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10 条记录 (耗时 0.016 秒)

    MAGNETIC DIGITAL SIGNAL COUPLER
    2.
    发明授权
    MAGNETIC DIGITAL SIGNAL COUPLER 有权
    数字磁信号耦合器

    公开(公告)号：EP1068541B1

    公开(公告)日：2006-10-04

    申请号：EP99909863.5

    申请日：1999-03-04

    申请人： NVE Corporation

    发明人： DAUGHTON, James, M. ,  FAYFIELD, Robert, T. ,  HERMANN, Theodore, M. ,  STOKES, John, F.

    IPC分类号： G01R33/00

    CPC分类号： G01R15/205 ,  H01L2224/48137 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H04B5/00 ,  H04B5/0043 ,  H04B5/005

    摘要： A current determiner having an output at which representations of input currents are provided comprising an input conductor for the input current and a current sensor (23) supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction at an angle to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers (16, 17) separated by a nonmagnetic layer (18) with one of these two ferromagnetic thin-film layers (16, 17) having a magnetization that is substantially maintained in selected directions. This first current sensor is spaced apart from the input conductor at least in part by a polymeric electrical insulating material (27), and the input conductor can be provided on a mechanically stiff base supported on such material and provided with an electric field interrupter (26) supporting such material between the first current sensor and the input conductor. The sensor can be electrically connected to an electronic circuitry formed in the substrate as a monolithic integrated circuit sharing a common reference, and two such monolithic integrated chips in a housing can provide duplex information signal transmission.

    CIRCUIT SELECTION OF MAGNETIC MEMORY CELLS AND RELATED CELL STRUCTURES
    6.
    发明公开
    CIRCUIT SELECTION OF MAGNETIC MEMORY CELLS AND RELATED CELL STRUCTURES 有权
    磁存储电池和蜂窝结构的电路选择

    公开(公告)号：EP1314152A1

    公开(公告)日：2003-05-28

    申请号：EP01964110.9

    申请日：2001-08-16

    申请人： NVE Corporation

    发明人： DAUGHTON, James, M. ,  POHM, Arthur, V.

    IPC分类号： G11B5/00

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16

    摘要： A ferromagnetic thin-film based digital memory having a plurality of bit structures interconnected with manipulation circuitry having a plurality of transistors so that each bit structure has transistors electrically coupled thereto that selectively substantially prevents current in at least one direction along a current path through that bit structure and permits selecting a direction of current flow (Ixm-1, Ixm, Ixm+1, Iyn, Iyn+1) through the bit structure if current is permitted to be established therein. A bit structure has a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof and a memory film of an anisotropic ferromagnetic material on each of the intermediate layer major surfaces with an electrically insulative intermediate layer is provided on the memory film on which a magnetization reference layer is provided having a fixed magnetization direction.

    MAGNETORESISTIVE STRUCTURE WITH ALLOY LAYER
    9.
    发明授权
    MAGNETORESISTIVE STRUCTURE WITH ALLOY LAYER 失效
    与合金层磁阻结构

    公开(公告)号：EP0809866B1

    公开(公告)日：2006-05-03

    申请号：EP96905384.2

    申请日：1996-02-06

    申请人： NVE Corporation

    发明人： DAUGHTON, James, M.

    IPC分类号： H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3945 ,  G11B5/3948 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/325 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive layered structure having on a substrate (10) two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate (10) of less than 50 Angstroms thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses. The magnetic material mass being used for shielding can be divided into two masses with one of those masses farthest from the gap serving as the shield.

    MAGNETIC MEMORY COINCIDENT THERMAL PULSE DATA STORAGE
    10.
    发明公开
    MAGNETIC MEMORY COINCIDENT THERMAL PULSE DATA STORAGE 有权
    磁存储器简介热脉冲数据存储

    公开(公告)号：EP1196925A1

    公开(公告)日：2002-04-17

    申请号：EP00947641.7

    申请日：2000-06-16

    申请人： NVE Corporation

    发明人： DAUGHTON, James, M. ,  POHM, Arthur, V.

    IPC分类号： G11C13/00

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  G11C11/1675 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  H01L27/222

    摘要： A ferromagnetic thin-film based digital memory (Fig.1) having in a bit structure (17, 17') a coupled moment material film (13, 14, 14', 14'') in which magnetic moments of adjacent atoms, ions or molecules are coupled to one another to maintain some alignment thereof below a critical temperature above which such alignment is not maintained, and also having a plurality of word line structures (20) each located across from the coupled moment material film (13, 14, 14', 14'') in a corresponding one of the bit structures (17, 17'). The bit structures (17, 17') are sufficiently thermally isolated to allow currents in the adjacent word lines (20) and/or the bit structure (17, 17') to heat the bit structure (17, 17') to approach the critical temperature which may be supplied coincidently and then reduced to cool the bit structure (17, 17') while supplying a magnetic field during the cooling.

    摘要翻译： 一种基于铁磁薄膜的数字存储器（图1）具有位结构（17,17'）的耦合力矩材料薄膜（13,14,14'，14“），其中相邻原子的磁矩，离子 或分子彼此耦合以保持其一定的对准低于临界温度，在所述临界温度以上不维持这种对准，并且还具有多个字线结构（20），每个字线结构位于耦合的力矩材料膜（13,14， （17,17'）中的相应的一个位结构中。 位结构（17,17'）被充分热隔离以允许相邻字线（20）和/或位结构（17,17'）中的电流加热位结构（17,17'）以接近 临界温度可重合地提供，然后减小以冷却钻头结构（17,17'），同时在冷却期间供应磁场。