告)号：EP1195864A2
公开(公告)日：2002-04-10
申请号：EP01123682.5
申请日：2001-10-02
CPC分类号： H01S5/32308 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/2206 , H01S5/221 , H01S5/2231 , H01S5/3213
摘要： A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Al x1 Ga 1-x1 As and a p-type cladding layer of (Al x Ga 1-x ) y In 1-y P for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.
摘要翻译： 半导体激光器件在有源层的顶部上包括Al x Ga 1-x AsAs的n型包覆层和（Al x Ga 1-x）y In 1-y P的p型包覆层，用于限定势垒高度。 用于限定势垒高度的p型覆层具有比n型覆层更多的构成要素。 用于限定势垒高度的p型覆层的导带边缘与有源层之间的电位差大于n型覆层和有源层的导带边缘之间的电位差。 有源层中的载流子被阻止溢出到p型包覆层中，并且n型包覆层使用具有高热导率的材料以防止热饱和现象，从而提供改善的光输出。
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