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公开(公告)号：EP1435111B1
公开(公告)日：2010-12-08
申请号：EP02785528.7
申请日：2002-10-08
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , S.O.I.Tec Silicon on Insulator Technologies
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L2221/68322
摘要： The invention concerns a method for making (1) thin layers (5) containing microcomponents (6) using a substrate. Said method comprises in particular, for each layer (5), the following steps: a) local implantation of at least a gaseous species in said substrate (1) perpendicular to a plurality of implantation zones defined on the surface of the substrate (1), avoiding, by adequate selection of the depth and the shape of said implantation zones, degradation of said surface of the substrate (1) during the step b); b) producing microcomponents (6) in the surface layer (5) of the substrate (1) delimited by the implanting depth; and c) separating the substrate (1) in two parts, one part containing the surface layer (5) including said microcomponents (6), and the other the rest of the substrate (1). The invention is useful for producing microcomponents to be integrated on supports different from those used for their manufacture.
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公开(公告)号：EP2232534A1
公开(公告)日：2010-09-29
申请号：EP09702323.8
申请日：2009-01-16
发明人： LAGAHE, Chrystelle , ASPAR, Bernard
CPC分类号： H01L22/12 , H01L21/2007
摘要： The invention concerns a process of preparing a thin layer to be transferred onto a substrate (8) having a surface topology, and therefore variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation, on the thin layer, of a layer (4) of adhesive material, the thickness of which enables to carry out a plurality of polishing steps of its surface in order to eliminate any defect or void (24, 26), or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate (8).
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公开(公告)号：EP1543553B1
公开(公告)日：2011-02-09
申请号：EP03763890.5
申请日：2003-07-16
申请人： S.O.I.Tec Silicon on Insulator Technologies , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
IPC分类号： H01L21/762 , H01L21/20 , H01L21/18 , H01L21/304
CPC分类号： H01L21/76259 , H01L21/76254
摘要： The invention concerns a method for transferring a layer of material (41) deriving from a source substrate (4) onto a support substrate (5), comprising at least the steps consisting in : depositing additional material (6) on at least one of the front faces of the source substrate (4) and the support substrate (5) and applying said two substrates (4, 5) against each other; then detaching said layer to be transferred (41) from the source substrate (4) along a zone of weakness (43) by applying a stress of mechanical origin. This method is remarkable in that prior to the step of depositing the material (6), at least one recess (56) for receiving excess additional material (6) is formed in at least one of the two substrates (4, 5), said recess opening onto the front face of said substrate. Application to the fabrication of a composite substrate in the fields of electronics, optoelectronics and optics.
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公开(公告)号：EP1114446B1
公开(公告)日：2010-04-14
申请号：EP00948075.7
申请日：2000-06-29
IPC分类号： H01L21/20
CPC分类号： H01L21/2007
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公开(公告)号：EP2272084A2
公开(公告)日：2011-01-12
申请号：EP09742018.6
申请日：2009-04-30
IPC分类号： H01L21/18 , H01L27/146 , H01L25/065 , H01L21/98
CPC分类号： H01L21/76256 , C03C27/00 , H01L21/187 , H01L25/0657 , H01L25/50 , H01L27/146 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： The invention concerns a method of bonding two wafers (20, 30) by molecular bonding in which a first propagation of a bonding wave initiated from a point of pressure (43) applied to at least one (30) of the two wafers is followed by a second propagation of the bonding wave over a zone covering the point of pressure (43). The second bonding wave propagation may be obtained by interposing a separating element (41) between the two wafers and by withdrawing the element at least after the start of the first bonding wave propagation or by partially unbonding the surfaces of the assembled wafers over a zone located in the vicinity of the point of pressure (63).
