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    WAFER TEMPORARY BONDING METHOD AND THIN WAFER MANUFACTURING METHOD
    1.
    发明公开
    WAFER TEMPORARY BONDING METHOD AND THIN WAFER MANUFACTURING METHOD 有权
    VERFAHREN ZURTEMPORÄRENWAFERBINDUNG UNDDÜNNSCHICHTWAFERHERSTELLUNGSVERFAHREN

    公开(公告)号：EP3038148A1

    公开(公告)日：2016-06-29

    申请号：EP15201534.3

    申请日：2015-12-21

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： YASUDA, Hiroyuki ,  SUGO, Michihiro ,  TAGAMI, Shohei ,  TANABE, Masahito

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6836 ,  B24B37/30 ,  B32B7/06 ,  B32B7/12 ,  C09J7/29 ,  C09J183/04 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

    摘要： A method for temporarily bonding a wafer to a support via a temporary bonding arrangement is provided. The arrangement is a composite temporary adhesive layer consisting of a non-silicone thermoplastic resin layer (A) which is releasably bonded to the wafer, a thermosetting siloxane polymer layer (B) laid thereon, and a thermosetting siloxane-modified polymer layer (C) releasably bonded to the support. The method comprises the steps of providing a wafer laminate having a thermosetting silicone composition layer (B') formed on the resin layer (A) which has been formed on the wafer, providing a support laminate having a siloxane-containing composition layer (C') formed on the support, joining and heating layer (B') and layer (C') in vacuum for bonding and curing the layers together.

    摘要翻译： 提供了一种通过临时接合装置将晶片临时接合到支撑件的方法。 该布置是由可剥离地结合到晶片的非硅氧烷热塑性树脂层（A）和其上放置的热固性硅氧烷聚合物层（B）和热固性硅氧烷改性的聚合物层（C）组成的复合临时粘合剂层， 可释放地结合到支撑件。 该方法包括以下步骤：提供在已经形成在晶片上的树脂层（A）上形成的热固性硅氧烷组合物层（B'）的晶片层叠体，提供具有含硅氧烷的组合物层（C' ）在真空中形成在支撑体，接合和加热层（B'）和层（C'）上，用于将层粘合并固化在一起。

    WAFER TEMPORARY BONDING METHOD AND THIN WAFER MANUFACTURING METHOD
    3.
    发明授权
    WAFER TEMPORARY BONDING METHOD AND THIN WAFER MANUFACTURING METHOD 有权
    晶片临时粘接方法和薄晶片制造方法

    公开(公告)号：EP3038148B1

    公开(公告)日：2017-08-02

    申请号：EP15201534.3

    申请日：2015-12-21

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： YASUDA, Hiroyuki ,  SUGO, Michihiro ,  TAGAMI, Shohei ,  TANABE, Masahito

    IPC分类号： H01L21/683 ,  C09J7/02 ,  B24B37/30

    CPC分类号： H01L21/6836 ,  B24B37/30 ,  B32B7/06 ,  B32B7/12 ,  C09J7/29 ,  C09J183/04 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

    摘要： A method for temporarily bonding a wafer to a support via a temporary bonding arrangement is provided. The arrangement is a composite temporary adhesive layer consisting of a non-silicone thermoplastic resin layer (A) which is releasably bonded to the wafer, a thermosetting siloxane polymer layer (B) laid thereon, and a thermosetting siloxane-modified polymer layer (C) releasably bonded to the support. The method comprises the steps of providing a wafer laminate having a thermosetting silicone composition layer (B') formed on the resin layer (A) which has been formed on the wafer, providing a support laminate having a siloxane-containing composition layer (C') formed on the support, joining and heating layer (B') and layer (C') in vacuum for bonding and curing the layers together.

    摘要翻译： 提供了一种用于通过临时接合装置将晶片暂时接合到支撑件的方法。 该结构是由可释放地结合到晶片上的非有机硅热塑性树脂层（A），置于其上的热固性硅氧烷聚合物层（B）和热固性硅氧烷改性的聚合物层（C）组成的复合临时粘合剂层， 可释放地结合到支撑件。 该方法包括以下步骤：提供具有形成在已形成在晶片上的树脂层（A）上的热固性硅氧烷组合物层（B'）的晶片层压体，提供具有含硅氧烷的组合物层（C' ）形成在支撑体上，真空中的接合和加热层（B'）和层（C'）用于将这些层接合和固化在一起。

    WAFER WORKPIECE, PROVISIONAL ADHESIVE MATERIAL FOR WAFER WORKING, AND THIN WAFER MANUFACTURING METHOD
    4.
    发明公开
    WAFER WORKPIECE, PROVISIONAL ADHESIVE MATERIAL FOR WAFER WORKING, AND THIN WAFER MANUFACTURING METHOD 审中-公开
    WAFERWERKSTÜCK，VERFAHREN ZUR HERSTELLUNG EINESDÜNNENWAFERS，PROVISORISCHES HAFTMATERIAL ZUR WAFERBEARBEITUNG

    公开(公告)号：EP3101681A1

    公开(公告)日：2016-12-07

    申请号：EP15743005.9

    申请日：2015-01-21

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： TAGAMI, Shohei ,  SUGO, Michihiro

