公开(公告)号：EP3167261A4

公开(公告)日：2018-03-07

申请号：EP15819299

申请日：2015-07-07

Applicant: NAT UNIV SINGAPORE

Inventor： ÖZYILMAZ BARBAROS ,  KULKARNI EESHAN SANDEEP ,  HEUSSLER SASCHA PIERRE ,  CASTRO NETO ANTONIO HELIO ,  ANDERSEN HENRIK

IPC: G01J5/02 ,  G01J5/04 ,  G01J5/10 ,  G06F3/01 ,  G06F3/041 ,  H01L37/02

CPC classification number: G06F3/041 ,  G01J5/02 ,  G01J5/046 ,  G01J5/10 ,  G01J5/20 ,  G01J5/34 ,  G06F3/01 ,  G06F3/03 ,  G06F3/0412 ,  G06F2203/04102 ,  G06F2203/04108 ,  H01L37/02

Abstract: A version of the invention comprises a device for controlling or interfacing with a computer or other form of communicable machine based on the pyroelectric effect, and includes at least one optically- and infrared- (IR-) transparent graphene electrode.

公开(公告)号：EP3031072A4

公开(公告)日：2017-04-19

申请号：EP14835353

申请日：2014-07-31

Applicant: NAT UNIV SINGAPORE

Inventor： LOH KIAN PING ,  GAO LIBO ,  CASTRO NETO ANTONIO HELIO

IPC: H01L21/20 ,  C23C16/02 ,  C23C16/26 ,  H01L29/786

CPC classification number: C01B32/194 ,  C01B31/0453 ,  C01B32/186 ,  C23C16/01 ,  C23C16/0263 ,  C23C16/0281 ,  C23C16/26 ,  C30B23/02 ,  C30B29/225 ,  C30B29/26 ,  H01L21/02002 ,  H01L21/02107 ,  H01L21/02326 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/02694 ,  H01L21/3205 ,  H01L29/1606 ,  H01L29/78684 ,  H01L39/2422

Abstract: A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

Abstract translation: 原位转移上的基底，其包括二维晶体薄膜组件的制造过程中的方法，是游离缺失盘。 在一个，实施例的方法包括：形成分层结构，其包括聚合物，二维结晶性薄膜，金属催化剂和底物。 金属催化剂，是用于二维晶体薄膜的生长培养基中，通过渗透液以使原位传递二维结晶性薄膜直接的下面的衬底走上蚀刻并去除。

公开(公告)号：EP3102538A4

公开(公告)日：2017-11-15

申请号：EP15746334

申请日：2015-02-04

Applicant: NAT UNIV SINGAPORE

Inventor： OZYILMAZ BARBAROS ,  STIER ANDREAS VOLKER ,  TOH CHEE TAT ,  CASTRO NETO ANTONIO HELIO

IPC: C01B32/186 ,  B82B3/00 ,  B82Y40/00 ,  C01B32/188 ,  C30B1/02 ,  C30B25/10 ,  C30B25/18 ,  C30B29/02

CPC classification number: C30B25/105 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/188 ,  C30B1/02 ,  C30B25/18 ,  C30B29/02

Abstract: A method of making graphene includes providing a seed gas in the presence of a metallic substrate, providing a pulsed, ultraviolet laser beam, and moving the substrate or the laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. In some instances, the substrate can have a surface with two-fold atomic symmetry. A method of recrystallizing graphene includes providing a pulsed, ultraviolet laser beam to a polycrystalline graphene sheet.

公开(公告)号：EP3087405A4

公开(公告)日：2017-09-06

申请号：EP14874834

申请日：2014-12-26

Applicant: NAT UNIV SINGAPORE

Inventor： KALON GOPINADHAN ,  YANG HYUNSOO ,  SHIN YOUNG JUN ,  CASTRO NETO ANTONIO HELIO

IPC: G01R33/09 ,  B82Y25/00

CPC classification number: G01R33/09 ,  B82Y25/00 ,  H01F10/005

Abstract: A graphene structure is provided. The graphene structure comprises a substrate layer and at least two graphene layers disposed on the substrate. The at least two graphene layers comprises a gate voltage tuned layer and an effective graphene layer and the effective graphene layer comprises one or more graphene layers. A magnetoresistance ratio of the graphene structure is determined by a difference in a charge mobility and/or a carrier density between the gate voltage tuned layer and the effective graphene layer. The charge mobility and/or the carrier density of the gate no voltage tuned layer is tunable by a gate voltage applied to the graphene structure. A magnetic field sensor comprising the graphene structure is also provided.

Abstract translation: 提供石墨烯结构。 石墨烯结构包括衬底层和设置在衬底上的至少两个石墨烯层。 所述至少两个石墨烯层包括栅极电压调谐层和有效石墨烯层，并且所述有效石墨烯层包括一个或多个石墨烯层。 石墨烯结构的磁阻比由栅电压调谐层和有效石墨烯层之间的电荷迁移率和/或载流子密度的差值确定。 栅极无电压调谐层的电荷迁移率和/或载流子密度可通过施加到石墨烯结构的栅极电压来调节。 还提供了包含石墨烯结构的磁场传感器。