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公开(公告)号：EP1586115B1
公开(公告)日：2008-05-28
申请号：EP04704241.1
申请日：2004-01-22
IPC分类号： H01L21/762 , C09J5/00
CPC分类号： H01L21/76259 , C09J5/00 , H01L21/76254
摘要： The invention relates to a method of removing a peripheral zone (62) of adhesive while using a layer of adhesive (6) in the process of assembling and transferring a layer (41) of material coming from a source substrate (4) and placed on a support substrate (5). The method is remarkable in that it consists in bonding the two substrates (4 and 5) together by means of an intermediate layer of curable adhesive (6), in curing only that zone (61) of the layer of adhesive (6) which extends facing the front face (43) of said layer (41) of material to be transferred, in removing the zone (62) of non-cured adhesive, and in detaching said layer (41) to be transferred from the remainder (42) of the source substrate. The invention is applicable to fabricating a composite substrate in the fields of electronics, optoelectronics, or optics.
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公开(公告)号：EP1586115A1
公开(公告)日：2005-10-19
申请号：EP04704241.1
申请日：2004-01-22
IPC分类号： H01L21/762 , C09J5/00
CPC分类号： H01L21/76259 , C09J5/00 , H01L21/76254
摘要： The invention relates to a method of removing a peripheral zone (62) of adhesive while using a layer of adhesive (6) in the process of assembling and transferring a layer (41) of material coming from a source substrate (4) and placed on a support substrate (5). The method is remarkable in that it consists in bonding the two substrates (4 and 5) together by means of an intermediate layer of curable adhesive (6), in curing only that zone (61) of the layer of adhesive (6) which extends facing the front face (43) of said layer (41) of material to be transferred, in removing the zone (62) of non-cured adhesive, and in detaching said layer (41) to be transferred from the remainder (42) of the source substrate. The invention is applicable to fabricating a composite substrate in the fields of electronics, optoelectronics, or optics.
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公开(公告)号：EP1543553A1
公开(公告)日：2005-06-22
申请号：EP03763890.5
申请日：2003-07-16
IPC分类号： H01L21/762 , H01L21/20 , H01L21/18 , H01L21/304
CPC分类号： H01L21/76259 , H01L21/76254
摘要： The invention concerns a method for transferring a layer of material (41) deriving from a source substrate (4) onto a support substrate (5), comprising at least the steps consisting in : depositing additional material (6) on at least one of the front faces of the source substrate (4) and the support substrate (5) and applying said two substrates (4, 5) against each other; then detaching said layer to be transferred (41) from the source substrate (4) along a zone of weakness (43) by applying a stress of mechanical origin. This method is remarkable in that prior to the step of depositing the material (6), at least one recess (56) for receiving excess additional material (6) is formed in at least one of the two substrates (4, 5), said recess opening onto the front face of said substrate. Application to the fabrication of a composite substrate in the fields of electronics, optoelectronics and optics.
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公开(公告)号：EP1435111A1
公开(公告)日：2004-07-07
申请号：EP02785528.7
申请日：2002-10-08
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L2221/68322
摘要： The invention concerns a method for making (1) thin layers (5) containing microcomponents (6) using a substrate. Said method comprises in particular, for each layer (5), the following steps: a) local implantation of at least a gaseous species in said substrate (1) perpendicular to a plurality of implantation zones defined on the surface of the substrate (1), avoiding, by adequate selection of the depth and the shape of said implantation zones, degradation of said surface of the substrate (1) during the step b); b) producing microcomponents (6) in the surface layer (5) of the substrate (1) delimited by the implanting depth; and c) separating the substrate (1) in two parts, one part containing the surface layer (5) including said microcomponents (6), and the other the rest of the substrate (1). The invention is useful for producing microcomponents to be integrated on supports different from those used for their manufacture.
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公开(公告)号：EP2109582A1
公开(公告)日：2009-10-21
申请号：EP08702243.0
申请日：2008-01-10
IPC分类号： B81C1/00
CPC分类号： B81B3/001 , B81C1/00952 , B81C2201/115
摘要： The invention relates to a process for forming a semiconductor component with a buried rough interface comprising: a) the formation of a rough interface (22) of predetermined roughness R2 in a first semiconductor substrate (16), with: * the selection of a semiconductor substrate (16), presenting a surface (14) with roughness R1>R2, * a thermal oxidation step for this substrate until an oxide -semiconductor interface (22) of roughness R2 is obtained, b) preparation of the oxidized surface of this first semiconductor substrate in view of assembly with a second substrate, c) the assembly of the surface of the oxide and of the second substrate.
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