公开(公告)号：EP2849213A4

公开(公告)日：2015-11-18

申请号：EP12876275

申请日：2012-05-08

申请人： SHINDENGEN ELECTRIC MFG

发明人： MUYARI KOYA ,  ITO KOJI ,  OGASAWARA ATSUSHI ,  ITO KAZUHIKO

IPC分类号： H01L21/316 ,  C03C3/093 ,  H01L21/02 ,  H01L23/31 ,  H01L29/861 ,  H01L29/868

CPC分类号： H01L23/291 ,  C03C3/093 ,  C03C8/04 ,  C03C8/24 ,  C03C2207/00 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02345 ,  H01L21/56 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/76232 ,  H01L23/3171 ,  H01L23/3185 ,  H01L29/66136 ,  H01L29/8611 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a glass composition for protecting a semiconductor junction which contains at least SiO 2 , B 2 O 3 , Al 2 O 3 , ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50°C to 550°C falls within a range of 3.33×10 -6 to 4.13×10 -6 . A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where "a glass material containing lead silicate as a main component" is used.

公开(公告)号：EP2811511A4

公开(公告)日：2015-11-18

申请号：EP12837604

申请日：2012-01-31

申请人： SHINDENGEN ELECTRIC MFG

发明人： MUYARI KOYA ,  ITO KOJI ,  OGASAWARA ATSUSHI ,  ITO KAZUHIKO

IPC分类号： H01L21/316 ,  C03C3/066 ,  C03C3/093 ,  H01L21/329 ,  H01L23/29 ,  H01L23/31 ,  H01L29/06 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872

CPC分类号： H01L23/564 ,  C03C3/04 ,  C03C3/066 ,  C03C3/093 ,  H01L21/02112 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02282 ,  H01L21/30604 ,  H01L23/291 ,  H01L23/3178 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/66136 ,  H01L29/861 ,  H01L2224/06181

摘要： A glass composition for protecting a semiconductor junction is provided, wherein the glass composition for protecting a semiconductor junction contains at least SiO 2 , B 2 O 3 , Al 2 O 3 , ZnO, and at least two oxides of alkaline earth metal selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, P, As, Sb, Li, Na and K. According to the glass composition for protecting a semiconductor junction of the present invention, in the same manner as a conventional case where "a glass material containing lead silicate as a main component" is used, a semiconductor device having a high breakdown voltage can be manufactured by using a glass material containing no lead. Further, according to the glass composition for protecting a semiconductor junction, the glass composition for protecting a semiconductor junction contains at least two oxides of alkaline earth metal selected from a group consisting of CaO, MgO and BaO and hence, an average linear expansion coefficient of the glass composition at a temperature range of 50°C to 550°C becomes close to a linear expansion coefficient of silicon at a temperature range of 50°C to 550°C whereby a semiconductor device of high reliability can be manufactured.

公开(公告)号：EP2858098A4

公开(公告)日：2016-01-27

申请号：EP12876406

申请日：2012-05-08

申请人： SHINDENGEN ELECTRIC MFG

发明人： OGASAWARA ATSUSHI ,  ITO KOJI ,  ITO KAZUHIKO ,  MUYARI KOYA

IPC分类号： H01L21/316 ,  C03C3/064 ,  C03C3/085 ,  C03C3/087 ,  C03C3/093 ,  H01L23/29 ,  H01L23/31 ,  H01L29/861 ,  H01L29/868

CPC分类号： H01L23/564 ,  C03C3/085 ,  C03C3/087 ,  C03C3/093 ,  C03C8/02 ,  C03C8/04 ,  C03C8/24 ,  C03C2207/00 ,  H01L21/02112 ,  H01L21/02161 ,  H01L21/02318 ,  H01L21/56 ,  H01L23/291 ,  H01L23/3107 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/4952 ,  H01L23/49551 ,  H01L24/73 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/66136 ,  H01L29/861 ,  H01L29/8613 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A resin-sealed semiconductor device 10 of the present invention includes : a mesa-type semiconductor element 100 which includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin 40 which seals the mesa-type semiconductor element 100, wherein the mesa-type semiconductor element 100 includes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device.

公开(公告)号：EP2717299A4

公开(公告)日：2015-04-08

申请号：EP11857966

申请日：2011-05-26

申请人： SHINDENGEN ELECTRIC MFG

发明人： OGASAWARA ATSUSHI ,  ITO KAZUHIKO ,  ITO KOJI

IPC分类号： H01L23/29 ,  C03C3/066 ,  C03C3/093 ,  C03C8/04 ,  C03C8/24 ,  H01L23/31

CPC分类号： H01L21/022 ,  C03C3/066 ,  C03C3/093 ,  C03C8/04 ,  C03C8/24 ,  H01L21/02123 ,  H01L21/02172 ,  H01L21/02318 ,  H01L21/76232 ,  H01L23/291 ,  H01L23/3178 ,  H01L23/564 ,  H01L29/0661 ,  H01L29/8611 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a glass composition for protecting a semiconductor junction which contains at least SiO 2 , Al 2 O 3 , ZnO, CaO and 3 mol% to 10 mol% of B 2 O 3 , and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiO 2 falls within a range of 32 mol% to 48 mol%, a content of Al 2 O 3 falls within a range of 9 mol% to 13 mol%, a content of ZnO falls within a range of 18 mol% to 28 mol%, a content of CaO falls within a range of 15 mol% to 23 mol%, and a content of B 2 O 3 falls within a range of 3 mol% to 10 mol%. According to the glass composition for protecting a semiconductor junction of the present invention, a semiconductor device having a high withstand voltage can be manufactured by using a glass material which contains no lead in the same manner as a conventional case where "a glass material containing lead silicate as a main component" is used.