公开(公告)号：EP2093793A2

公开(公告)日：2009-08-26

申请号：EP09250234.3

申请日：2009-01-28

申请人： Renesas Technology Corp.

发明人： Muto, Akira c/o Renesas Technology Corp., IP Property Div. ,  Koike, Nobuya c/o Renesas Technology Corp., IP Property Div. ,  Arai, Katsuo c/o Renesas Technology Corp., IP Property Div. ,  Fujiki, Atsushi c/o Renesas Technology Corp., IP Property Div.

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L21/565 ,  H01L23/3107 ,  H01L23/433 ,  H01L23/4334 ,  H01L23/49537 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/33 ,  H01L24/36 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/83 ,  H01L25/115 ,  H01L25/117 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29499 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/40247 ,  H01L2224/4899 ,  H01L2224/73263 ,  H01L2224/83051 ,  H01L2224/83101 ,  H01L2224/83139 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/83885 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2225/1029 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/07025 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099 ,  H01L2224/37599

摘要： The radiation performance of a resin sealed semiconductor package is enhanced and further the fabrication yield thereof is enhanced. A drain terminal coupled to the back surface drain electrode of a semiconductor chip is exposed at the back surfaceof an encapsulation resin section. Part of the following portion and terminal is exposed at the top surface of the encapsulation resin section: the first portion of a source terminal coupled to the source pad electrode of the semiconductor chip and a gate terminal coupled to the gate pad electrode of the semiconductor chip. The remaining part of the second portion of the source terminal and the gate terminal is exposed at the back surface of the encapsulation resin section. When this semiconductor device is manufactured, bonding material and a film member are placed between the drain terminal and the semiconductor chip. At the same time, paste-like bonding material and a film member are placed between the source terminal 3 and gate terminal and the semiconductor chip. The paste-like bonding material is cured and turned into bonding material. As the result of use of the film members, variation in the thickness of the bonding material is suppressed.

摘要翻译： 提高树脂密封半导体封装的放射性能，进一步提高其制造成品率。 耦合到半导体芯片的背表面漏电极的漏极端子在封装树脂部分的背面露出。 以下部分和端子的一部分暴露在封装树脂部分的顶表面处：耦合到半导体芯片的源极焊盘电极的源极端子的第一部分和耦合到半导体芯片的栅极焊盘电极的栅极端子 。 源极端子和栅极端子的第二部分的剩余部分在封装树脂部分的背面露出。 当制造该半导体器件时，将接合材料和膜部件置于漏极端子和半导体芯片之间。 同时，在源极端子3和栅极端子与半导体芯片之间放置糊状接合材料和膜部件。 糊状结合材料固化并变成粘结材料。 作为使用膜构件的结果，抑制了接合材料的厚度的变化。