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    Silicon nitride sintered body and method of producing the same
    1.
    发明公开
    Silicon nitride sintered body and method of producing the same 有权
    Siliciumnitridsinterkörperund Verfahren zum Herstellen desselben

    公开(公告)号：EP1063211A1

    公开(公告)日：2000-12-27

    申请号：EP00305226.3

    申请日：2000-06-20

    Applicant: NGK INSULATORS, LTD.

    Inventor： Araki, Kiyoshi ,  Inoue, Katsuhiro

    IPC: C04B35/593 ,  H01L21/48 ,  H01L23/15

    CPC classification number: C04B35/5935 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H01L2924/00

    Abstract: A method of producing the silicon nitride sintered body includes the steps of molding materials having silicon nitride powder, a Mg component and a sintering aid, and sintering the materials at 1,800 to 2,000°C under a nitrogen atmosphere. The materials are prepared so as to include Mg at 0.3 to 10 wt.% in terms of oxide, and after a constant temperature is kept for 0.5 hours or longer in a temperature range of 1,400 to 1,700°C, the temperature is increased to a sintering temperature. A silicon nitride having high thermal conductivity and excellent electric insulation properties at high temperature can be provided.

    Abstract translation: 一种氮化硅烧结体的制造方法，其特征在于，具有氮化硅粉末，Mg成分和烧结助剂的成型材料，在氮气气氛下在1800〜2000℃下烧结。 该材料制备成以氧化物换算为0.3〜10重量％的Mg，在1400〜1700℃的温度范围内将恒温保持0.5小时以上后，升温至 烧结温度。 可以提供具有高导热性和高温下优异的电绝缘性能的氮化硅。

    Silicon nitride sintered material and process for production thereof
    5.
    发明公开
    Silicon nitride sintered material and process for production thereof 失效
    Siliciumnitrid-Sinterwerkstoff und Verfahren zur Herstellung davon

    公开(公告)号：EP0825162A1

    公开(公告)日：1998-02-25

    申请号：EP97306249.0

    申请日：1997-08-18

    Applicant: NGK INSULATORS, LTD.

    Inventor： Aihara, Yasufumi ,  Inoue, Katsuhiro

    IPC: C04B35/593 ,  C04B41/00 ,  C04B41/87

    CPC classification number: C04B41/009 ,  C04B35/5935 ,  C04B41/0072 ,  C04B41/5035 ,  C04B41/80 ,  C04B41/87 ,  C04B41/4519 ,  C04B41/4556 ,  C04B35/584

    Abstract: A silicon nitride sintered material includes silicon nitride and rare earth element compounds. Y and Yb are contained as the rare earth elements in a total amount of 5-7 mole % in terms of oxides, Yb/Y is 4/6 to 9/1 in terms of molar ratio of oxides, and the crystal phases of grain boundary contain a H phase and a J phase with the proportion of the H phase being larger than that of the J phase. A process for producing a silicon nitride sintered material includes the steps of mixing a Si 3 N 4 powder with Y 2 O 3 and Yb 2 O 3 both as a sintering aid, the total amount of Y 2 O 3 and Yb 2 O 3 being 5-7 mole % and the molar ratio of Yb 2 O 3 /Y 2 O 3 being 4/6 to 9/1, molding the resulting mixture, sintering the molded material in a nitrogen atmosphere at 1,850-1,950°C, and heat-treating the sintered material in air at 1,000-1,500°C for 0.5-10 hours. The silicon nitride sintered material has, in a small or large thickness, oxidation resistance and strength at low temperatures while retaining high strength at high temperatures.

    Abstract translation: 氮化硅烧结材料包括氮化硅和稀土元素化合物。 Y和Yb作为稀土元素以氧化物换算为5-7摩尔％，Yb / Y按氧化物的摩尔比计为4/6〜9/1，晶粒的晶相 边界含有H相和J相，H相的比例大于J相的比例。 制造氮化硅烧结体的方法包括以下步骤：将Si 3 N 4粉末与Y 2 O 3和Yb 2 O 3作为烧结助剂混合，Y2O3和Yb2O3的总量为5-7摩尔％，Yb2O3 / Y2O3的摩尔比为4 / 6〜9/1，将得到的混合物成型，在氮气气氛中，在1,850-1,950℃下烧结成型材料，在1000-1500℃的空气中将烧结材料热处理0.5-10小时。 氮化硅烧结材料在低温下具有小的或较大的抗氧化性和强度，同时在高温下保持高强度。

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