公开(公告)号：EP1569269A4

公开(公告)日：2007-10-24

申请号：EP03723368

申请日：2003-05-14

申请人： NIPPON MINING CO

发明人： NAKAMURA MASASHI ,  KURITA HIDEKI

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L21/302 ,  H01L21/31

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02543 ,  H01L21/302

摘要： An epitaxial growing method for growing a compound semiconductor layer (for example, a III-V compound semiconductor layer such as an InGaAs layer, an AlGaAs layer, an AlInAs layer, or an AlInGaAs layer) comprising three or four elements on a substrate (for example, an InP substrate) for growth held by a substrate support by an organic metal vapor phase deposition method, wherein the whole effective use region of the substrate is so polished that the angel of inclination with respect to the (100)-direction lies in the range from 0.00° to 0.03° or from 0.04° to 0.24°, and the compound semiconductor layer with a thickness of 0.5 mum or more is formed on the substrate for growth.

公开(公告)号：EP1743961A4

公开(公告)日：2009-04-01

申请号：EP05719126

申请日：2005-02-15

申请人： NIPPON MINING CO

发明人： SUZUKI KENJI ,  HIRANO RYUICHI ,  NAKAMURA MASASHI

IPC分类号： C30B29/40 ,  C30B25/18 ,  H01L21/205

CPC分类号： C30B29/40 ,  C30B25/18

摘要： A substrate for epitaxial growth capable of improving the surface state of an epitaxial layer on the level of micro-roughness. In the substrate for epitaxial growth, intensity of scattering light obtained when light from a specified light source comes onto the surface of the substrate is divided by the intensity of incident light from the light source and the quotient is defined as haze. The haze is set at 2 ppm or less over the entire effective available region of the substrate and the off angle is set in the range of 0.05-0.10 degrees.

公开(公告)号：EP1717846A4

公开(公告)日：2009-05-27

申请号：EP05719124

申请日：2005-02-15

申请人： NIPPON MINING CO

发明人： NAKAMURA MASASHI ,  OOTA SUGURU ,  HIRANO RYUICHI

IPC分类号： H01L21/203 ,  C23C14/54 ,  C30B23/02 ,  C30B23/08 ,  C30B25/02 ,  C30B29/40

CPC分类号： H01L21/02658 ,  C30B23/002 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631

摘要： A vapor-phase deposition method for growing an epitaxial layer of a compound semiconductor such as InAlAs on a semiconductor substrate of, e.g., Fe-doped InP with good reproducibility. In the vapor-phase deposition method, the resistivity of the semiconductor substrate at the room temperature is previously measured, the set temperature of the substrate is controlled according to the resistivity at the room temperature so that the actual surface temperature of the substrata may be a desired one independently of the resistivity of the semiconductor substrate, and the epitaxial layer is grown.

公开(公告)号：EP1480260A4

公开(公告)日：2008-10-08

申请号：EP02775533

申请日：2002-11-12

申请人： NIPPON MINING CO

发明人： SASAKI SHINICHI ,  NAKAMURA MASASHI ,  SATO KENJI

IPC分类号： C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  C23C16/34 ,  C30B29/40

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S148/113

摘要： A method for growing a crystal for example, a GaN compound semiconductor crystal on a substrate, comprising the steps of forming a first crystal layer GaN buffer layer, a second crystal layer GaN intermediate layer, and a third crystal layer GaN thick-film layer. In the three steps, the crystal layers are formed under different conditions, respectively.