    IPC分类号： H01L21/02 ,  B32B7/06 ,  B32B27/00 ,  C09J183/04 ,  H01L21/304

    CPC分类号： C09J183/04 ,  B32B27/283 ,  C08G77/04 ,  C08G77/12 ,  C08G77/50 ,  C08L83/04 ,  C09J183/10 ,  C09J183/14 ,  C09J2203/326 ,  H01L21/02255 ,  H01L21/304 ,  H01L21/6835 ,  H01L2221/00 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386 ,  C08L83/00

    摘要： The present invention is directed to a wafer processing laminate including a support, a temporary adhesive material layer formed on the support, and a wafer, having a circuit-forming front surface and a back surface to be processed, laminated on the temporary adhesive material layer, in which the temporary adhesive material layer is composed of a complex temporary adhesive material layer having a three-layered structure that includes a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) releasably adhering to the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B) releasably laminated on the first temporary adhesive layer, and a third temporary adhesive layer composed of a thermosetting siloxane polymer layer (C) releasably laminated on the second temporary adhesive layer and releasably adhering to the support. The invention provides a temporary adhesive material for a wafer processing that facilitates temporary adhesion and separation, and allows easy separation even when a thin wafer is cut before separation, and a wafer processing laminate that can increase productivity of the thin wafers.

    摘要翻译： 本发明涉及一种晶片加工层压体，其包括支撑体，形成在支撑体上的临时粘合材料层，以及具有层压在临时粘合材料层上的电路形成前表面和待加工后表面的晶片 其中临时粘合材料层由具有三层结构的复合临时粘合材料层组成，其包括由可释放地粘附在晶片前表面的热塑性有机聚硅氧烷聚合物层（A）组成的第一临时粘结层， 由可剥离地层叠在第一临时粘合剂层上的热固性硅氧烷改性聚合物层（B）和由可释放地层压在第二临时粘合剂层上的热固性硅氧烷聚合物层（C）组成的第三临时粘合剂层构成的第二临时粘合剂层 并且可释放地粘附到支撑件上。 本发明提供了一种用于晶片处理的临时粘合材料，其便于临时粘合和分离，并且即使在分离之前切割薄晶片也容易分离，以及可以提高薄晶片的生产率的晶片处理层压体。

    WAFER PROCESSING LAMINATE, TEMPORARY ADHESIVE MATERIAL FOR WAFER PROCESSING, AND METHOD FOR MANUFACTURING THIN WAFER
    7.
    发明公开
    WAFER PROCESSING LAMINATE, TEMPORARY ADHESIVE MATERIAL FOR WAFER PROCESSING, AND METHOD FOR MANUFACTURING THIN WAFER 审中-公开
    晶圆加工层压板，临时键合材料晶圆加工和生产薄晶圆的方法

    公开(公告)号：EP3159924A1

    公开(公告)日：2017-04-26

    申请号：EP16002215.8

    申请日：2016-10-14

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： TAGAMI, Shohei ,  SUGO, Michihiro ,  YASUDA, Hiroyuki ,  TANABE, Masahito

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6836 ,  B32B7/06 ,  B32B7/12 ,  B32B27/283 ,  C08G77/04 ,  C08G77/06 ,  C09J5/06 ,  C09J7/22 ,  C09J7/35 ,  C09J183/04 ,  C09J2201/36 ,  C09J2203/326 ,  C09J2205/302 ,  H01L21/304 ,  H01L21/6835 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13147 ,  H01L2924/01029

    摘要： The present invention is a wafer processing laminate including a support (3), a temporary adhesive material layer (2) formed on the support, and a wafer (1) stacked on the temporary adhesive material layer, the wafer having a front surface on which a circuit is formed and a back surface to be processed, wherein the temporary adhesive material layer comprises a three-layered complex temporary adhesive material layer that includes a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a thickness of less than 100 nm and releasably laminated to the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B) releasably laminated to the first temporary adhesive layer, and a third temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A') having a thickness of less than 100 nm, releasably laminated to the second temporary adhesive layer, and releasably laminated to the support. This wafer processing laminate can withstand a thermal process at a high temperature exceeding 300°C, and can increase productivity of thin wafers.

    摘要翻译： 本发明是一个晶片处理层压材料包括：（3），一个临时粘合材料层（2）在载体上形成的支撑件，和一个晶片（1）堆叠在临时粘结材料层上，具有在其上的前表面的晶片 的电路形成，并且待处理的背表面，worin临时粘合剂材料层包括三层复合临时粘接材料层做包括具有厚度的更小的热塑性的有机聚硅氧烷聚合物层（A）构成的第一临时粘合剂层 大于100nm和自由剥离地层积到热塑性构成的晶片，剥离地层积于所述第一临时粘合剂层的热固性硅氧烷改性的聚合物层（B）构成的第二临时粘合剂层，以及第三临时粘合剂层的前表面 有机聚硅氧烷聚合物层（A“）的厚度为小于100纳米，自由剥离地层积于第二临时粘合剂层，和RELE asably层压到载体上。 此晶片处理层压板可在高温下超过300℃经受热过程，并能增加薄晶片的生产率。